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Progress in the development of the display performance of AR, VR, QLED and OLED devices in recent years

Journal of Information Display, 2022, 23(1), , pp.1-17

2022

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Fluorinated CYTOP passivation effects on the electrical reliability of multilayer MoS2 field-effect transistors

Nanotechnology, 2015-11, Vol.26 (45), p.455201-455201

2015

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One-step solvothermal synthesis of carnation flower-like SnS2 as superior electrodes for supercapacitor applications

Applied surface science, 2017-12, Vol.425, p.923-931

2017

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A Bioinspired Stretchable Sensory‐Neuromorphic System

Advanced materials (Weinheim), 2021-11, Vol.33 (44), p.e2104690-n/a

2021

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Bright, Flexible, and Waterproof Top-Emitting InP Quantum Dot Light-Emitting Diodes on Al Foil

IEEE journal of selected topics in quantum electronics, 2024-05, Vol.30 (3: Flexible Optoelectronics), p.1-7

2024

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Optimum Design Configuration of Thin‐Film Transistors and Quantum‐Dot Light‐Emitting Diodes for Active‐Matrix Displays

Advanced materials (Weinheim), 2023-11, Vol.35 (48), p.e2304717-n/a

2023

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P‐158: Highly Flexible InP‐Based Quantum Dot Light‐Emitting Diodes Fabricated on Heat‐Dissipating Al‐Coated PEN Substrate

SID International Symposium Digest of technical papers, 2024-06, Vol.55 (1), p.1984-1986

2024

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Water-Soluble Thin Film Transistors and Circuits Based on Amorphous Indium–Gallium–Zinc Oxide

ACS applied materials & interfaces, 2015-04, Vol.7 (15), p.8268-8274

2015

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Progress in the Development of Active-Matrix Quantum-Dot Light-Emitting Diodes Driven by Non-Si Thin-Film Transistors

Materials, 2022-11, Vol.15 (23), p.8511

2022

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Threshold Voltage Control of Multilayered MoS2 Field‐Effect Transistors via Octadecyltrichlorosilane and their Applications to Active Matrixed Quantum Dot Displays Driven by Enhancement‐Mode Logic Gates

Small (Weinheim an der Bergstrasse, Germany), 2019-02, Vol.15 (7), p.e1803852-n/a

2019

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Low frequency noise characteristics in multilayer WSe2 field effect transistor

Applied physics letters, 2015-01, Vol.106 (2)

2015

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Photosensitive Full-Swing Multi-Layer MoS2 Inverters With Light Shielding Layers

IEEE electron device letters, 2017-01, Vol.38 (1), p.67-70

2017

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Advances in display technology: augmented reality, virtual reality, quantum dot-based light-emitting diodes, and organic light-emitting diodes

Journal of Information Display, 2024-07, Vol.25 (3), p.219-234

2024

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Scalable and selective N-type conversion for carbon nanotube transistors via patternable polyvinyl alcohol stacked with hydrophobic layers and their application to complementary logic circuits

Journal of materials research and technology, 2021-05, Vol.12, p.243-256

2021

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Spray-coated single walled carbon nanotubes as source and drain electrodes in SnO thin-film transistors

Semiconductor science and technology, 2018-07, Vol.33 (7), p.75013

2018

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Field‐Effect Transistors: Threshold Voltage Control of Multilayered MoS2 Field‐Effect Transistors via Octadecyltrichlorosilane and their Applications to Active Matrixed Quantum Dot Displays Driven by Enhancement‐Mode Logic Gates (Small 7/2019)

Small (Weinheim an der Bergstrasse, Germany), 2019-02, Vol.15 (7), p.n/a

2019

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High Performance of Quantum Dot Light-Emitting Diodes Using Enhanced Device Structure and Integration Method

Proceedings of the International Display Workshops, 2023-12, p.941

2023

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Memristive Switching Mechanism in Colloidal InP/ZnSe/ZnS Quantum Dot-Based Synaptic Devices for Neuromorphic Computing

Nano letters, 2024-05, Vol.24 (19), p.5855-5861

2024

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One-step solvothermal synthesis of carnation flower-like SnS 2 as superior electrodes for supercapacitor applications

Applied surface science, 2017-12, Vol.425, p.923-931

2017

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Fabrication Process of Organic and Quantum Dot-Based Light-Emitting Diodes for Full-Color Display

Proceedings of the International Display Workshops, 2021-12, p.834

2021

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Highly Efficient, Surface Ligand Modified Quantum Dot Light‐Emitting Diodes Driven by Type‐Controllable MoTe2 Thin Film Transistors via Electron Charge Enhancer

Advanced electronic materials, 2021-10, Vol.7 (10), p.n/a

2021

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Effect of Excess Carriers on the Degradation of InP-Based Quantum-Dot Light-Emitting Diodes

ACS applied electronic materials, 2022-12, Vol.4 (12), p.6229-6236

2022

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Highly Efficient, Surface Ligand Modified Quantum Dot Light‐Emitting Diodes Driven by Type‐Controllable MoTe 2 Thin Film Transistors via Electron Charge Enhancer

Advanced electronic materials, 2021-10, Vol.7 (10)

2021

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Photosensitive Full-Swing Multi-Layer MoS 2 Inverters With Light Shielding Layers

IEEE electron device letters, 2017-01, Vol.38 (1), p.67-70

2017

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Simultaneous Detection of Dopamine and Uric Acid on Indium Tin Oxides Modified with Cost‐effective Gas‐phase Synthesized Single Walled Carbon Nanotubes

Electroanalysis (New York, N.Y.), 2017-08, Vol.29 (8), p.1925-1933

2017

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Progress in the development of the display performance of AR, VR, QLED and OLED devices in recent years

Fluorinated CYTOP passivation effects on the electrical reliability of multilayer MoS2 field-effect transistors

One-step solvothermal synthesis of carnation flower-like SnS2 as superior electrodes for supercapacitor applications

A Bioinspired Stretchable Sensory‐Neuromorphic System

Bright, Flexible, and Waterproof Top-Emitting InP Quantum Dot Light-Emitting Diodes on Al Foil

Optimum Design Configuration of Thin‐Film Transistors and Quantum‐Dot Light‐Emitting Diodes for Active‐Matrix Displays

P‐158: Highly Flexible InP‐Based Quantum Dot Light‐Emitting Diodes Fabricated on Heat‐Dissipating Al‐Coated PEN Substrate

Water-Soluble Thin Film Transistors and Circuits Based on Amorphous Indium–Gallium–Zinc Oxide

Progress in the Development of Active-Matrix Quantum-Dot Light-Emitting Diodes Driven by Non-Si Thin-Film Transistors

Threshold Voltage Control of Multilayered MoS2 Field‐Effect Transistors via Octadecyltrichlorosilane and their Applications to Active Matrixed Quantum Dot Displays Driven by Enhancement‐Mode Logic Gates

Low frequency noise characteristics in multilayer WSe2 field effect transistor

Photosensitive Full-Swing Multi-Layer MoS2 Inverters With Light Shielding Layers

Advances in display technology: augmented reality, virtual reality, quantum dot-based light-emitting diodes, and organic light-emitting diodes

Scalable and selective N-type conversion for carbon nanotube transistors via patternable polyvinyl alcohol stacked with hydrophobic layers and their application to complementary logic circuits

Spray-coated single walled carbon nanotubes as source and drain electrodes in SnO thin-film transistors

Field‐Effect Transistors: Threshold Voltage Control of Multilayered MoS2 Field‐Effect Transistors via Octadecyltrichlorosilane and their Applications to Active Matrixed Quantum Dot Displays Driven by Enhancement‐Mode Logic Gates (Small 7/2019)

High Performance of Quantum Dot Light-Emitting Diodes Using Enhanced Device Structure and Integration Method

Memristive Switching Mechanism in Colloidal InP/ZnSe/ZnS Quantum Dot-Based Synaptic Devices for Neuromorphic Computing

One-step solvothermal synthesis of carnation flower-like SnS 2 as superior electrodes for supercapacitor applications

Fabrication Process of Organic and Quantum Dot-Based Light-Emitting Diodes for Full-Color Display

Highly Efficient, Surface Ligand Modified Quantum Dot Light‐Emitting Diodes Driven by Type‐Controllable MoTe2 Thin Film Transistors via Electron Charge Enhancer

Effect of Excess Carriers on the Degradation of InP-Based Quantum-Dot Light-Emitting Diodes

Highly Efficient, Surface Ligand Modified Quantum Dot Light‐Emitting Diodes Driven by Type‐Controllable MoTe 2 Thin Film Transistors via Electron Charge Enhancer

Photosensitive Full-Swing Multi-Layer MoS 2 Inverters With Light Shielding Layers

Simultaneous Detection of Dopamine and Uric Acid on Indium Tin Oxides Modified with Cost‐effective Gas‐phase Synthesized Single Walled Carbon Nanotubes

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