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Radiative recombination mechanisms in polar and non-polar InGaN/GaN quantum well LED structures

Applied physics letters, 2016-10, Vol.109 (15)

2016

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The consequences of high injected carrier densities on carrier localization and efficiency droop in InGaN/GaN quantum well structures

Journal of applied physics, 2012-04, Vol.111 (8), p.083512-083512-6

2012

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High excitation carrier density recombination dynamics of InGaN/GaN quantum well structures: Possible relevance to efficiency droop

Applied physics letters, 2013-01, Vol.102 (2)

2013

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Evaluation of growth methods for the heteroepitaxy of non-polar (112¯0) GAN on sapphire by MOVPE

Journal of crystal growth, 2014-12, Vol.408, p.32-41

2014

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High-performance three-layer 1.3-μm InAs-GaAs quantum-dot lasers with very low continuous-wave room-temperature threshold currents

IEEE photonics technology letters, 2005-06, Vol.17 (6), p.1139-1141

2005

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Long-wavelength light emission and lasing from InAs∕GaAs quantum dots covered by a GaAsSb strain-reducing layer

Applied physics letters, 2005-04, Vol.86 (14)

2005

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1.3 μm InAs/GaAs multilayer quantum-dot laser with extremely low room-temperature threshold current density

Electronics letters, 2004-10, Vol.40 (22), p.1412-1413

2004

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Influences of the spacer layer growth temperature on multilayer InAs∕GaAs quantum dot structures

Journal of applied physics, 2004-08, Vol.96 (4), p.1988-1992

2004

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Properties of non-polar a-plane GaN/AlGaN quantum wells

Journal of crystal growth, 2008-11, Vol.310 (23), p.4983-4986

2008

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The effect of indium concentration on the optical properties of a-plane InGaN/GaN quantum wells grown on r-plane sapphire substrates

Physica status solidi. A, Applications and materials science, 2011-07, Vol.208 (7), p.1529-1531

2011

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Electroluminescence Studies of Modulation p-Doped Quantum Dot Laser Structures

IEEE journal of quantum electronics, 2010-12, Vol.46 (12), p.1847-1853

2010

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The impact of gross well width fluctuations on the efficiency of GaN-based light emitting diodes

Applied physics letters, 2013-09, Vol.103 (14)

2013

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On the origin of blue-green emission from heteroepitaxial nonpolar a-plane InGaN quantum wells

Physica status solidi. C, 2012-03, Vol.9 (3-4), p.465-468

2012

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Low temperature carrier redistribution dynamics in InGaN/GaN quantum wells

Journal of applied physics, 2014-03, Vol.115 (11)

2014

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Polarized photoluminescence excitation spectroscopy of a-plane InGaN/GaN multiple quantum wells grown on r-plane sapphire

Journal of applied physics, 2014-03, Vol.115 (11)

2014

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Optical transitions in type-II InAs∕GaAs quantum dots covered by a GaAsSb strain-reducing layer

Applied physics letters, 2007-07, Vol.91 (2)

2007

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Improved performance of 1.3μm multilayer InAs quantum-dot lasers using a high-growth-temperature GaAs spacer layer

Applied physics letters, 2004-08, Vol.85 (5), p.704-706

2004

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Low temperature photoluminescence and cathodoluminescence studies of nonpolar GaN grown using epitaxial lateral overgrowth

Journal of applied physics, 2010-08, Vol.108 (3), p.033523-033523-7

2010

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Optical properties of GaN/AlGaN quantum wells grown on nonpolar substrates

Applied physics letters, 2008-09, Vol.93 (10), p.101901-101901-3

2008

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Optical polarization anisotropy of a -plane GaN/AlGaN multiple quantum well structures grown on r -plane sapphire substrates

Journal of applied physics, 2009-06, Vol.105 (12), p.123112-123112-6

2009

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Room-temperature 1.6μm light emission from InAs∕GaAs quantum dots with a thin GaAsSb cap layer

Journal of applied physics, 2006-02, Vol.99 (4)

2006

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Enhanced nonradiative Auger recombination in p -type modulation doped InAs/GaAs quantum dots

Applied physics letters, 2008-09, Vol.93 (10), p.101903-101903-3

2008

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Study of efficiency droop and carrier localisation in an InGaN/GaN quantum well structure

Physica status solidi. C, 2011-07, Vol.8 (7-8), p.2194-2196

2011

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Lasing and spontaneous emission characteristics of 1.3 μm In(Ga)As quantum-dot lasers

Physica. E, Low-dimensional systems & nanostructures, 2005-02, Vol.26 (1), p.382-385

2005

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1.3 μm InAs/GaAs quantum-dot laser with low-threshold current density and negative characteristic temperature above room temperature

Electronics letters, 2006-08, Vol.42 (16), p.922-923

2006

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Radiative recombination mechanisms in polar and non-polar InGaN/GaN quantum well LED structures

The consequences of high injected carrier densities on carrier localization and efficiency droop in InGaN/GaN quantum well structures

High excitation carrier density recombination dynamics of InGaN/GaN quantum well structures: Possible relevance to efficiency droop

Evaluation of growth methods for the heteroepitaxy of non-polar (112¯0) GAN on sapphire by MOVPE

High-performance three-layer 1.3-μm InAs-GaAs quantum-dot lasers with very low continuous-wave room-temperature threshold currents

Long-wavelength light emission and lasing from InAs∕GaAs quantum dots covered by a GaAsSb strain-reducing layer

1.3 μm InAs/GaAs multilayer quantum-dot laser with extremely low room-temperature threshold current density

Influences of the spacer layer growth temperature on multilayer InAs∕GaAs quantum dot structures

Properties of non-polar a-plane GaN/AlGaN quantum wells

The effect of indium concentration on the optical properties of a-plane InGaN/GaN quantum wells grown on r-plane sapphire substrates

Electroluminescence Studies of Modulation p-Doped Quantum Dot Laser Structures

The impact of gross well width fluctuations on the efficiency of GaN-based light emitting diodes

On the origin of blue-green emission from heteroepitaxial nonpolar a-plane InGaN quantum wells

Low temperature carrier redistribution dynamics in InGaN/GaN quantum wells

Polarized photoluminescence excitation spectroscopy of a-plane InGaN/GaN multiple quantum wells grown on r-plane sapphire

Optical transitions in type-II InAs∕GaAs quantum dots covered by a GaAsSb strain-reducing layer

Improved performance of 1.3μm multilayer InAs quantum-dot lasers using a high-growth-temperature GaAs spacer layer

Low temperature photoluminescence and cathodoluminescence studies of nonpolar GaN grown using epitaxial lateral overgrowth

Optical properties of GaN/AlGaN quantum wells grown on nonpolar substrates

Optical polarization anisotropy of a -plane GaN/AlGaN multiple quantum well structures grown on r -plane sapphire substrates

Room-temperature 1.6μm light emission from InAs∕GaAs quantum dots with a thin GaAsSb cap layer

Enhanced nonradiative Auger recombination in p -type modulation doped InAs/GaAs quantum dots

Study of efficiency droop and carrier localisation in an InGaN/GaN quantum well structure

Lasing and spontaneous emission characteristics of 1.3 μm In(Ga)As quantum-dot lasers

1.3 μm InAs/GaAs quantum-dot laser with low-threshold current density and negative characteristic temperature above room temperature

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