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Luminescence redshift of thick InGaN/GaN heterostructures induced by the migration of surface adsorbed atoms

Journal of crystal growth, 2021-07, Vol.565, p.126151, Article 126151

2021

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High-resolution characterization of hexagonal boron nitride coatings exposed to aqueous and air oxidative environments

Nano research, 2017-06, Vol.10 (6), p.2046-2055

2017

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Electron emission from H-terminated diamond enhanced by polypyrrole grafting

Carbon (New York), 2021-05, Vol.176, p.642-649

2021

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Interface-Driven Strain in Heavy Ion-Irradiated Zr/Nb Nanoscale Metallic Multilayers: Validation of Distortion Modeling via Local Strain Mapping

ACS applied materials & interfaces, 2022-03, Vol.14 (10), p.12777-12796

2022

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Highly Sensitive Detection of Surface and Intercalated Impurities in Graphene by LEIS

Langmuir, 2015-09, Vol.31 (35), p.9628-9635

2015

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Electron Tractor Beam: Deterministic Manipulation of Liquid Droplets on Solid Surfaces

Advanced materials interfaces, 2023-01, Vol.10 (2), p.n/a

2023

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Depth resolution enhancement by combined DSIMS and TOF-LEIS profiling

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2011-02, Vol.269 (3), p.369-373

2011

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3D localization of spinel (MgAl2O4) and sodium contamination in alumina by TOF-SIMS

Materials characterization, 2019-02, Vol.148, p.252-258

2019

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Low energy ion scattering as a depth profiling tool for thin layers - Case of bromine methanol etched CdTe

Vacuum, 2018-06, Vol.152, p.138-144

2018

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Conversion of chirality to twisting via sequential one-dimensional and two-dimensional growth of graphene spirals

Nature materials, 2024-03, Vol.23 (3), p.331-338

2024

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Sn-CeO2 thin films prepared by rf magnetron sputtering : XPS and SIMS study

Applied surface science, 2009-04, Vol.255 (13-14), p.6656-6660

2009

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A study of Ga layers on Si(1 0 0)-(2 × 1) by SR-PES: Influence of adsorbed water

Surface science, 2007-05, Vol.601 (9), p.2047-2053

2007

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Formation of copper islands on a native SiO2 surface at elevated temperatures

Applied surface science, 2010-03, Vol.256 (11), p.3636-3641

2010

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Angle-resolved XPS depth profiling of modeled structures: testing and improvement of the method

Surface and interface analysis, 2010-06, Vol.42 (6-7), p.649-652

2010

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Real-time observation of self-limiting SiO sub(2)/Si decomposition catalysed by gold silicide droplets

RSC advances, 2015-11, Vol.5 (123), p.101726-101731

2015

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Deposition and in-situ characterization of ultra-thin films

Thin solid films, 2004-07, Vol.459 (1), p.17-22

2004

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Sn–CeO 2 thin films prepared by rf magnetron sputtering: XPS and SIMS study

Applied surface science, 2009-04, Vol.255 (13), p.6656-6660

2009

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Motion in Games: 5th International Conference, MIG 2012, Rennes, France, November 15-17, 2012, Proceedings

2012, 2012

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Formation of copper islands on a native SiO 2 surface at elevated temperatures

Applied surface science, 2010-03, Vol.256 (11), p.3636-3641

2010

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Real-time observation of self-limiting SiO 2 /Si decomposition catalysed by gold silicide droplets

RSC advances, 2015, Vol.5 (123), p.101726-101731

2015

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Controlling Three Agents in a Quarrel: Lessons Learnt

Motion in Games, p.158-169

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TOF-LEIS analysis of ultra thin films: Ga and Ga-N layer growth on Si(111)

Surface science, 2004, Vol.566-68, p.885-889

2004

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Real-time observation of self-limiting SiO2/Si decomposition catalysed by gold silicide dropletsElectronic supplementary information (ESI) available: (1) Electron beam induced SiO2 decomposition, (2) role of the electron beam on Au catalysed SiO2 decomposition, (3) chemical analysis of the gold layer using ToF-LEIS and XPS, (4) morphological analysis of the void using AFM, and (5) resuming SiO2 decomposition when supplied with Au NPs. See DOI: 10.1039/c5ra19472e

2015-11

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TOF–LEIS analysis of ultra thin films: Ga and Ga-N layer growth on Si(1 1 1)

Surface science, 2004-09, Vol.566 (2), p.885-889

2004

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Electron diffraction determines molecular absolute configuration in a pharmaceutical nanocrystal

Science (American Association for the Advancement of Science), 2019-05, Vol.364 (6441), p.667-669

2019

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Luminescence redshift of thick InGaN/GaN heterostructures induced by the migration of surface adsorbed atoms

High-resolution characterization of hexagonal boron nitride coatings exposed to aqueous and air oxidative environments

Electron emission from H-terminated diamond enhanced by polypyrrole grafting

Interface-Driven Strain in Heavy Ion-Irradiated Zr/Nb Nanoscale Metallic Multilayers: Validation of Distortion Modeling via Local Strain Mapping

Highly Sensitive Detection of Surface and Intercalated Impurities in Graphene by LEIS

Electron Tractor Beam: Deterministic Manipulation of Liquid Droplets on Solid Surfaces

Depth resolution enhancement by combined DSIMS and TOF-LEIS profiling

3D localization of spinel (MgAl2O4) and sodium contamination in alumina by TOF-SIMS

Low energy ion scattering as a depth profiling tool for thin layers - Case of bromine methanol etched CdTe

Conversion of chirality to twisting via sequential one-dimensional and two-dimensional growth of graphene spirals

Sn-CeO2 thin films prepared by rf magnetron sputtering : XPS and SIMS study

A study of Ga layers on Si(1 0 0)-(2 × 1) by SR-PES: Influence of adsorbed water

Formation of copper islands on a native SiO2 surface at elevated temperatures

Angle-resolved XPS depth profiling of modeled structures: testing and improvement of the method

Real-time observation of self-limiting SiO sub(2)/Si decomposition catalysed by gold silicide droplets

Deposition and in-situ characterization of ultra-thin films

Sn–CeO 2 thin films prepared by rf magnetron sputtering: XPS and SIMS study

Motion in Games: 5th International Conference, MIG 2012, Rennes, France, November 15-17, 2012, Proceedings

Formation of copper islands on a native SiO 2 surface at elevated temperatures

Real-time observation of self-limiting SiO 2 /Si decomposition catalysed by gold silicide droplets

Controlling Three Agents in a Quarrel: Lessons Learnt

TOF-LEIS analysis of ultra thin films: Ga and Ga-N layer growth on Si(111)

TOF–LEIS analysis of ultra thin films: Ga and Ga-N layer growth on Si(1 1 1)

Electron diffraction determines molecular absolute configuration in a pharmaceutical nanocrystal

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