UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

Design and implementation of bound-to-quasibound GaN/AlGaN photovoltaic quantum well infrared photodetectors operating in the short wavelength infrared range at room temperature

Journal of applied physics, 2019-05, Vol.125 (17)

2019

Volltextzugriff (PDF)

Toward Monolithic GaN on Si Inter-Sub-Band Infrared Optoelectronics

IEEE transactions on electron devices, 2024-04, Vol.71 (4), p.2497-2502

2024

Volltextzugriff (PDF)

Electronic bound states in the continuum above (Ga,In)(As,N)/(Al,Ga)As quantum wells

Physical review. B, Condensed matter and materials physics, 2012-03, Vol.85 (11), Article 115307

2012

Volltextzugriff (PDF)

Mid-Infrared GaN/AlGaN Quantum Cascade Detector Grown on Silicon

IEEE electron device letters, 2019-02, Vol.40 (2), p.263-266

2019

Volltextzugriff (PDF)

Improved hole confinement in GaInAsN-GaAsSbN thin double-layer quantum-well structure for telecom-wavelength lasers

Journal of applied physics, 2010-11, Vol.108 (9), p.093116-093116-6

2010

Volltextzugriff (PDF)

Comparison of Simulation and Measurement of Gate Leakage Current in Metal/Al2O3/GaN/AlGaN/AlN/GaN Capacitors

IEEE transactions on electron devices, 2014-10, Vol.61 (10), p.3558-3561

2014

Volltextzugriff (PDF)

Study of Single Silicon Quantum Dots’ Band Gap and Single-Electron Charging Energies by Room Temperature Scanning Tunneling Microscopy

Nano letters, 2008-06, Vol.8 (6), p.1689-1694

2008

Volltextzugriff (PDF)

The opportunity of using InGaAsN/AlGaAs quantum wells for extended short-wavelength infrared photodetection

Infrared physics & technology, 2019-01, Vol.96, p.68-76

2019

Volltextzugriff (PDF)

Vertical currents due to interatomic Coulombic decay in experiments with two coupled quantum wells

Physical review. B, 2016-01, Vol.93 (4), Article 045310

2016

Volltextzugriff (PDF)

Photocurrent spectroscopy of intersubband transitions in GaInAsN/(Al)GaAs asymmetric quantum well infrared photodetectors

Journal of applied physics, 2012-10, Vol.112 (8)

2012

Volltextzugriff (PDF)

First demonstration of plasmonic GaN quantum cascade detectors with enhanced efficiency at normal incidence

Optics express, 2014-08, Vol.22 (17), p.21069-21078

2014

Volltextzugriff (PDF)

Utilizing the interface adsorption of nitrogen for the growth of high-quality GaInAsN/GaAs quantum wells by metal organic chemical vapor deposition for near infrared applications

Applied physics letters, 2010-04, Vol.96 (14), p.141102-141102-3

2010

Volltextzugriff (PDF)

A model for the trap-assisted tunneling mechanism in diffused n-p and implanted n(+)-p HgCdTe photodiodes

IEEE transactions on electron devices, 1992-07, Vol.39 (7, Ju), p.1638-1645

1992

Volltextzugriff (PDF)

Comparison of Simulation and Measurement of Gate Leakage Current in Metal/Al sub(2)O sub(3)/GaN/AlGaN /AlN/GaN Capacitors

IEEE transactions on electron devices, 2014-10, Vol.61 (10), p.3558-3561

2014

Volltextzugriff (PDF)

Measuring the refractive index around intersubband transition resonance in GaN/AlN multi quantum wells

Optics express, 2013-02, Vol.21 (3), p.3800-3808

2013

Volltextzugriff (PDF)

Polarization-independent intersubband based GaInAsN quantum-well photodetector with dominant detection at 1.42 μ m

Applied physics letters, 2009-03, Vol.94 (9), p.093503-093503-3

2009

Volltextzugriff (PDF)

GaN/AlGaN Photovoltaic Quantum Well Infrared Photodetector at 2.3 μm

2018 IEEE Photonics Society Summer Topical Meeting Series (SUM), 2018, p.229-230

2018

Volltextzugriff (PDF)

Strain-induced nitrogen incorporation in atomic layer epitaxy growth of InAsN/GaAs quantum wells using metal organic chemical vapor deposition

Applied physics letters, 2009-08, Vol.95 (5)

2009

Volltextzugriff (PDF)

Metamaterials and Metallic Hole Arrays Coupled to Short Wave Infrared Intersubband Transitions in the GaN/AIN Based Quantum Cascade Structures

2018 Conference on Lasers and Electro-Optics Pacific Rim (CLEO-PR), 2018, p.1-2

Bahir, Gad

2018

Volltextzugriff (PDF)

Strain-induced nitrogen incorporation in atomic layer epitaxy growthof InAsN/GaAs quantum wells using metal organic chemical vapor deposition

Applied physics letters, 2009-08, Vol.95 (5), p.051102-051102-3

2009

Volltextzugriff (PDF)

Interatomic Coulombic decay in two coupled quantum wells

Physical review. B, Condensed matter and materials physics, 2015-04, Vol.91 (16), Article 165312

2015

Volltextzugriff (PDF)

Characteristics of InxAl1-xN-GaN high-electron mobility field-effect transistor

IEEE transactions on electron devices, 2005-02, Vol.52 (2), p.146-150

2005

Volltextzugriff (PDF)

Unpolarized intersubband photocurrent in Te doped GaInAsN/GaAlAs quantum well IR photodetector

Physica status solidi. C, 2008-05, Vol.5 (6), p.2323-2325

2008

Volltextzugriff (PDF)

Plasmonic-polarization enhancement of novel GaN/AlN quantum cascade detector

CLEO: 2013, 2013, p.1-2

2013

Volltextzugriff (PDF)

GaN/AlN Quantum Wells and Quantum Dots for Unipolar Devices at Telecommunication Wavelengths

AIP conference proceedings, 2007, Vol.893 (1)

2007

Volltextzugriff (PDF)

1 – 25 von 31

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(23)
Mit Volltextzugriff
(26)

Publikationsform

Sprache

Englisch
(30)
Japanisch
(7)

Erscheinungsjahr

n.n

Thema

Science & Technology
(25)
Physical Sciences
(24)
Physics
(22)
Physics, Applied
(19)
Technology
(16)
Engineering
(10)
Engineering, Electrical & Electronic
(10)
Physics, Condensed Matter
(7)
Quantum Wells
(7)
Materials Science
(6)
Optics
(6)
Photodetectors
(6)
Detectors
(5)
Electronics
(5)
Exact Sciences And Technology
(5)
Aluminum Gallium Nitrides
(4)
Gallium Nitride
(4)
Gallium Nitrides
(4)
Materials Science, Multidisciplinary
(4)
Applied Sciences
(3)

15 weitere anzeigen...

Weniger anzeigen...

Menü

Weitere Dienste

Einstellungen

Design and implementation of bound-to-quasibound GaN/AlGaN photovoltaic quantum well infrared photodetectors operating in the short wavelength infrared range at room temperature

Toward Monolithic GaN on Si Inter-Sub-Band Infrared Optoelectronics

Electronic bound states in the continuum above (Ga,In)(As,N)/(Al,Ga)As quantum wells

Mid-Infrared GaN/AlGaN Quantum Cascade Detector Grown on Silicon

Improved hole confinement in GaInAsN-GaAsSbN thin double-layer quantum-well structure for telecom-wavelength lasers

Comparison of Simulation and Measurement of Gate Leakage Current in Metal/Al2O3/GaN/AlGaN/AlN/GaN Capacitors

Study of Single Silicon Quantum Dots’ Band Gap and Single-Electron Charging Energies by Room Temperature Scanning Tunneling Microscopy

The opportunity of using InGaAsN/AlGaAs quantum wells for extended short-wavelength infrared photodetection

Vertical currents due to interatomic Coulombic decay in experiments with two coupled quantum wells

Photocurrent spectroscopy of intersubband transitions in GaInAsN/(Al)GaAs asymmetric quantum well infrared photodetectors

First demonstration of plasmonic GaN quantum cascade detectors with enhanced efficiency at normal incidence

Utilizing the interface adsorption of nitrogen for the growth of high-quality GaInAsN/GaAs quantum wells by metal organic chemical vapor deposition for near infrared applications

A model for the trap-assisted tunneling mechanism in diffused n-p and implanted n(+)-p HgCdTe photodiodes

Comparison of Simulation and Measurement of Gate Leakage Current in Metal/Al sub(2)O sub(3)/GaN/AlGaN /AlN/GaN Capacitors

Measuring the refractive index around intersubband transition resonance in GaN/AlN multi quantum wells

Polarization-independent intersubband based GaInAsN quantum-well photodetector with dominant detection at 1.42 μ m

GaN/AlGaN Photovoltaic Quantum Well Infrared Photodetector at 2.3 μm

Strain-induced nitrogen incorporation in atomic layer epitaxy growth of InAsN/GaAs quantum wells using metal organic chemical vapor deposition

Metamaterials and Metallic Hole Arrays Coupled to Short Wave Infrared Intersubband Transitions in the GaN/AIN Based Quantum Cascade Structures

Strain-induced nitrogen incorporation in atomic layer epitaxy growthof InAsN/GaAs quantum wells using metal organic chemical vapor deposition

Interatomic Coulombic decay in two coupled quantum wells

Characteristics of InxAl1-xN-GaN high-electron mobility field-effect transistor

Unpolarized intersubband photocurrent in Te doped GaInAsN/GaAlAs quantum well IR photodetector

Plasmonic-polarization enhancement of novel GaN/AlN quantum cascade detector

GaN/AlN Quantum Wells and Quantum Dots for Unipolar Devices at Telecommunication Wavelengths

Suchergebnisse filtern