UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

Antiphase boundaries in GaP layers grown on (001) Si by chemical beam epitaxy

Acta materialia, 2002-04, Vol.50 (6), p.1275-1287

2002

Volltextzugriff (PDF)

Non-Stoichiometry in Semiconductors

2012

Volltextzugriff (PDF)

Relation between surface chemistry and solar cell performance of CuInSe2 single crystal electrodes

Surface science, 1984-03, Vol.138 (2/3), p.475-487

1984

Volltextzugriff (PDF)

Temperature dependent photoconductivity and photoluminescence of Cd1 − xMnxTe

Journal of luminescence, 1987-03, Vol.36 (6), p.347-354

1987

Volltextzugriff (PDF)

[formula omitted] multiple heterostructures on GaP substrates

Journal of crystal growth, 1995-01, Vol.147 (1-2), p.35-38

1995

Volltextzugriff (PDF)

Vapor-Phase Epitaxy at Superatmospheric Pressure

Encyclopedia of Materials: Science and Technology, 2011, p.1-8

Bachmann, K.J.

2011

Volltextzugriff (PDF)

Epitaxy

Encyclopedia of Materials: Science and Technology, 2011, p.2791-2799

Bachmann, K.J.

2011

Volltextzugriff (PDF)

Vapor Epitaxy of Chalcopyrite Structure Semiconductors

Encyclopedia of Materials: Science and Technology, 2011, p.9467-9471

Bachmann, K.J.

2011

Volltextzugriff (PDF)

Chemical Beam Epitaxy

Encyclopedia of Materials: Science and Technology, 2011, p.1-9

Bachmann, K.J.

2011

Volltextzugriff (PDF)

Origins of defects in self assembled GaP islands grown on Si(001) and Si(111)

Thin solid films, 1999-12, Vol.357 (1), p.53-56

1999

Volltextzugriff (PDF)

The growth of In-rich bulk single crystals of GaxIn1−xPyAs1−y via the gradient freeze method

Journal of crystal growth, 1978-07, Vol.43 (6), p.752-755

1978

Volltextzugriff (PDF)

The current status of the preparation of single crystals, bicrystals, and epitaxial layers of p-InP and of polycrystalline p-InP films for photovoltaic applications

Journal of crystal growth, 1977-07, Vol.39 (1), p.137-150

1977

Volltextzugriff (PDF)

Real-time monitoring of steady-state pulsed chemical beam epitaxy by p-polarized reflectance

Journal of crystal growth, 1998, Vol.183 (3), p.323-337

1998

Volltextzugriff (PDF)

Real-time optical monitoring of Ga xIn 1 − xP and GaP heteroepitaxy on Si under pulsed chemical beam conditions

Journal of crystal growth, 1996, Vol.164 (1), p.34-39

1996

Volltextzugriff (PDF)

Simulation of a vertical reactor for high pressure organometallic chemical vapor deposition

Materials science & engineering. B, Solid-state materials for advanced technology, 1998-12, Vol.57 (1), p.9-17

1998

Volltextzugriff (PDF)

Real-time optical monitoring of GaxIn1-xP and GaP heteroepitaxy on Si under pulsed chemical beam conditions

Journal of crystal growth, 1996-07, Vol.164 (1-4), p.34-39

1996

Volltextzugriff (PDF)

Growth kinetics and characterizations of gallium nitride thin films by remote PECVD

Journal of materials research, 1993-04, Vol.8 (4), p.847-854

1993

Volltextzugriff (PDF)

Migration-enhanced pulsed chemical beam epitaxy of GaP on Si(001)

Journal of crystal growth, 1995, Vol.150 (1-4), p.691-695

1995

Volltextzugriff (PDF)

Real-time optical monitoring of heteroepitaxial growth processes on Si under pulsed chemical beam epitaxy conditions

Applied surface science, 1996-08, Vol.102, p.47-51

1996

Volltextzugriff (PDF)

Molecular layer epitaxy by real-time optical process monitoring

Applied surface science, 1997-03, Vol.112, p.38-47

1997

Volltextzugriff (PDF)

Photoconductivity of GaAsAlAs multiple quantum wells: Temperature dependent optical transitions

Superlattices and microstructures, 1986, Vol.2 (3), p.247-250

1986

Volltextzugriff (PDF)

Zur theorie potentiostatischer ein-und umschaltvorgänge bei der elektrokristallisation

Electrochimica acta, 1966-09, Vol.11 (9), p.1279-1299

1966

Volltextzugriff (PDF)

Growth of gallium phosphide layers by chemical beam epitaxy on oxide patterned (001)silicon substrates

Materials science & engineering. B, Solid-state materials for advanced technology, 1998-06, Vol.54 (3), p.207-209

1998

Volltextzugriff (PDF)

Optimal design of a high pressure organometallic chemical vapor deposition reactor

Mathematical and computer modelling, 1999-04, Vol.29 (8), p.65-80

1999

Volltextzugriff (PDF)

Kinetics of Epitaxial Growth

Encyclopedia of Materials: Science and Technology, 2011, p.1-11

2011

Volltextzugriff (PDF)

1 – 25 von 91

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(52)
Mit Volltextzugriff
(69)

Publikationsform

Sprache

Erscheinungsjahr

n.n

Thema

Science & Technology
(44)
Physics
(36)
Technology
(36)
Physical Sciences
(34)
Materials Science
(32)
Materials Science, Multidisciplinary
(23)
Physics, Applied
(23)
Exact Sciences And Technology
(19)
Cross-Disciplinary Physics: Materials Science; Rheology
(12)
Crystallography
(12)
Physics, Condensed Matter
(11)
Methods Of Deposition Of Films And Coatings; Film Growth And Epitaxy
(10)
Photovoltaic Cells
(10)
Solar Energy
(10)
Direct Energy Converters
(9)
Indium Compounds
(9)
Photoelectric Cells
(9)
Chemistry
(8)
Indium Phosphides
(8)
Phosphides
(8)

15 weitere anzeigen...

Weniger anzeigen...

Zeitschrift / Serie

5 weitere anzeigen...

Weniger anzeigen...

Menü

Weitere Dienste

Einstellungen

Antiphase boundaries in GaP layers grown on (001) Si by chemical beam epitaxy

Non-Stoichiometry in Semiconductors

Relation between surface chemistry and solar cell performance of CuInSe2 single crystal electrodes

Temperature dependent photoconductivity and photoluminescence of Cd1 − xMnxTe

[formula omitted] multiple heterostructures on GaP substrates

Vapor-Phase Epitaxy at Superatmospheric Pressure

Epitaxy

Vapor Epitaxy of Chalcopyrite Structure Semiconductors

Chemical Beam Epitaxy

Origins of defects in self assembled GaP islands grown on Si(001) and Si(111)

The growth of In-rich bulk single crystals of GaxIn1−xPyAs1−y via the gradient freeze method

The current status of the preparation of single crystals, bicrystals, and epitaxial layers of p-InP and of polycrystalline p-InP films for photovoltaic applications

Real-time monitoring of steady-state pulsed chemical beam epitaxy by p-polarized reflectance

Real-time optical monitoring of Ga xIn 1 − xP and GaP heteroepitaxy on Si under pulsed chemical beam conditions

Simulation of a vertical reactor for high pressure organometallic chemical vapor deposition

Real-time optical monitoring of GaxIn1-xP and GaP heteroepitaxy on Si under pulsed chemical beam conditions

Growth kinetics and characterizations of gallium nitride thin films by remote PECVD

Migration-enhanced pulsed chemical beam epitaxy of GaP on Si(001)

Real-time optical monitoring of heteroepitaxial growth processes on Si under pulsed chemical beam epitaxy conditions

Molecular layer epitaxy by real-time optical process monitoring

Photoconductivity of GaAsAlAs multiple quantum wells: Temperature dependent optical transitions

Zur theorie potentiostatischer ein-und umschaltvorgänge bei der elektrokristallisation

Growth of gallium phosphide layers by chemical beam epitaxy on oxide patterned (001)silicon substrates

Optimal design of a high pressure organometallic chemical vapor deposition reactor

Kinetics of Epitaxial Growth

Suchergebnisse filtern