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Reinterpretation of degradation kinetics of amorphous silicon

Applied physics letters, 1989-03, Vol.54 (11), p.1037-1039

1989

Volltextzugriff (PDF)

Effects of surface preparation on the properties of metal/CdTe junctions

Journal of applied physics, 1983-10, Vol.54 (10), p.5982-5989

1983

Volltextzugriff (PDF)

Properties of ZnO films deposited onto InP by spray pyrolysis

Thin solid films, 1986-02, Vol.136 (1), p.1-10

1986

Volltextzugriff (PDF)

Electrons in Solids: an Introductory Survey. Third Edition

Bube, R H

1992

Volltextzugriff (PDF)

A new mechanism for superlinear photoconductivity with relevance to amorphous silicon

Journal of applied physics, 1993-10, Vol.74 (8), p.5138-5143

BUBE, R. H

1993

Volltextzugriff (PDF)

Carrier-induced mechanism for defect formation in hydrogenated amorphous silicon

Philosophical magazine. B, Physics of condensed matter. Structural, electronic, optical, and magnetic properties., 1996-09, Vol.74 (3), p.309-315

1996

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Electrical properties of CdTe films and junctions

Journal of applied physics, 1985-01, Vol.57 (2), p.400-410

1985

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Native tellurium dioxide layer on cadmium telluride: A high-resolution electron microscopy study

Applied physics letters, 1981-12, Vol.39 (12), p.951-953

1981

Volltextzugriff (PDF)

Relative carrier densities and trap effects on the properties of CdS/CdTe

Journal of applied physics, 1987-03, Vol.61 (5), p.2038-2045

1987

Volltextzugriff (PDF)

Surface effects on metal/CdTe junctions and CdTe heterojunctions

Journal of physics. D, Applied physics, 1983-12, Vol.16 (12), p.2391-2404

1983

Volltextzugriff (PDF)

Properties of zinc-phosphide junctions and interfaces

Journal of applied physics, 1987-04, Vol.61 (8), p.2941-2946

1987

Volltextzugriff (PDF)

Identification of defects in amorphous silicon

Physical review letters, 1990-07, Vol.65 (4), p.464-467

1990

Volltextzugriff (PDF)

Surface preparation effects on efficient indium-tin-oxide-CdTe and CdS-CdTe heterojunction solar cells

Journal of applied physics, 1983-05, Vol.54 (5), p.2750-2756

1983

Volltextzugriff (PDF)

Fundamentals of Solar Cells: Photovoltaic Solar Energy Conversion

1, 1983

Volltextzugriff (PDF)

Electrons in solids: an introductory survey

Bube, Richard H

3rd ed., 1992

Volltextzugriff (PDF)

Kinetic and steady-state effects of illumination on defects in hydrogenated amorphous silicon

Journal of applied physics, 1989-07, Vol.66 (2), p.820-828

1989

Volltextzugriff (PDF)

Determination of crystallographic polarity of CdTe crystals with Auger electron spectroscopy

Journal of applied physics, 1987-02, Vol.61 (3), p.924-927

1987

Volltextzugriff (PDF)

Properties of Au/oxide/InP metal-interfacial layer-semiconductor junctions

Journal of applied physics, 1985-09, Vol.58 (5), p.1876-1885

1985

Volltextzugriff (PDF)

Determination of high-field-enhanced emission rates with the constant capacitance-voltage transient technique

Journal of applied physics, 1989-04, Vol.65 (7), p.2734-2738

1989

Volltextzugriff (PDF)

Corrections to the constant photoconductivity method for determining defect densities, with application to amorphous silicon

Journal of applied physics, 1992-12, Vol.72 (12), p.5766-5777

1992

Volltextzugriff (PDF)

Variation of photoconductivity with doping and optical degradation in hydrogenated amorphous silicon

Journal of applied physics, 1989-10, Vol.66 (7), p.3074-3081

1989

Volltextzugriff (PDF)

Evidence for a stretched-exponential description of optical defect generation in hydrogenated amorphous silicon

Applied physics letters, 1990-07, Vol.57 (1), p.79-80

1990

Volltextzugriff (PDF)

Limitations on models describing the kinetics of light-induced defect creation in hydrogenated amorphous silicon

Journal of applied physics, 1992-05, Vol.71 (10), p.5246-5247

1992

Volltextzugriff (PDF)

Interpretation of the activation energy derived from a stretched-exponential description of defect density kinetics in hydrogenated amorphous silicon

Journal of applied physics, 1993-06, Vol.73 (12), p.8659-8661

1993

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Transport measurements in p-type CdTe single crystals and ion-beam doped thin films

Journal of applied physics, 1993-06, Vol.73 (12), p.8359-8363

1993

Volltextzugriff (PDF)

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Reinterpretation of degradation kinetics of amorphous silicon

Effects of surface preparation on the properties of metal/CdTe junctions

Properties of ZnO films deposited onto InP by spray pyrolysis

Electrons in Solids: an Introductory Survey. Third Edition

A new mechanism for superlinear photoconductivity with relevance to amorphous silicon

Carrier-induced mechanism for defect formation in hydrogenated amorphous silicon

Electrical properties of CdTe films and junctions

Native tellurium dioxide layer on cadmium telluride: A high-resolution electron microscopy study

Relative carrier densities and trap effects on the properties of CdS/CdTe

Surface effects on metal/CdTe junctions and CdTe heterojunctions

Properties of zinc-phosphide junctions and interfaces

Identification of defects in amorphous silicon

Surface preparation effects on efficient indium-tin-oxide-CdTe and CdS-CdTe heterojunction solar cells

Fundamentals of Solar Cells: Photovoltaic Solar Energy Conversion

Electrons in solids: an introductory survey

Kinetic and steady-state effects of illumination on defects in hydrogenated amorphous silicon

Determination of crystallographic polarity of CdTe crystals with Auger electron spectroscopy

Properties of Au/oxide/InP metal-interfacial layer-semiconductor junctions

Determination of high-field-enhanced emission rates with the constant capacitance-voltage transient technique

Corrections to the constant photoconductivity method for determining defect densities, with application to amorphous silicon

Variation of photoconductivity with doping and optical degradation in hydrogenated amorphous silicon

Evidence for a stretched-exponential description of optical defect generation in hydrogenated amorphous silicon

Limitations on models describing the kinetics of light-induced defect creation in hydrogenated amorphous silicon

Interpretation of the activation energy derived from a stretched-exponential description of defect density kinetics in hydrogenated amorphous silicon

Transport measurements in p-type CdTe single crystals and ion-beam doped thin films

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