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Selective Area Growth of GaN Nanowires on Graphene Nanodots

Crystal growth & design, 2020-02, Vol.20 (2), p.552-559

2020

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Modeling of the electron beam induced current signal in nanowires with an axial p-n junction

Nanotechnology, 2022-09, Vol.33 (39), p.395701

2022

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Robust spatial memory maps encoded by networks with transient connections

PLoS computational biology, 2018-09, Vol.14 (9), p.e1006433-e1006433

2018

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Transient cell assembly networks encode stable spatial memories

Scientific reports, 2017-06, Vol.7 (1), p.3959-12, Article 3959

2017

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High Power Single Mode 1300-nm Superlattice Based VCSEL: Impact of the Buried Tunnel Junction Diameter on Performance

IEEE journal of quantum electronics, 2022-04, Vol.58 (2), p.1-15

2022

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Flexible inorganic light emitting diodes based on semiconductor nanowires

Chemical science (Cambridge), 2017, Vol.8 (12), p.794-7911

2017

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Wafer‐fused 1300 nm VCSELs with an active region based on superlattice

Electronics letters, 2021-08, Vol.57 (18), p.697-698

2021

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Investigation of GaN nanowires containing AlN/GaN multiple quantum discs by EBIC and CL techniques

Nanotechnology, 2019-05, Vol.30 (21), p.214006-214006

2019

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Topological Schemas of Memory Spaces

Frontiers in computational neuroscience, 2018-04, Vol.12, p.27-27

2018

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Influence of the doping type on the temperature dependencies of the photoluminescence efficiency of InGaAlAs/InGaAs/InP heterostructures

Journal of luminescence, 2021-11, Vol.239, p.118393, Article 118393

2021

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20-Gbps 1300-nm range wafer-fused vertical-cavity surface-emitting lasers with InGaAs/InAlGaAs superlattice-based active region

Optical engineering, 2022-09, Vol.61 (9)

2022

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Influence of Substrate Microstructure on the Transport Properties of CVD-Graphene

ACS applied materials & interfaces, 2016-01, Vol.8 (1), p.240-246

2016

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Replays of spatial memories suppress topological fluctuations in cognitive map

Network neuroscience (Cambridge, Mass.), 2019-01, Vol.3 (3), p.707-724

2019

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Long-Wavelength VCSELs: Status and Prospects

Photonics, 2023-03, Vol.10 (3), p.268

2023

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1.3 μm optically-pumped monolithic VCSEL based on GaAs with InGa(Al)As superlattice active region

Laser physics letters, 2022-07, Vol.19 (7), p.75801

2022

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Low temperature deposition of vanadium dioxide on III–V semiconductors and integration on mid-infrared quantum cascade lasers

AIP advances, 2023-01, Vol.13 (1), p.15315-015315-6

2023

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Optimization of the optical coupling in nanowire-based integrated photonic platforms by FDTD simulation

Beilstein journal of nanotechnology, 2018-08, Vol.9 (1), p.2248-2254

2018

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Fabrication and Characterization of 5.2 um Quantum-Cascade Lasers Grown by Molecular-Beam Epitaxy

2023 International Conference on Electrical Engineering and Photonics (EExPolytech), 2023, p.390-393

2023

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High-Power Quantum Cascade Lasers Emitting at 8 μm: Technology and Analysis

Nanomaterials (Basel, Switzerland), 2022-11, Vol.12 (22), p.3971

2022

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Impact of Device Topology on the Performance of High-Speed 1550 nm Wafer-Fused VCSELs

Photonics, 2023-06, Vol.10 (6), p.660

2023

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Substrate-Free InGaN/GaN Nanowire Light-Emitting Diodes

Nanoscale research letters, 2015-11, Vol.10 (1), p.447-447, Article 447

2015

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Photoluminescence of 1300 nm Range Strained InGaAs/InGaAlAs Superlattices

2023 International Conference on Electrical Engineering and Photonics (EExPolytech), 2023, p.363-365

2023

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Comparative Analysis of InGaAs/GaAs Quantum Dots Produced by Various Epitaxial Techniques

2022 International Conference on Electrical Engineering and Photonics (EExPolytech), 2022, p.253-256

2022

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Heat Dissipation in Flexible Nitride Nanowire Light-Emitting Diodes

Nanomaterials (Basel, Switzerland), 2020-11, Vol.10 (11), p.2271

2020

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A model of topological mapping of space in bat hippocampus

Hippocampus, 2016-10, Vol.26 (10), p.1345-1353

2016

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Selective Area Growth of GaN Nanowires on Graphene Nanodots

Modeling of the electron beam induced current signal in nanowires with an axial p-n junction

Robust spatial memory maps encoded by networks with transient connections

Transient cell assembly networks encode stable spatial memories

High Power Single Mode 1300-nm Superlattice Based VCSEL: Impact of the Buried Tunnel Junction Diameter on Performance

Flexible inorganic light emitting diodes based on semiconductor nanowires

Wafer‐fused 1300 nm VCSELs with an active region based on superlattice

Investigation of GaN nanowires containing AlN/GaN multiple quantum discs by EBIC and CL techniques

Topological Schemas of Memory Spaces

Influence of the doping type on the temperature dependencies of the photoluminescence efficiency of InGaAlAs/InGaAs/InP heterostructures

20-Gbps 1300-nm range wafer-fused vertical-cavity surface-emitting lasers with InGaAs/InAlGaAs superlattice-based active region

Influence of Substrate Microstructure on the Transport Properties of CVD-Graphene

Replays of spatial memories suppress topological fluctuations in cognitive map

Long-Wavelength VCSELs: Status and Prospects

1.3 μm optically-pumped monolithic VCSEL based on GaAs with InGa(Al)As superlattice active region

Low temperature deposition of vanadium dioxide on III–V semiconductors and integration on mid-infrared quantum cascade lasers

Optimization of the optical coupling in nanowire-based integrated photonic platforms by FDTD simulation

Fabrication and Characterization of 5.2 um Quantum-Cascade Lasers Grown by Molecular-Beam Epitaxy

High-Power Quantum Cascade Lasers Emitting at 8 μm: Technology and Analysis

Impact of Device Topology on the Performance of High-Speed 1550 nm Wafer-Fused VCSELs

Substrate-Free InGaN/GaN Nanowire Light-Emitting Diodes

Photoluminescence of 1300 nm Range Strained InGaAs/InGaAlAs Superlattices

Comparative Analysis of InGaAs/GaAs Quantum Dots Produced by Various Epitaxial Techniques

Heat Dissipation in Flexible Nitride Nanowire Light-Emitting Diodes

A model of topological mapping of space in bat hippocampus

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