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A survey of ohmic contacts to III-V compound semiconductors

Thin solid films, 1997-10, Vol.308, p.599-606

1997

Volltextzugriff (PDF)

Epitaxially-grown GaN junction field effect transistors

IEEE transactions on electron devices, 2000-03, Vol.47 (3), p.507-511

2000

Volltextzugriff (PDF)

Device characteristics of the GaAs/InGaAsN/GaAs p-n-p double heterojunction bipolar transistor

IEEE electron device letters, 2001-03, Vol.22 (3), p.113-115

2001

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Significant operating voltage reduction on high-speed GaAs-based heterojunction bipolar transistors using a low band gap InGaAsN base layer

IEEE transactions on electron devices, 2002-08, Vol.49 (8), p.1329-1335

2002

Volltextzugriff (PDF)

DC characteristics of MOVPE-grown Npn InGaP/InGaAsN DHBTs

Electronics letters, 2000-01, Vol.36 (1), p.81-83

2000

Volltextzugriff (PDF)

Simulation of npn and pnp AlGaN/GaN heterojunction bipolar transistors performances: limiting factors and optimum design

IEEE transactions on electron devices, 2001-03, Vol.48 (3), p.427-432

2001

Volltextzugriff (PDF)

Comparison of AlGaN/GaN high electron mobility transistors grown on AlN/SiC templates or sapphire

Solid-state electronics, 2002-04, Vol.46 (4), p.513-523

2002

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Demonstration of GaN MIS diodes by using AlN and Ga2O3(Gd2O3) as dielectrics

Solid-state electronics, 1998-12, Vol.42 (12), p.2177-2181

1998

Volltextzugriff (PDF)

Development of a GaAs monolithic surface acoustic wave integrated circuit

IEEE journal of solid-state circuits, 1999-09, Vol.34 (9), p.1254-1258

1999

Volltextzugriff (PDF)

Addition to "Development of a GaAs monolithic surface acoustic wave integrated circuit"

IEEE journal of solid-state circuits, 2000-08, Vol.35 (8), p.1253

2000

Volltextzugriff (PDF)

Effect of low dose -irradiation on DC performance of circular AlGaN/GaN high electron mobility transistors

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2014-01, Vol.32 (3)

2014

Volltextzugriff (PDF)

Addition to "Development of a GaAs monolithic surface acoustic wave integrated circuit"

IEEE journal of solid-state circuits, 2000-08, Vol.35 (8), p.1253-1253

2000

Volltextzugriff (PDF)

Ion-implanted GaN junction field effect transistor

Applied physics letters, 1996-04, Vol.68 (16), p.2273-2275

1996

Volltextzugriff (PDF)

High performance GaAs JFET with shallow implanted Cd-gate

Electronics letters, 1995-05, Vol.31 (11), p.923-924

1995

Volltextzugriff (PDF)

AlGaN High Electron Mobility Transistor for High Temperature Logic

IMAPSource Proceedings, 2023-11, Vol.2022 (HiTEN)

2023

Volltextzugriff (PDF)

Growth and fabrication of GaN/AlGaN heterojunction bipolar transistor

Applied physics letters, 1999-05, Vol.74 (18), p.2702-2704

1999

Volltextzugriff (PDF)

High-energy proton irradiation effects on AlGaN/GaN high-electron mobility transistors

Journal of electronic materials, 2002-05, Vol.31 (5), p.437-441

2002

Volltextzugriff (PDF)

Photoconductive semiconductor switches

IEEE transactions on plasma science, 1997-04, Vol.25 (2), p.124-130

1997

Volltextzugriff (PDF)

Thermal stability of WSi X Schottky contacts on n-type 4H-SiC

Solid-state electronics, 2004, Vol.48 (1), p.175-178

2004

Volltextzugriff (PDF)

Surface passivation of AlGaN/GaN HEMTs using MBE-grown MgO or Sc2O3

Solid-state electronics, 2002-04, Vol.46 (4), p.467-476

2002

Volltextzugriff (PDF)

Proton irradiation of MgO- or Sc2O3 passivated AlGaN/GaN high electron mobility transistors

Solid-state electronics, 2003-06, Vol.47 (6), p.1015-1020

2003

Volltextzugriff (PDF)

High temperature thermal stability of Au/Ti/WSi x Schottky contacts on n-type 4H-SiC

Solid-state electronics, 2003, Vol.47 (8), p.1345-1350

2003

Volltextzugriff (PDF)

Effect of gate length on DC performance of AlGaN/GaN HEMTs grown by MBE

Solid-state electronics, 2001-12, Vol.45 (12), p.1979-1985

2001

Volltextzugriff (PDF)

Inductively coupled high-density plasma-induced etch damage of GaN MESFETs

Solid-state electronics, 2001, Vol.45 (1), p.13-17

2001

Volltextzugriff (PDF)

Thermal stability of WSiX Schottky contacts on n-type 4H-SiC

Solid-state electronics, 2004-01, Vol.48 (1), p.175-178

2004

Volltextzugriff (PDF)

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A survey of ohmic contacts to III-V compound semiconductors

Epitaxially-grown GaN junction field effect transistors

Device characteristics of the GaAs/InGaAsN/GaAs p-n-p double heterojunction bipolar transistor

Significant operating voltage reduction on high-speed GaAs-based heterojunction bipolar transistors using a low band gap InGaAsN base layer

DC characteristics of MOVPE-grown Npn InGaP/InGaAsN DHBTs

Simulation of npn and pnp AlGaN/GaN heterojunction bipolar transistors performances: limiting factors and optimum design

Comparison of AlGaN/GaN high electron mobility transistors grown on AlN/SiC templates or sapphire

Demonstration of GaN MIS diodes by using AlN and Ga2O3(Gd2O3) as dielectrics

Development of a GaAs monolithic surface acoustic wave integrated circuit

Addition to "Development of a GaAs monolithic surface acoustic wave integrated circuit"

Effect of low dose -irradiation on DC performance of circular AlGaN/GaN high electron mobility transistors

Addition to "Development of a GaAs monolithic surface acoustic wave integrated circuit"

Ion-implanted GaN junction field effect transistor

High performance GaAs JFET with shallow implanted Cd-gate

AlGaN High Electron Mobility Transistor for High Temperature Logic

Growth and fabrication of GaN/AlGaN heterojunction bipolar transistor

High-energy proton irradiation effects on AlGaN/GaN high-electron mobility transistors

Photoconductive semiconductor switches

Thermal stability of WSi X Schottky contacts on n-type 4H-SiC

Surface passivation of AlGaN/GaN HEMTs using MBE-grown MgO or Sc2O3

Proton irradiation of MgO- or Sc2O3 passivated AlGaN/GaN high electron mobility transistors

High temperature thermal stability of Au/Ti/WSi x Schottky contacts on n-type 4H-SiC

Effect of gate length on DC performance of AlGaN/GaN HEMTs grown by MBE

Inductively coupled high-density plasma-induced etch damage of GaN MESFETs

Thermal stability of WSiX Schottky contacts on n-type 4H-SiC

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