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An AlN/Al0.85Ga0.15N high electron mobility transistor

Applied physics letters, 2016-07, Vol.109 (3)

2016

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High-frequency, high-power performance of AlGaN-channel high-electron-mobility transistors: an RF simulation study

Japanese Journal of Applied Physics, 2019-06, Vol.58 (SC), p.SCCD04

2019

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Extreme Temperature Operation of Ultra-Wide Bandgap AlGaN High Electron Mobility Transistors

IEEE transactions on semiconductor manufacturing, 2019-11, Vol.32 (4), p.473-477

2019

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Ultra-wide band gap AlGaN polarization-doped field effect transistor

Japanese Journal of Applied Physics, 2018-07, Vol.57 (7), p.74103

2018

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Operation Up to 500 °C of Al0.85Ga0.15N/Al0.7Ga0.3N High Electron Mobility Transistors

IEEE journal of the Electron Devices Society, 2019, Vol.7, p.444-452

2019

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Al-rich AlGaN based transistors

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 2020-03, Vol.38 (2)

2020

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RF Performance of Al0.85Ga0.15N/Al0.70Ga0.30N High Electron Mobility Transistors With 80-nm Gates

IEEE electron device letters, 2019-01, Vol.40 (1), p.17-20

2019

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Multidimensional thermal analysis of an ultrawide bandgap AlGaN channel high electron mobility transistor

Applied physics letters, 2019-10, Vol.115 (15)

2019

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Enhancement-mode AlGaN channel high electron mobility transistor enabled by p-AlGaN gate

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2019-03, Vol.37 (2)

2019

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Analysis of 2D Transport and Performance Characteristics for Lateral Power Devices Based on AlGaN Alloys

ECS journal of solid state science and technology, 2017-01, Vol.6 (11), p.S3114-S3118

2017

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Enhancement-mode Al0.85Ga0.15N/Al0.7Ga0.3N high electron mobility transistor with fluorine treatment

Applied physics letters, 2019-03, Vol.114 (11)

2019

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Evaluation of a "Field Cage" for Electric Field Control in GaN-Based HEMTs That Extends the Scalability of Breakdown Into the kV Regime

IEEE transactions on electron devices, 2017-09, Vol.64 (9), p.3740-3747

2017

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Interdependence of Electronic and Thermal Transport in AlxGa1-xN Channel HEMTs

IEEE electron device letters, 2020-03, Vol.41 (3), p.461-464

2020

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Device-Level Multidimensional Thermal Dynamics With Implications for Current and Future Wide Bandgap Electronics

Journal of electronic packaging, 2020-09, Vol.142 (3)

2020

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Thermal Conductivity of β‑Phase Ga2O3 and (Al x Ga1– x )2O3 Heteroepitaxial Thin Films

ACS applied materials & interfaces, 2021-08, Vol.13 (32), p.38477-38490

2021

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Saturation Velocity Measurement of Al0.7Ga0.3N-Channel High Electron Mobility Transistors

Journal of electronic materials, 2019-09, Vol.48 (9), p.5581-5585

2019

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Inductively coupled BCl3/Cl2/Ar plasma etching of Al-rich AlGaN

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2017-03, Vol.35 (2)

2017

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AlGaN polarization-doped field effect transistor with compositionally graded channel from Al0.6Ga0.4N to AlN

Applied physics letters, 2019-02, Vol.114 (5)

2019

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Effect of Gamma Irradiation on DC Performance of Circular-Shaped AlGaN/GaN High Electron Mobility Transistors

ECS transactions, 2014, Vol.61 (4), p.205-210

2014

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Spectroscopic investigations of band offsets of MgO|AlxGa1-xN epitaxial heterostructures with varying AlN content

Applied physics letters, 2015-09, Vol.107 (10)

2015

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Computational analysis of breakdown voltage enhancement for AlGaN/GaN HEMTs through optimal pairing of deep level impurity density and contact design

Solid-state electronics, 2014-01, Vol.91, p.59-66

2014

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Sensitivity of on-resistance and threshold voltage to buffer-related deep level defects in AlGaN/GaN high electron mobility transistors

Semiconductor science and technology, 2013-07, Vol.28 (7), p.74020

2013

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Visible-blind and solar-blind detection induced by defects in AlGaN high electron mobility transistors

Journal of applied physics, 2018-03, Vol.123 (11), p.114502

2018

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Al-rich AlGaN based transistors

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2020-01, Vol.38 (2)

2020

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High temperature operation to 500 °C of AlGaN graded polarization-doped field-effect transistors

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2020-04, Vol.38 (3)

2020

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An AlN/Al0.85Ga0.15N high electron mobility transistor

High-frequency, high-power performance of AlGaN-channel high-electron-mobility transistors: an RF simulation study

Extreme Temperature Operation of Ultra-Wide Bandgap AlGaN High Electron Mobility Transistors

Ultra-wide band gap AlGaN polarization-doped field effect transistor

Operation Up to 500 °C of Al0.85Ga0.15N/Al0.7Ga0.3N High Electron Mobility Transistors

Al-rich AlGaN based transistors

RF Performance of Al0.85Ga0.15N/Al0.70Ga0.30N High Electron Mobility Transistors With 80-nm Gates

Multidimensional thermal analysis of an ultrawide bandgap AlGaN channel high electron mobility transistor

Enhancement-mode AlGaN channel high electron mobility transistor enabled by p-AlGaN gate

Analysis of 2D Transport and Performance Characteristics for Lateral Power Devices Based on AlGaN Alloys

Enhancement-mode Al0.85Ga0.15N/Al0.7Ga0.3N high electron mobility transistor with fluorine treatment

Evaluation of a "Field Cage" for Electric Field Control in GaN-Based HEMTs That Extends the Scalability of Breakdown Into the kV Regime

Interdependence of Electronic and Thermal Transport in AlxGa1-xN Channel HEMTs

Device-Level Multidimensional Thermal Dynamics With Implications for Current and Future Wide Bandgap Electronics

Thermal Conductivity of β‑Phase Ga2O3 and (Al x Ga1– x )2O3 Heteroepitaxial Thin Films

Saturation Velocity Measurement of Al0.7Ga0.3N-Channel High Electron Mobility Transistors

Inductively coupled BCl3/Cl2/Ar plasma etching of Al-rich AlGaN

AlGaN polarization-doped field effect transistor with compositionally graded channel from Al0.6Ga0.4N to AlN

Effect of Gamma Irradiation on DC Performance of Circular-Shaped AlGaN/GaN High Electron Mobility Transistors

Spectroscopic investigations of band offsets of MgO|AlxGa1-xN epitaxial heterostructures with varying AlN content

Computational analysis of breakdown voltage enhancement for AlGaN/GaN HEMTs through optimal pairing of deep level impurity density and contact design

Sensitivity of on-resistance and threshold voltage to buffer-related deep level defects in AlGaN/GaN high electron mobility transistors

Visible-blind and solar-blind detection induced by defects in AlGaN high electron mobility transistors

Al-rich AlGaN based transistors

High temperature operation to 500 °C of AlGaN graded polarization-doped field-effect transistors

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