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Optical constants and band gap of wurtzite Al1−xScxN/Al2O3 prepared by magnetron sputter epitaxy for scandium concentrations up to x = 0.41

Journal of applied physics, 2019-07, Vol.126 (4)

2019

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Influence of growth temperature on the properties of aluminum nitride thin films prepared by magnetron sputter epitaxy

Journal of applied physics, 2023-11, Vol.134 (18)

2023

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Near-field dynamics of broad area diode laser at very high pump levels

AIP advances, 2011-12, Vol.1 (4), p.042148-042148-6

2011

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Investigation of Leakage Current of AlGaN/GaN HEMTs Under Pinch-Off Condition by Electroluminescence Microscopy

Journal of electronic materials, 2010-06, Vol.39 (6), p.756-760

2010

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Transport characteristics of indium nitride (InN) films grown by plasma assisted molecular beam epitaxy (PAMBE)

Physica status solidi. C, 2009-06, Vol.6 (6), p.1480-1483

2009

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Characterization of Al2O3/GaAs interfaces and thin films prepared by atomic layer deposition

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2013-07, Vol.31 (4)

2013

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Failure Analysis of 100 nm AlGaN/GaN HEMTs Stressed under On- and Off-State Stress

2020 IEEE International Reliability Physics Symposium (IRPS), 2020, p.1-6

2020

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Voltage- and Temperature-Dependent Degradation of AIN/GaN High Electron Mobility Transistors

2018 International Integrated Reliability Workshop (IIRW), 2018, p.1-6

2018

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Static and dynamic characterization of AlN and nanocrystalline diamond membranes

Physica status solidi. A, Applications and materials science, 2012-10, Vol.209 (10), p.1835-1842

2012

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Microscopic Degradation Analysis of RF-Stressed AlGaN/GaN HEMTs

Materials science forum, 2012, Vol.725, p.79-82

2012

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Spatial variations of carrier and defect concentration in VGF GaAs:Si

Journal of materials science. Materials in electronics, 2008-12, Vol.19 (Suppl 1), p.165-170

2008

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Transport characteristics of indium nitride (InN) films grown by plasma assisted molecular beam epitaxy (PAMBE)

Physica status solidi. C, 2009-06, Vol.6 (6), p.n/a

2009

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Investigation of Leakage Current of AIGaN/GaN HEMTs Under Pinch-Off Condition by Electroluminescence Microscopy

Journal of electronic materials, 2010, Vol.39 (6), p.756-760

2010

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Photoluminescence topography of sulfur doped 2" InP grown by the vertical gradient freeze technique

Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307), 2002, p.405-408

2002

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Chemoradiation Increases PD-L1 Expression in Certain Melanoma and Glioblastoma Cells

Frontiers in immunology, 2016-12, Vol.7, p.610-610

2016

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Monitoring co-cultures of Clostridium carboxidivorans and Clostridium kluyveri by fluorescence in situ hybridization with specific 23S rRNA oligonucleotide probes

Systematic and applied microbiology, 2021-11, Vol.44 (6), p.126271-126271, Article 126271

2021

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Inter-Correlation among the Hydrophilic–Lipophilic Balance, Surfactant System, Viscosity, Particle Size, and Stability of Candelilla Wax-Based Dispersions

Coatings (Basel), 2018-12, Vol.8 (12), p.469

2018

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Continuous Production of Ethanol, 1-Butanol and 1-Hexanol from CO with a Synthetic Co-Culture of Clostridia Applying a Cascade of Stirred-Tank Bioreactors

Microorganisms (Basel), 2023-04, Vol.11 (4), p.1003

2023

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Optical constants and band gap of wurtzite Al1−xScxN/Al2O3 prepared by magnetron sputter epitaxy for scandium concentrations up to x = 0.41

Influence of growth temperature on the properties of aluminum nitride thin films prepared by magnetron sputter epitaxy

Near-field dynamics of broad area diode laser at very high pump levels

Investigation of Leakage Current of AlGaN/GaN HEMTs Under Pinch-Off Condition by Electroluminescence Microscopy

Transport characteristics of indium nitride (InN) films grown by plasma assisted molecular beam epitaxy (PAMBE)

Characterization of Al2O3/GaAs interfaces and thin films prepared by atomic layer deposition

Failure Analysis of 100 nm AlGaN/GaN HEMTs Stressed under On- and Off-State Stress

Voltage- and Temperature-Dependent Degradation of AIN/GaN High Electron Mobility Transistors

Static and dynamic characterization of AlN and nanocrystalline diamond membranes

Microscopic Degradation Analysis of RF-Stressed AlGaN/GaN HEMTs

Spatial variations of carrier and defect concentration in VGF GaAs:Si

Transport characteristics of indium nitride (InN) films grown by plasma assisted molecular beam epitaxy (PAMBE)

Investigation of Leakage Current of AIGaN/GaN HEMTs Under Pinch-Off Condition by Electroluminescence Microscopy

Photoluminescence topography of sulfur doped 2" InP grown by the vertical gradient freeze technique

Chemoradiation Increases PD-L1 Expression in Certain Melanoma and Glioblastoma Cells

Monitoring co-cultures of Clostridium carboxidivorans and Clostridium kluyveri by fluorescence in situ hybridization with specific 23S rRNA oligonucleotide probes

Inter-Correlation among the Hydrophilic–Lipophilic Balance, Surfactant System, Viscosity, Particle Size, and Stability of Candelilla Wax-Based Dispersions

Continuous Production of Ethanol, 1-Butanol and 1-Hexanol from CO with a Synthetic Co-Culture of Clostridia Applying a Cascade of Stirred-Tank Bioreactors

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