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Polarization induced interface and electron sheet charges of pseudomorphic ScAlN/GaN, GaAlN/GaN, InAlN/GaN, and InAlN/InN heterostructures

Journal of applied physics, 2021-05, Vol.129 (20)

2021

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Radiative inter-valley transitions as a dominant emission mechanism in AlGaN/GaN high electron mobility transistors

Semiconductor science and technology, 2012-12, Vol.27 (12), p.125003

2012

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Reliability and Failure Analysis of 100 nm AlGaN/GaN HEMTs under DC and RF Stress

2021 IEEE International Reliability Physics Symposium (IRPS), 2021, p.1-7

2021

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Influence of surface states on the voltage robustness of AlGaN/GaN HFET power devices

Microelectronics and reliability, 2014-12, Vol.54 (12), p.2656-2661

2014

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Thermal and non-thermal saturation effects in the output characteristic of UV-to-violet emitting (AlGaIn)N LEDs

Physica status solidi. A, Applications and materials science, 2007-04, Vol.204 (4), p.1018-1024

2007

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Which non-clinical factors influence the use of innovative implants? The example of drug-releasing coronary stents in patients with acute myocardial infarction: a multilevel regression analysis

Gesundheitswesen (Bundesverband der Ärzte des Öffentlichen Gesundheitsdienstes (Germany)), 2013-12, Vol.75 (12), p.822

Bäumler, M

2013

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Densification of Thin Aluminum Oxide Films by Thermal Treatments

Materials sciences and applications, 2014, Vol.5 (8), p.628-638

2014

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Injection level dependent luminescence characteristics of UV-violet emitting (AlGaIn)N LED structures

Physica status solidi. A, Applications and materials science, 2007-01, Vol.204 (1), p.236-240

2007

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Comparison of reliability of 100 nm AlGaN/GaN HEMTs with T-gate and SAG-gate technology

Microelectronics and reliability, 2018-09, Vol.88-90, p.385-388

2018

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Reliability of 100 nm AlGaN/GaN HEMTs for mm-wave applications

Microelectronics and reliability, 2017-09, Vol.76-77, p.292-297

2017

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Nursing tasks left undone in German acute care hospitals - results from the international study RN4Cast

Gesundheitswesen (Bundesverband der Ärzte des Öffentlichen Gesundheitsdienstes (Germany)), 2014-11, Vol.76 (11), p.727

2014

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Relationship between strength qualities and short track speed skating performance in young athletes

Scandinavian journal of medicine & science in sports, 2016-02, Vol.26 (2), p.165-171

2016

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Nanoscopic measurements of surface recombination velocity and diffusion length in a semiconductor quantum well

Applied physics letters, 2002-07, Vol.81 (2), p.346-348

2002

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Accuracy of prenatal three‐dimensional ultrasound in the diagnosis of cleft hard palate when cleft lip is present

Ultrasound in obstetrics & gynecology, 2011-10, Vol.38 (4), p.440-444

2011

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Electronic structure of the neutral manganese acceptor in gallium arsenide

Physical review letters, 1987-07, Vol.59 (2), p.240-243

1987

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Reliability of 100nm AlGaN/GaN HEMTs for mm-wave applications

Microelectronics and reliability, 2017-09, Vol.76-77, p.292-297

2017

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Assessment of layer composition and thickness in AlGaN/GaN HEMT structures by spectroscopic ellipsometry

Physica status solidi. A, Applications and materials science, 2005-03, Vol.202 (4), p.665-670

2005

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Control over spinal nociception as quantified by the nociceptive flexor reflex (RIII reflex) can be achieved under feedback of the RIII reflex

European journal of pain, 2015-04, Vol.19 (4), p.480-489

2015

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Impact of GaN cap thickness on optical, electrical, and device properties in AlGaN/GaN high electron mobility transistor structures

Journal of applied physics, 2009-07, Vol.106 (2)

2009

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Degradation of 0.25μm GaN HEMTs under high temperature stress test

Microelectronics and reliability, 2015-08, Vol.55 (9-10), p.1667-1671

2015

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Vibrational mode and dielectric function spectra of BGaP probed by Raman scattering and spectroscopic ellipsometry

Journal of applied physics, 2011-03, Vol.109 (5), p.053504-053504-6

2011

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2K PL topography of silicon doped VGF GaAs wafers

Materials science & engineering. B, Solid-state materials for advanced technology, 2002-04, Vol.91, p.16-20

2002

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Generation of traps in AlGaN/GaN HEMTs during RF-and DC-stress test

2012 IEEE International Reliability Physics Symposium (IRPS), 2012, p.CD.6.1-CD.6.5

2012

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Facet degradation of high-power diode laser arrays

Applied physics. A, Materials science & processing, 2000-04, Vol.70 (4), p.377-381

2000

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Residual stress stability in fiber textured stoichiometric AlN film grown using rf magnetron sputtering

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2010-05, Vol.28 (3), p.394-399

2010

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Polarization induced interface and electron sheet charges of pseudomorphic ScAlN/GaN, GaAlN/GaN, InAlN/GaN, and InAlN/InN heterostructures

Radiative inter-valley transitions as a dominant emission mechanism in AlGaN/GaN high electron mobility transistors

Reliability and Failure Analysis of 100 nm AlGaN/GaN HEMTs under DC and RF Stress

Influence of surface states on the voltage robustness of AlGaN/GaN HFET power devices

Thermal and non-thermal saturation effects in the output characteristic of UV-to-violet emitting (AlGaIn)N LEDs

Which non-clinical factors influence the use of innovative implants? The example of drug-releasing coronary stents in patients with acute myocardial infarction: a multilevel regression analysis

Densification of Thin Aluminum Oxide Films by Thermal Treatments

Injection level dependent luminescence characteristics of UV-violet emitting (AlGaIn)N LED structures

Comparison of reliability of 100 nm AlGaN/GaN HEMTs with T-gate and SAG-gate technology

Reliability of 100 nm AlGaN/GaN HEMTs for mm-wave applications

Nursing tasks left undone in German acute care hospitals - results from the international study RN4Cast

Relationship between strength qualities and short track speed skating performance in young athletes

Nanoscopic measurements of surface recombination velocity and diffusion length in a semiconductor quantum well

Accuracy of prenatal three‐dimensional ultrasound in the diagnosis of cleft hard palate when cleft lip is present

Electronic structure of the neutral manganese acceptor in gallium arsenide

Reliability of 100nm AlGaN/GaN HEMTs for mm-wave applications

Assessment of layer composition and thickness in AlGaN/GaN HEMT structures by spectroscopic ellipsometry

Control over spinal nociception as quantified by the nociceptive flexor reflex (RIII reflex) can be achieved under feedback of the RIII reflex

Impact of GaN cap thickness on optical, electrical, and device properties in AlGaN/GaN high electron mobility transistor structures

Degradation of 0.25μm GaN HEMTs under high temperature stress test

Vibrational mode and dielectric function spectra of BGaP probed by Raman scattering and spectroscopic ellipsometry

2K PL topography of silicon doped VGF GaAs wafers

Generation of traps in AlGaN/GaN HEMTs during RF-and DC-stress test

Facet degradation of high-power diode laser arrays

Residual stress stability in fiber textured stoichiometric AlN film grown using rf magnetron sputtering

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