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Gain characteristics of InGaN/GaN quantum well diode lasers

Applied physics letters, 1998-03, Vol.72 (12), p.1418-1420

1998

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Mechanism of efficient ultraviolet lasing in GaN/AlGaN separate-confinement heterostructures

Applied physics letters, 1999-12, Vol.75 (25), p.3905-3907

1999

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Optical studies of GaN and GaN/AlGaN heterostructures on SiC substrates

Applied physics letters, 1996-08, Vol.69 (6), p.740-742

1996

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Pulsed operation lasing in a cleaved-facet InGaN/GaN MQW SCH laser grown on 6H-SiC

Electronics letters, 1997-08, Vol.33 (18), p.1556

1997

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Dynamics of photoexcited carriers in AlxGa1−xN/GaN double heterostructures

Journal of applied physics, 1997-09, Vol.82 (6), p.3158-3160

1997

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Experimental determination of impact ionization coefficients in (100) GaAs

IEEE electron device letters, 1983, Vol.4 (6), p.181-185

1983

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Strain determination in heteroepitaxial GaN

Applied physics letters, 1997-08, Vol.71 (6), p.829-831

1997

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Status of Nitride Based Light Emitting and Laser Diodes on SiC

MRS proceedings, 1997, Vol.482, Article 1169

1997

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Optical Properties and Lasing in (In, Al)GaN Structures

Physica status solidi. A, Applied research, 2001-01, Vol.183 (1), p.105-109

2001

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Large external Δ T and cooling power densities in thin-film Bi 2 Te 3 -superlattice thermoelectric cooling devices

Applied physics letters, 2006-09, Vol.89 (12), p.122117-122117-3

2006

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Proton isolated In0.2Ga0.8As/GaAs strained-layer superlattice avalanche photodiode

Applied physics letters, 1986-04, Vol.48 (15), p.1015-1017

1986

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The effect of electroabsorption on the determination of ionization coefficients

Applied physics letters, 1981-11, Vol.39 (10), p.813-815

1981

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The determination of impact ionization coefficients in (100) gallium arsenide using avalanche noise and photocurrent multiplication measurements

IEEE transactions on electron devices, 1985-11, Vol.32 (11), p.2454-2466

1985

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IEEE_Xplore

Photocurrent multiplication in ion implanted lateral In0.2Ga0.8As/GaAs strained-layer superlattice photodetectors

Applied physics letters, 1985-10, Vol.47 (7), p.733-735

1985

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Photoluminescence, Reflectance, and Magnetospectroscopy of Shallow Excitons in GaN

MRS proceedings, 1997, Vol.449, Article 713

1997

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Electron and hole impact ionization coefficients in InP determined by photomultiplication measurements

Applied physics letters, 1982-01, Vol.40 (7), p.589-591

1982

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Phase Formation and Morphology in Nickel and Nickel/Gold Contacts to Gallium Nitride

MRS proceedings, 1997, Vol.468, Article 431

1997

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Electroabsorption produced mixed injection and its effect on the determination of ionization coefficients

Solid-state electronics, 1982-12, Vol.25 (12), p.1189-1200

1982

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Long-wavelength (1.3- to 1.6-µm) detectors for fiber-optical communications

IEEE transactions on electron devices, 1982-09, Vol.29 (9), p.1355-1371

1982

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IEEE_Xplore

Improvement in leakage characteristics of Ge-on-Si photodetectors

The 9th International Conference on Group IV Photonics (GFP), 2012, p.84-86

2012

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IEEE_Xplore

Impact ionization coefficients in In0.2Ga0.8As/GaAs strained-layer superlattices

Applied physics letters, 1986-07, Vol.49 (4), p.212-214

1986

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IIA-6 the influence of electroabsorption of recombination radiation on the determination of ionization coefficients

IEEE transactions on electron devices, 1981-10, Vol.28 (10), p.1213-1213

1981

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IEEE_Xplore

The determination of impact ionization coefficients in In0.2Ga0.8As/GaAs strained-layer superlattice Mesa photodiodes

Journal of electronic materials, 1986-07, Vol.15 (4), p.221-227

1986

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Microstructure-Based Lasing in GaN/AlGaN Separate Confinement Heterostructures

MRS proceedings, 1999, Vol.595, Article F99W11.22

1999

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Microstructure-based lasing in GaN/AlGaN separate confinement heterostructures

MRS Internet journal of nitride semiconductor research, 2000, Vol.5 (S1), p.661-667

2000

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Gain characteristics of InGaN/GaN quantum well diode lasers

Mechanism of efficient ultraviolet lasing in GaN/AlGaN separate-confinement heterostructures

Optical studies of GaN and GaN/AlGaN heterostructures on SiC substrates

Pulsed operation lasing in a cleaved-facet InGaN/GaN MQW SCH laser grown on 6H-SiC

Dynamics of photoexcited carriers in AlxGa1−xN/GaN double heterostructures

Experimental determination of impact ionization coefficients in (100) GaAs

Strain determination in heteroepitaxial GaN

Status of Nitride Based Light Emitting and Laser Diodes on SiC

Optical Properties and Lasing in (In, Al)GaN Structures

Large external Δ T and cooling power densities in thin-film Bi 2 Te 3 -superlattice thermoelectric cooling devices

Proton isolated In0.2Ga0.8As/GaAs strained-layer superlattice avalanche photodiode

The effect of electroabsorption on the determination of ionization coefficients

The determination of impact ionization coefficients in (100) gallium arsenide using avalanche noise and photocurrent multiplication measurements

Photocurrent multiplication in ion implanted lateral In0.2Ga0.8As/GaAs strained-layer superlattice photodetectors

Photoluminescence, Reflectance, and Magnetospectroscopy of Shallow Excitons in GaN

Electron and hole impact ionization coefficients in InP determined by photomultiplication measurements

Phase Formation and Morphology in Nickel and Nickel/Gold Contacts to Gallium Nitride

Electroabsorption produced mixed injection and its effect on the determination of ionization coefficients

Long-wavelength (1.3- to 1.6-µm) detectors for fiber-optical communications

Improvement in leakage characteristics of Ge-on-Si photodetectors

Impact ionization coefficients in In0.2Ga0.8As/GaAs strained-layer superlattices

IIA-6 the influence of electroabsorption of recombination radiation on the determination of ionization coefficients

The determination of impact ionization coefficients in In0.2Ga0.8As/GaAs strained-layer superlattice Mesa photodiodes

Microstructure-Based Lasing in GaN/AlGaN Separate Confinement Heterostructures

Microstructure-based lasing in GaN/AlGaN separate confinement heterostructures

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