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Comparative study of sensitive volume and triggering criteria of SEB in 600 V planar and trench IGBTs

Microelectronics and reliability, 2011-09, Vol.51 (9-11), p.1990-1994

2011

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Self-Powered Adaptive Switched Architecture Storage

Journal of physics. Conference series, 2016-11, Vol.773 (1), p.12103

2016

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MOS-IGBT power devices for high-temperature operation in smart power SOI technology

Microelectronics and reliability, 2011-09, Vol.51 (9-11), p.1980-1984

2011

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Reliability of ESD protection devices designed in a 3D technology

Microelectronics and reliability, 2014-09, Vol.54 (9-10), p.2272-2277

2014

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Autonomous power supply for aeronautical health monitoring sensors

Journal of physics. Conference series, 2018-07, Vol.1052 (1), p.12031

2018

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Self-Powered energy harvester strain sensing device for structural health monitoring

Journal of physics. Conference series, 2016-11, Vol.773 (1), p.12070

2016

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On-chip measurement to analyze failure mechanisms of ICs under system level ESD stress

Microelectronics and reliability, 2013-09, Vol.53 (9-11), p.1278-1283

2013

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Building-up of system level ESD modeling: Impact of a decoupling capacitance on ESD propagation

Microelectronics and reliability, 2013-02, Vol.53 (2), p.221-228

2013

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Powering a Commercial Datalogger by Energy Harvesting from Generated Aeroacoustic Noise

Journal of physics. Conference series, 2014-01, Vol.557 (1), p.12025-5

2014

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Under Voltage Lock-Out Design Rules for Proper Start-Up of Energy Autonomous Systems Powered by Supercapacitors

Journal of physics. Conference series, 2013-12, Vol.476 (1), p.12121-5

2013

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SEB Characterization of Commercial Power MOSFETs With Backside Laser and Heavy Ions of Different Ranges

IEEE transactions on nuclear science, 2008-08, Vol.55 (4), p.2166-2173

2008

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IEEE_Xplore

Electrostatic discharge failure analysis of capacitive RF MEMS switches

Microelectronics and reliability, 2007-09, Vol.47 (9), p.1818-1822

2007

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ESD failure signature in capacitive RF MEMS switches

Microelectronics and reliability, 2008-08, Vol.48 (8), p.1237-1240

2008

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Evaluation of the ESD performance of local protections based on SCR or bi-SCR with dynamic or static trigger circuit in 32 nm

Microelectronics and reliability, 2010-09, Vol.50 (9), p.1379-1382

2010

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Analytical description of the injection ratio of self-biased bipolar transistors under the very high injection conditions of ESD events

Solid-state electronics, 2008-05, Vol.52 (5), p.663-674

2008

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Failure mechanisms of discrete protection device subjected to repetitive electrostatic discharges (ESD)

Microelectronics and reliability, 2009-09, Vol.49 (9), p.1103-1106

2009

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Application of various optical techniques for ESD defect localization

Microelectronics and reliability, 2006-09, Vol.46 (9), p.1563-1568

2006

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Transient voltage overshoots of high voltage ESD protections based on bipolar transistors in smart power technology

2010 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2010, p.253-256

2010

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IEEE_Xplore

Latch-up ring design guidelines to improve electrostatic discharge (ESD) protection scheme efficiency

IEEE journal of solid-state circuits, 2004-10, Vol.39 (10), p.1778-1782

2004

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IEEE_Xplore

Prediction of LIN communication robustness against EFT events using dedicated failure models

Microelectronics and reliability, 2017-09, Vol.76-77, p.685-691

2017

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Analysis and compact modeling of a vertical grounded-base n-p-n bipolar transistor used as ESD protection in a smart power technology

IEEE journal of solid-state circuits, 2001-09, Vol.36 (9), p.1373-1381

2001

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IEEE_Xplore

20GHz on-chip measurement of ESD waveform for system level analysis

Microelectronics and reliability, 2015-11, Vol.55 (11), p.2276-2283

2015

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Impact of non-linear capacitances on transient waveforms during system level ESD stress

Microelectronics and reliability, 2016-09, Vol.64, p.88-92

2016

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Optimization of a MOS–IGBT–SCR ESD protection component in smart power SOI technology

Microelectronics and reliability, 2015-08, Vol.55 (9-10), p.1476-1480

2015

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Identification of the physical signatures of CDM induced latent defects into a DC–DC converter using low frequency noise measurements

Microelectronics and reliability, 2007-09, Vol.47 (9), p.1456-1461

2007

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Comparative study of sensitive volume and triggering criteria of SEB in 600 V planar and trench IGBTs

Self-Powered Adaptive Switched Architecture Storage

MOS-IGBT power devices for high-temperature operation in smart power SOI technology

Reliability of ESD protection devices designed in a 3D technology

Autonomous power supply for aeronautical health monitoring sensors

Self-Powered energy harvester strain sensing device for structural health monitoring

On-chip measurement to analyze failure mechanisms of ICs under system level ESD stress

Building-up of system level ESD modeling: Impact of a decoupling capacitance on ESD propagation

Powering a Commercial Datalogger by Energy Harvesting from Generated Aeroacoustic Noise

Under Voltage Lock-Out Design Rules for Proper Start-Up of Energy Autonomous Systems Powered by Supercapacitors

SEB Characterization of Commercial Power MOSFETs With Backside Laser and Heavy Ions of Different Ranges

Electrostatic discharge failure analysis of capacitive RF MEMS switches

ESD failure signature in capacitive RF MEMS switches

Evaluation of the ESD performance of local protections based on SCR or bi-SCR with dynamic or static trigger circuit in 32 nm

Analytical description of the injection ratio of self-biased bipolar transistors under the very high injection conditions of ESD events

Failure mechanisms of discrete protection device subjected to repetitive electrostatic discharges (ESD)

Application of various optical techniques for ESD defect localization

Transient voltage overshoots of high voltage ESD protections based on bipolar transistors in smart power technology

Latch-up ring design guidelines to improve electrostatic discharge (ESD) protection scheme efficiency

Prediction of LIN communication robustness against EFT events using dedicated failure models

Analysis and compact modeling of a vertical grounded-base n-p-n bipolar transistor used as ESD protection in a smart power technology

20GHz on-chip measurement of ESD waveform for system level analysis

Impact of non-linear capacitances on transient waveforms during system level ESD stress

Optimization of a MOS–IGBT–SCR ESD protection component in smart power SOI technology

Identification of the physical signatures of CDM induced latent defects into a DC–DC converter using low frequency noise measurements

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