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Performance and characteristics of double layer porous silicon oxide resistance random access memory

Applied physics letters, 2013-06, Vol.102 (25)

2013

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Bipolar Resistive RAM Characteristics Induced by Nickel Incorporated Into Silicon Oxide Dielectrics for IC Applications

IEEE electron device letters, 2012-12, Vol.33 (12), p.1696-1698

2012

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Steps Towards Industrialization of Cu–III–VI2Thin‐Film Solar Cells:Linking Materials/Device Designs to Process Design For Non‐stoichiometric Photovoltaic Materials

Advanced science, 2016-10, Vol.3 (10), p.1500196-n/a

2016

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A Novel Nanowire Channel Poly-Si TFT Functioning as Transistor and Nonvolatile SONOS Memory

IEEE electron device letters, 2007-09, Vol.28 (9), p.809-811

2007

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Preparation and characterization of CuInSe2 nano-particles

The Journal of physics and chemistry of solids, 2008-02, Vol.69 (2-3), p.637-640

2008

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Steps towards removing some obstacles of industrialization of CIGS solar cells

Physica status solidi. C, 2013-08, Vol.10 (7-8), p.1046-1049

2013

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Steps Towards Industrialization of Cu-III-VI 2 Thin-Film Solar Cells:Linking Materials/Device Designs to Process Design For Non-stoichiometric Photovoltaic Materials

Advanced science, 2016-10, Vol.3 (10), p.1500196

2016

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The growth of heteroepitaxial CuInSe2 on free-standing N-polar GaN

AIP advances, 2014-12, Vol.4 (12), p.127120-127120-10

2014

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Characteristics of hafnium oxide resistance random access memory with different setting compliance current

Applied physics letters, 2013-10, Vol.103 (16)

2013

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Characterization of CuInSe2 thin films grown by photo-assisted electrodeposition

Thin solid films, 2013-05, Vol.535, p.343-347

2013

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Direct growth of heteroepitaxial CuInSe2 on GaN (0001) by molecular beam epitaxy

Thin solid films, 2015-01, Vol.574, p.132-135

2015

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Structure and Composition Analysis of Cu(In,Al)Se2 Thin Films Prepared by Rapid Thermal Selenization

Jpn J Appl Phys, 2012-10, Vol.51 (10), p.10NC18-10NC18-3

2012

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Structure and Composition Analysis of Cu(In,Al)Se 2 Thin Films Prepared by Rapid Thermal Selenization

Japanese Journal of Applied Physics, 2012-10, Vol.51 (10S), p.10

2012

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Preparation of Cu(In,Al)Se2 thin films by rapid thermal selenization

2008 33rd IEEE Photovoltaic Specialists Conference, 2008, p.1-3

2008

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The Copper Corrosion and Sulfur Contamination Generated by a Three-Step Copper Chemical-Mechanical Polishing Process

MRS proceedings, 2006, Vol.914, Article 0914-F09-10

2006

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Influences of Sb on the growth and properties of CuInSe2 thin films

Japanese Journal of Applied Physics, 1995, Vol.34 (2B), p.1109-1112

1995

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Stoichiometric control of CuInSe2 thin films using a molecular beam epitaxy technique

Journal of crystal growth, 1995-05, Vol.150 (1-4), p.1206-1210

1995

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Dehydroxyl effect of Sn-doped silicon oxide resistance random access memory with supercritical CO2 fluid treatment

Applied physics letters, 2012-09, Vol.101 (11)

2012

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Crystal growth of CdTe alloyed with Zn, Se and S

Materials science & engineering. B, Solid-state materials for advanced technology, 1997-09, Vol.49 (1), p.1-4

1997

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Elimination of orientation domains and antiphase domains in the epitaxial films with chalcopyrite structure

Journal of applied physics, 1996-02, Vol.79 (3), p.1391-1396

1996

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Structure and Composition Analysis of Cu(In,Al)Se 2 Thin Films Prepared by Rapid Thermal Selenization

Japanese Journal of Applied Physics, 2012-10, Vol.51 (10S), p.10

2012

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Surfactant modified growth of CuInSe 2 thin films

Applied surface science, 1996, Vol.92, p.227-231

1996

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Applications of transmission electron microscopy to coal chemistry

Fuel (Guildford), 1987-07, Vol.66 (7), p.914-920

1987

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Surfactant modified growth of CuInSe2 thin films

Applied surface science, 1996-02, Vol.92 (1-4), p.227-231

1996

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High Substrate-Temperature (450–600°C) Fabrication of CuIn(S,Se) 2 Thin Films Using Hybrid Reactive Sputtering/Sulfurization Method

Japanese Journal of Applied Physics, 2000-01, Vol.39 (S1), p.168

2000

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Performance and characteristics of double layer porous silicon oxide resistance random access memory

Bipolar Resistive RAM Characteristics Induced by Nickel Incorporated Into Silicon Oxide Dielectrics for IC Applications

Steps Towards Industrialization of Cu–III–VI2Thin‐Film Solar Cells:Linking Materials/Device Designs to Process Design For Non‐stoichiometric Photovoltaic Materials

A Novel Nanowire Channel Poly-Si TFT Functioning as Transistor and Nonvolatile SONOS Memory

Preparation and characterization of CuInSe2 nano-particles

Steps towards removing some obstacles of industrialization of CIGS solar cells

Steps Towards Industrialization of Cu-III-VI 2 Thin-Film Solar Cells:Linking Materials/Device Designs to Process Design For Non-stoichiometric Photovoltaic Materials

The growth of heteroepitaxial CuInSe2 on free-standing N-polar GaN

Characteristics of hafnium oxide resistance random access memory with different setting compliance current

Characterization of CuInSe2 thin films grown by photo-assisted electrodeposition

Direct growth of heteroepitaxial CuInSe2 on GaN (0001) by molecular beam epitaxy

Structure and Composition Analysis of Cu(In,Al)Se2 Thin Films Prepared by Rapid Thermal Selenization

Structure and Composition Analysis of Cu(In,Al)Se 2 Thin Films Prepared by Rapid Thermal Selenization

Preparation of Cu(In,Al)Se2 thin films by rapid thermal selenization

The Copper Corrosion and Sulfur Contamination Generated by a Three-Step Copper Chemical-Mechanical Polishing Process

Influences of Sb on the growth and properties of CuInSe2 thin films

Stoichiometric control of CuInSe2 thin films using a molecular beam epitaxy technique

Dehydroxyl effect of Sn-doped silicon oxide resistance random access memory with supercritical CO2 fluid treatment

Crystal growth of CdTe alloyed with Zn, Se and S

Elimination of orientation domains and antiphase domains in the epitaxial films with chalcopyrite structure

Structure and Composition Analysis of Cu(In,Al)Se 2 Thin Films Prepared by Rapid Thermal Selenization

Surfactant modified growth of CuInSe 2 thin films

Applications of transmission electron microscopy to coal chemistry

Surfactant modified growth of CuInSe2 thin films

High Substrate-Temperature (450–600°C) Fabrication of CuIn(S,Se) 2 Thin Films Using Hybrid Reactive Sputtering/Sulfurization Method

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