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Tailoring of structural and optical properties of electrosprayed β-Ga2O3 nanostructures via self-assembly

Optical and quantum electronics, 2023-05, Vol.55 (5), Article 437

2023

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Impact of annealing temperature on band-alignment of PLD grown Ga2O3/Si (100) heterointerface

Journal of alloys and compounds, 2020-04, Vol.819, p.153052, Article 153052

2020

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Suppression of interfacial oxygen vacancies for efficient charge extraction at CZTS/TiO2 heterojunction

Applied physics letters, 2021-01, Vol.118 (4)

2021

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Evaluation of diode characteristics for fully vertical β-Ga2O3 on silicon (100) substrate

Journal of materials science. Materials in electronics, 2020-08, Vol.31 (16), p.13845-13856

2020

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A new strategy of defect passivation in kesterite absorber layer to engineer the band tailing for efficient carrier transport

Applied physics. A, Materials science & processing, 2022-12, Vol.128 (12), Article 1107

2022

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NO2 gas sensing performance of Ag−WO3−x thin films prepared by reactive magnetron sputtering process

Applied physics. A, Materials science & processing, 2023-12, Vol.129 (12), Article 866

2023

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Evolution of lateral V-defects on InGaN/GaN on Si(111) during PAMBE: the role of strain on defect kinetics

CrystEngComm, 2018, Vol.2 (29), p.4151-4163

2018

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Probing InGaN immiscibility at AlGaN/InGaN heterointerface on silicon (111) through two-step capacitance-voltage and conductance-voltage profiles

Materials & design, 2017-11, Vol.133, p.176-185

2017

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High-resolution X-ray diffraction analysis of AlxGa1−xN/InxGa1−xN/GaN on sapphire multilayer structures: Theoretical, simulations, and experimental observations

Journal of applied physics, 2014-05, Vol.115 (17)

2014

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Ultra-high responsivity (>12.34 kA W−1) of Ga-In bimetallic oxide nanowires based deep-UV photodetector

Nanotechnology, 2020-07, Vol.31 (30), p.304001-304001

2020

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High Responsivity of Quasi-2D Electrospun \beta -Ga2O3-Based Deep-UV Photodetectors

IEEE photonics technology letters, 2019-04, Vol.31 (8), p.619-622

2019

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Effects of threading dislocations on drain current dispersion and slow transients in unpassivated AlGaN/GaN/Si heterostructure field-effect transistors

Applied physics letters, 2014-08, Vol.105 (7)

2014

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Erratum: “High-resolution X-ray diffraction analysis of AlxGa1−xN/InxGa1−xN/GaN on sapphire multilayer structures: Theoretical, simulations, and experimental observations” [J. Appl. Phys. 115 , 174507 (2014)]

Journal of applied physics, 2015-01, Vol.117 (4)

2015

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Investigation of cross-hatch surface and study of anisotropic relaxation and dislocation on InGaAs on GaAs (001)

Electronic Materials Letters, 2016, 12(3), , pp.356-364

2016

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High Responsivity of Quasi-2D Electrospun $\beta$ -Ga 2 O 3 -Based Deep-UV Photodetectors

IEEE photonics technology letters, 2019-04, Vol.31 (8), p.619-622

2019

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Comprehensive strain and band gap analysis of PA-MBE grown AlGaN/GaN heterostructures on sapphire with ultra thin buffer

AIP advances, 2014-11, Vol.4 (11), p.117120-117120-10

2014

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High Responsivity of Quasi-2D Electrospun [Formula Omitted]-Ga2O3-Based Deep-UV Photodetectors

IEEE photonics technology letters, 2019-01, Vol.31 (8), p.619

2019

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Optimizing charge transport and band-offset in silicon heterojunction solar cells: impact of TiO 2 contact deposition temperature

Journal of physics. D, Applied physics, 2024-11, Vol.57 (44), p.445103

2024

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Optimizing charge transport and band-offset in silicon heterojunction solar cells: impact of TiO2 contact deposition temperature

Journal of physics. D, Applied physics, 2024-11, Vol.57 (44)

2024

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Comparative DC Characteristic Analysis of AlGaN/GaN HEMTs Grown on Si(111) and Sapphire Substrates by MBE

Journal of electronic materials, 2014-04, Vol.43 (4), p.1263-1270

2014

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Design and Analysis of P-GaN/N-Ga₂O₃ Based Junction Barrier Schottky Diodes

IEEE transactions on electron devices, 2021-12, Vol.68 (12), p.6052-6058

2021

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Transition from thin film to nanostructure in low pressure chemical vapor deposition growth of β-Ga2O3: Impact of metal gallium source

Thin solid films, 2020-09, Vol.709, p.138234, Article 138234

2020

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6 kA/W) and Dark Current

IEEE transactions on electron devices, 2021-01, Vol.68 (1), p.144

2021

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Exceptional Responsivity (>6 kA/W) and Dark Current (2O3/p-CuO Quasi-Heterojunction-Based Deep UV Photodetector

IEEE transactions on electron devices, 2021-01, Vol.68 (1), p.144-151

2021

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Exceptional Responsivity (>6 kA/W) and Dark Current (<70 fA) Tradeoff of n-Ga 2 O 3 /p-CuO Quasi-Heterojunction-Based Deep UV Photodetector

IEEE transactions on electron devices, 2021-01, Vol.68 (1), p.144-151

2021

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Tailoring of structural and optical properties of electrosprayed β-Ga2O3 nanostructures via self-assembly

Impact of annealing temperature on band-alignment of PLD grown Ga2O3/Si (100) heterointerface

Suppression of interfacial oxygen vacancies for efficient charge extraction at CZTS/TiO2 heterojunction

Evaluation of diode characteristics for fully vertical β-Ga2O3 on silicon (100) substrate

A new strategy of defect passivation in kesterite absorber layer to engineer the band tailing for efficient carrier transport

NO2 gas sensing performance of Ag−WO3−x thin films prepared by reactive magnetron sputtering process

Evolution of lateral V-defects on InGaN/GaN on Si(111) during PAMBE: the role of strain on defect kinetics

Probing InGaN immiscibility at AlGaN/InGaN heterointerface on silicon (111) through two-step capacitance-voltage and conductance-voltage profiles

High-resolution X-ray diffraction analysis of AlxGa1−xN/InxGa1−xN/GaN on sapphire multilayer structures: Theoretical, simulations, and experimental observations

Ultra-high responsivity (>12.34 kA W−1) of Ga-In bimetallic oxide nanowires based deep-UV photodetector

High Responsivity of Quasi-2D Electrospun \beta -Ga2O3-Based Deep-UV Photodetectors

Effects of threading dislocations on drain current dispersion and slow transients in unpassivated AlGaN/GaN/Si heterostructure field-effect transistors

Erratum: “High-resolution X-ray diffraction analysis of AlxGa1−xN/InxGa1−xN/GaN on sapphire multilayer structures: Theoretical, simulations, and experimental observations” [J. Appl. Phys. 115 , 174507 (2014)]

Investigation of cross-hatch surface and study of anisotropic relaxation and dislocation on InGaAs on GaAs (001)

High Responsivity of Quasi-2D Electrospun $\beta$ -Ga 2 O 3 -Based Deep-UV Photodetectors

Comprehensive strain and band gap analysis of PA-MBE grown AlGaN/GaN heterostructures on sapphire with ultra thin buffer

High Responsivity of Quasi-2D Electrospun [Formula Omitted]-Ga2O3-Based Deep-UV Photodetectors

Optimizing charge transport and band-offset in silicon heterojunction solar cells: impact of TiO 2 contact deposition temperature

Optimizing charge transport and band-offset in silicon heterojunction solar cells: impact of TiO2 contact deposition temperature

Comparative DC Characteristic Analysis of AlGaN/GaN HEMTs Grown on Si(111) and Sapphire Substrates by MBE

Design and Analysis of P-GaN/N-Ga₂O₃ Based Junction Barrier Schottky Diodes

Transition from thin film to nanostructure in low pressure chemical vapor deposition growth of β-Ga2O3: Impact of metal gallium source

6 kA/W) and Dark Current

Exceptional Responsivity (>6 kA/W) and Dark Current (2O3/p-CuO Quasi-Heterojunction-Based Deep UV Photodetector

Exceptional Responsivity (>6 kA/W) and Dark Current (<70 fA) Tradeoff of n-Ga 2 O 3 /p-CuO Quasi-Heterojunction-Based Deep UV Photodetector

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