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Gate Reliability Investigation in Normally-Off p-Type-GaN Cap/AlGaN/GaN HEMTs Under Forward Bias Stress

IEEE electron device letters, 2016-04, Vol.37 (4), p.385-388

2016

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Investigation of gate-diode degradation in normally-off p-GaN/AlGaN/GaN high-electron-mobility transistors

Applied physics letters, 2015-11, Vol.107 (19)

2015

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Dispersion effects in on-state resistance of lateral Ga2O3 MOSFETs at 300 V switching

Electronics letters, 2020-08, Vol.56 (16), p.838-840

2020

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Vertical GaN MISFET for chip-on-chip high speed laser driving applications

Electronics letters, 2020-09, Vol.56 (20), p.1084-1086

2020

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Reliability issues of GaN based high voltage power devices

Microelectronics and reliability, 2011-09, Vol.51 (9-11), p.1710-1716

2011

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Optimization of Vertical GaN Drift Region Layers for Avalanche and Punch-Through pn-Diodes

IEEE electron device letters, 2023-03, Vol.44 (3), p.1-1

2023

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1.17 GW/cm² AlN-Based GaN-Channel HEMTs on Mono-Crystalline AlN Substrate

IEEE electron device letters, 2024-06, Vol.45 (6), p.1048-1051

2024

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Fast-Switching GaN-Based Lateral Power Schottky Barrier Diodes With Low Onset Voltage and Strong Reverse Blocking

IEEE electron device letters, 2012-03, Vol.33 (3), p.357-359

2012

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Comparative study of AlGaN/GaN HEMTs robustness versus buffer design variations by applying Electroluminescence and electrical measurements

Microelectronics and reliability, 2011-02, Vol.51 (2), p.217-223

2011

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Normally-off GaN Transistors for Power Applications

Journal of physics. Conference series, 2014-04, Vol.494 (1), p.12001-6

2014

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Punchthrough-Voltage Enhancement of AlGaN/GaN HEMTs Using AlGaN Double-Heterojunction Confinement

IEEE transactions on electron devices, 2008-12, Vol.55 (12), p.3354-3359

2008

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Temperature dependent dynamic on-state resistance in GaN-on-Si based normally-off HFETs

Microelectronics and reliability, 2016-09, Vol.64, p.556-559

2016

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Off-state breakdown and dispersion optimization in AlGaN/GaN heterojunction field-effect transistors utilizing carbon doped buffer

Applied physics letters, 2012-05, Vol.100 (22), p.223502-223502-3

2012

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Influence of the device geometry on the Schottky gate characteristics of AlGaN/GaN HEMTs

Semiconductor science and technology, 2010-07, Vol.25 (7), p.075005-075005

2010

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Effect of barrier recess on transport and electrostatic interface properties of GaN-based normally-off and normally-on metal oxide semiconductor heterostructure field effect transistors

Solid-state electronics, 2016-11, Vol.125, p.118-124

2016

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AlGaN/GaN HEMT With Integrated Recessed Schottky-Drain Protection Diode

IEEE electron device letters, 2009-09, Vol.30 (9), p.901-903

2009

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Improving the Linearity of GaN HEMTs by Optimizing Epitaxial Structure

IEEE transactions on electron devices, 2009-03, Vol.56 (3), p.361-364

2009

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Effect of gate trench fabrication technology on reliability of AlGaN/GaN heterojunction field effect transistors

Microelectronics and reliability, 2014-09, Vol.54 (9-10), p.2191-2195

2014

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Single- and double-heterostructure GaN-HEMTs devices for power switching applications

Microelectronics and reliability, 2012-09, Vol.52 (9-10), p.2426-2430

2012

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Dispersion effects in on‐state resistance of lateral Ga 2 O 3 MOSFETs at 300 V switching

Electronics letters, 2020-08, Vol.56 (16), p.838-840

2020

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Isolation properties and failure mechanisms of vertical Pt / n-GaN SBDs

Microelectronics and reliability, 2022-11, Vol.138, p.114644, Article 114644

2022

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On the fringing-field effect in liquid-crystal beam-steering devices

Applied Optics, 2004-01, Vol.43 (1), p.11

2004

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Vertical GaN n-channel MISFETs on ammonothermal GaN substrate: Temperature dependent dynamic switching characteristics

Materials science in semiconductor processing, 2019-03, Vol.91, p.146-150

2019

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Normally-off high-voltage p-GaN gate GaN HFET with carbon-doped buffer

2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs, 2011, p.239-242

2011

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Normally-off AlGaN/GaN HFET with p-type GaN Gate and AlGaN buffer

2010 22nd International Symposium on Power Semiconductor Devices & IC's (ISPSD), 2010, p.347-350

2010

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Gate Reliability Investigation in Normally-Off p-Type-GaN Cap/AlGaN/GaN HEMTs Under Forward Bias Stress

Investigation of gate-diode degradation in normally-off p-GaN/AlGaN/GaN high-electron-mobility transistors

Dispersion effects in on-state resistance of lateral Ga2O3 MOSFETs at 300 V switching

Vertical GaN MISFET for chip-on-chip high speed laser driving applications

Reliability issues of GaN based high voltage power devices

Optimization of Vertical GaN Drift Region Layers for Avalanche and Punch-Through pn-Diodes

1.17 GW/cm² AlN-Based GaN-Channel HEMTs on Mono-Crystalline AlN Substrate

Fast-Switching GaN-Based Lateral Power Schottky Barrier Diodes With Low Onset Voltage and Strong Reverse Blocking

Comparative study of AlGaN/GaN HEMTs robustness versus buffer design variations by applying Electroluminescence and electrical measurements

Normally-off GaN Transistors for Power Applications

Punchthrough-Voltage Enhancement of AlGaN/GaN HEMTs Using AlGaN Double-Heterojunction Confinement

Temperature dependent dynamic on-state resistance in GaN-on-Si based normally-off HFETs

Off-state breakdown and dispersion optimization in AlGaN/GaN heterojunction field-effect transistors utilizing carbon doped buffer

Influence of the device geometry on the Schottky gate characteristics of AlGaN/GaN HEMTs

Effect of barrier recess on transport and electrostatic interface properties of GaN-based normally-off and normally-on metal oxide semiconductor heterostructure field effect transistors

AlGaN/GaN HEMT With Integrated Recessed Schottky-Drain Protection Diode

Improving the Linearity of GaN HEMTs by Optimizing Epitaxial Structure

Effect of gate trench fabrication technology on reliability of AlGaN/GaN heterojunction field effect transistors

Single- and double-heterostructure GaN-HEMTs devices for power switching applications

Dispersion effects in on‐state resistance of lateral Ga 2 O 3 MOSFETs at 300 V switching

Isolation properties and failure mechanisms of vertical Pt / n-GaN SBDs

On the fringing-field effect in liquid-crystal beam-steering devices

Vertical GaN n-channel MISFETs on ammonothermal GaN substrate: Temperature dependent dynamic switching characteristics

Normally-off high-voltage p-GaN gate GaN HFET with carbon-doped buffer

Normally-off AlGaN/GaN HFET with p-type GaN Gate and AlGaN buffer

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