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First Demonstration of a Logic-Process Compatible Junctionless Ferroelectric FinFET Synapse for Neuromorphic Applications

IEEE electron device letters, 2018-09, Vol.39 (9), p.1445-1448

2018

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Direct Observation of a Carbon Filament in Water-Resistant Organic Memory

ACS nano, 2015-07, Vol.9 (7), p.7306-7313

2015

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Simulational investigation of self-aligned bilayer linear grating enabling highly enhanced responsivity of MWIR InAs/GaSb type-II superlattice (T2SL) photodetector

Scientific reports, 2024-01, Vol.14 (1), p.2050-2050, Article 2050

2024

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Investigation of Self-Heating Effects in Gate-All-Around MOSFETs With Vertically Stacked Multiple Silicon Nanowire Channels

IEEE transactions on electron devices, 2017-11, Vol.64 (11), p.4393-4399

2017

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Foldable and Disposable Memory on Paper

Scientific reports, 2016-12, Vol.6 (1), p.38389-38389, Article 38389

2016

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Characterization of intrinsic subgap density-of-states in exfoliated MoS2 FETs using a multi-frequency capacitance-conductance technique

AIP advances, 2017-07, Vol.7 (7), p.075304-075304-5

2017

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Self-Curable Gate-All-Around MOSFETs Using Electrical Annealing to Repair Degradation Induced From Hot-Carrier Injection

IEEE transactions on electron devices, 2016-03, Vol.63 (3), p.910-915

2016

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Influence of Radiation-Induced Displacement Defect in 1.2 kV SiC Metal-Oxide-Semiconductor Field-Effect Transistors

Micromachines (Basel), 2022-06, Vol.13 (6), p.901

2022

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A Novel Technique for Curing Hot-Carrier-Induced Damage by Utilizing the Forward Current of the PN-Junction in a MOSFET

IEEE electron device letters, 2017-08, Vol.38 (8), p.1012-1014

2017

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Single-Scan Monochromatic Photonic Capacitance-Voltage Technique for Extraction of Subgap DOS Over the Bandgap in Amorphous Semiconductor TFTs

IEEE electron device letters, 2013-12, Vol.34 (12), p.1524-1526

2013

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Solar-Blind UV Photodetector Based on Atomic Layer-Deposited Cu2O and Nanomembrane β‑Ga2O3 pn Oxide Heterojunction

ACS omega, 2019-12, Vol.4 (24), p.20756-20761

2019

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On-State Current Degradation Owing to Displacement Defect by Terrestrial Cosmic Rays in Nanosheet FET

Micromachines (Basel), 2022-08, Vol.13 (8), p.1276

2022

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Direct Observation for Distinct Behaviors of Gamma‐Ray Irradiation‐Induced Subgap Density‐of‐States in Amorphous InGaZnO TFTs by Multiple‐Wavelength Light Source

Advanced electronic materials, 2024-08, Vol.10 (8), p.n/a

2024

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Unified Subthreshold Coupling Factor Technique for Surface Potential and Subgap Density-of-States in Amorphous Thin Film Transistors

IEEE electron device letters, 2013-05, Vol.34 (5), p.641-643

2013

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Local Electro-Thermal Annealing for Repair of Total Ionizing Dose-Induced Damage in Gate-All-Around MOSFETs

IEEE electron device letters, 2016-07, Vol.37 (7), p.843-846

2016

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Investigation of Low-Frequency Noise in Nonvolatile Memory Composed of a Gate- All-Around Junctionless Nanowire FET

IEEE transactions on electron devices, 2016-05, Vol.63 (5), p.2210-2213

2016

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Dual-Sweep Combinational Transconductance Technique for Separate Extraction of Parasitic Resistances in Amorphous Thin-Film Transistors

IEEE electron device letters, 2015-02, Vol.36 (2), p.144-146

2015

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Bias-Dependent Effective Channel Length for Extraction of Subgap DOS by Capacitance-Voltage Characteristics in Amorphous Semiconductor TFTs

IEEE transactions on electron devices, 2015-08, Vol.62 (8), p.2689-2694

2015

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Reply to Comments by Ortiz-Conde et al

IEEE transactions on electron devices, 2018-09, Vol.65 (9), p.4022-4024

2018

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Parallel synaptic design of ferroelectric tunnel junctions for neuromorphic computing

Neuromorphic computing and engineering, 2023-06, Vol.3 (2), p.24001

2023

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Joule Heating to Enhance the Performance of a Gate-All-Around Silicon Nanowire Transistor

IEEE transactions on electron devices, 2016-06, Vol.63 (6), p.2288-2292

2016

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Threshold Voltage Tuning Technique in Gate-All-Around MOSFETs by Utilizing Gate Electrode With Potential Distribution

IEEE electron device letters, 2016-11, Vol.37 (11), p.1391-1394

2016

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Gateless and Capacitorless Germanium Biristor with a Vertical Pillar Structure

Micromachines (Basel), 2021-07, Vol.12 (8), p.899

2021

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Comprehensive Study on the Relation Between Low-Frequency Noise and Asymmetric Parasitic Resistances in a Vertical Pillar-Type FET

IEEE electron device letters, 2017-08, Vol.38 (8), p.1008-1011

2017

Volltextzugriff (PDF)

Extraction Technique for Intrinsic Subgap DOS in a-IGZO TFTs by De-Embedding the Parasitic Capacitance Through the Photonic C- V Measurement

IEEE electron device letters, 2013-01, Vol.34 (1), p.57-59

2013

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First Demonstration of a Logic-Process Compatible Junctionless Ferroelectric FinFET Synapse for Neuromorphic Applications

Direct Observation of a Carbon Filament in Water-Resistant Organic Memory

Simulational investigation of self-aligned bilayer linear grating enabling highly enhanced responsivity of MWIR InAs/GaSb type-II superlattice (T2SL) photodetector

Investigation of Self-Heating Effects in Gate-All-Around MOSFETs With Vertically Stacked Multiple Silicon Nanowire Channels

Foldable and Disposable Memory on Paper

Characterization of intrinsic subgap density-of-states in exfoliated MoS2 FETs using a multi-frequency capacitance-conductance technique

Self-Curable Gate-All-Around MOSFETs Using Electrical Annealing to Repair Degradation Induced From Hot-Carrier Injection

Influence of Radiation-Induced Displacement Defect in 1.2 kV SiC Metal-Oxide-Semiconductor Field-Effect Transistors

A Novel Technique for Curing Hot-Carrier-Induced Damage by Utilizing the Forward Current of the PN-Junction in a MOSFET

Single-Scan Monochromatic Photonic Capacitance-Voltage Technique for Extraction of Subgap DOS Over the Bandgap in Amorphous Semiconductor TFTs

Solar-Blind UV Photodetector Based on Atomic Layer-Deposited Cu2O and Nanomembrane β‑Ga2O3 pn Oxide Heterojunction

On-State Current Degradation Owing to Displacement Defect by Terrestrial Cosmic Rays in Nanosheet FET

Direct Observation for Distinct Behaviors of Gamma‐Ray Irradiation‐Induced Subgap Density‐of‐States in Amorphous InGaZnO TFTs by Multiple‐Wavelength Light Source

Unified Subthreshold Coupling Factor Technique for Surface Potential and Subgap Density-of-States in Amorphous Thin Film Transistors

Local Electro-Thermal Annealing for Repair of Total Ionizing Dose-Induced Damage in Gate-All-Around MOSFETs

Investigation of Low-Frequency Noise in Nonvolatile Memory Composed of a Gate- All-Around Junctionless Nanowire FET

Dual-Sweep Combinational Transconductance Technique for Separate Extraction of Parasitic Resistances in Amorphous Thin-Film Transistors

Bias-Dependent Effective Channel Length for Extraction of Subgap DOS by Capacitance-Voltage Characteristics in Amorphous Semiconductor TFTs

Reply to Comments by Ortiz-Conde et al

Parallel synaptic design of ferroelectric tunnel junctions for neuromorphic computing

Joule Heating to Enhance the Performance of a Gate-All-Around Silicon Nanowire Transistor

Threshold Voltage Tuning Technique in Gate-All-Around MOSFETs by Utilizing Gate Electrode With Potential Distribution

Gateless and Capacitorless Germanium Biristor with a Vertical Pillar Structure

Comprehensive Study on the Relation Between Low-Frequency Noise and Asymmetric Parasitic Resistances in a Vertical Pillar-Type FET

Extraction Technique for Intrinsic Subgap DOS in a-IGZO TFTs by De-Embedding the Parasitic Capacitance Through the Photonic C- V Measurement

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