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Optical absorption evidence of a quantum size effect in porous silicon

Applied physics letters, 1993-03, Vol.62 (10), p.1155-1157

1993

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Infrared response of Pt/Si/ErSi1.7 heterostructure : tunable internal photoemission sensor

Applied physics letters, 1992-03, Vol.60 (10), p.1166-1168

1992

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Electronic transport properties of epitaxial erbium silicide/silicon heterostructures

Applied physics letters, 1989-07, Vol.55 (1), p.84-86

1989

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Porous silicon: material properties, visible photo- and electroluminescence

Applied surface science, 1993-01, Vol.65 (1-4), p.394-407

1993

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Growth, characterization and electrical properties of epitaxial erbium silicide

Thin solid films, 1990, Vol.184 (1), p.283-293

1990

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Conduction band discontinuity and electron mobility in a strained Si/SiGe heterostructure

Applied surface science, 1996-08, Vol.102, p.202-207

1996

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Epitaxial erbium silicide films on Si(111) surface: Fabrication, structure, and electrical properties

Applied surface science, 1989-09, Vol.38 (1), p.171-177

1989

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Near-infrared optical properties of CoSi2 thin films

Journal of applied physics, 1990-09, Vol.68 (5), p.2346-2350

1990

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Study of ballistic transport in Si-CoSi2-Si metal base transistors

Applied physics letters, 1986-08, Vol.49 (5), p.271-273

1986

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Co/Si(111) interface: formation of an initial CoSi2 phase at room temperature

Applied physics letters, 1987-11, Vol.51 (18), p.1448-1450

1987

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Photoinduced intersubband absorption in Si/SiGe quantum wells

Applied physics letters, 1995-11, Vol.67 (20), p.2948-2950

1995

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Tunable infrared photoemission sensor on silicon using SiGe/Si epitaxial heterostructures

Journal of crystal growth, 1995-12, Vol.157 (1-4), p.195-200

1995

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Transport and near-infrared optical properties of ErSi2 thin films

Journal of applied physics, 1992-11, Vol.72 (9), p.4295-4299

1992

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Electron mobility enhancement in a strained Si channel

Journal of crystal growth, 1995-12, Vol.157 (1), p.367-372

1995

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Tunable infrared photoemission sensor on Si using epitaxial ErSi2/Si heterostructures

Materials science & engineering. B, Solid-state materials for advanced technology, 1993-11, Vol.21 (2-3), p.312-316

1993

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Low-temperature transport properties of ultrathin CoSi2 epitaxial films

Applied physics letters, 1987-07, Vol.51 (3), p.169-171

1987

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Insulating, metallic, or semimetallic electronic nature of XSi2 compounds: application to WSi2

Journal of applied physics, 1987-08, Vol.62 (3), p.890-895

1987

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Infrared spectroscopy in p-type SiGe/Si quantum wells

Applied surface science, 1996-08, Vol.102, p.331-335

1996

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26-GHz etched-groove silicon permeable base transistor

IEEE electron device letters, 1991-10, Vol.12 (10), p.556-558

1991

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Absorption and resonant dispersion associated with normal incidence intersubband transitions in Si/SiGe quantum wells

Applied physics letters, 1995-12, Vol.67 (23), p.3462-3464

1995

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Si permeable-base transistor realization using a MOS-compatible technology

IEEE electron device letters, 1989-12, Vol.10 (12), p.550-552

1989

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Permeable base transistor fabrication by selective epitaxial growth of silicon on a submicrometer WSI2 grid

Applied physics letters, 1990-06, Vol.56 (23), p.2307-2309

1990

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Photo-induced intersubband absorption in Si/SiGe quantum wells

Journal of crystal growth, 1995-12, Vol.157 (1-4), p.227-230

1995

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Temperature dependence of Schottky barrier height on Si: experimental evidence for Fermi energy pinning relative to either valence or conduction band

Journal of electronic materials, 1990, Vol.19 (1), p.101-104

1990

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Covering and filling of porous silicon pores with Ge and Si using chemical vapor deposition

Journal of applied physics, 1995-09, Vol.78 (5), p.3428-3430

1995

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Optical absorption evidence of a quantum size effect in porous silicon

Infrared response of Pt/Si/ErSi1.7 heterostructure : tunable internal photoemission sensor

Electronic transport properties of epitaxial erbium silicide/silicon heterostructures

Porous silicon: material properties, visible photo- and electroluminescence

Growth, characterization and electrical properties of epitaxial erbium silicide

Conduction band discontinuity and electron mobility in a strained Si/SiGe heterostructure

Epitaxial erbium silicide films on Si(111) surface: Fabrication, structure, and electrical properties

Near-infrared optical properties of CoSi2 thin films

Study of ballistic transport in Si-CoSi2-Si metal base transistors

Co/Si(111) interface: formation of an initial CoSi2 phase at room temperature

Photoinduced intersubband absorption in Si/SiGe quantum wells

Tunable infrared photoemission sensor on silicon using SiGe/Si epitaxial heterostructures

Transport and near-infrared optical properties of ErSi2 thin films

Electron mobility enhancement in a strained Si channel

Tunable infrared photoemission sensor on Si using epitaxial ErSi2/Si heterostructures

Low-temperature transport properties of ultrathin CoSi2 epitaxial films

Insulating, metallic, or semimetallic electronic nature of XSi2 compounds: application to WSi2

Infrared spectroscopy in p-type SiGe/Si quantum wells

26-GHz etched-groove silicon permeable base transistor

Absorption and resonant dispersion associated with normal incidence intersubband transitions in Si/SiGe quantum wells

Si permeable-base transistor realization using a MOS-compatible technology

Permeable base transistor fabrication by selective epitaxial growth of silicon on a submicrometer WSI2 grid

Photo-induced intersubband absorption in Si/SiGe quantum wells

Temperature dependence of Schottky barrier height on Si: experimental evidence for Fermi energy pinning relative to either valence or conduction band

Covering and filling of porous silicon pores with Ge and Si using chemical vapor deposition

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