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Punchthrough-Voltage Enhancement of AlGaN/GaN HEMTs Using AlGaN Double-Heterojunction Confinement

IEEE transactions on electron devices, 2008-12, Vol.55 (12), p.3354-3359

2008

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AlGaN/GaN/AlGaN DH-HEMTs Breakdown Voltage Enhancement Using Multiple Grating Field Plates (MGFPs)

IEEE transactions on electron devices, 2010-06, Vol.57 (6), p.1208-1216

2010

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Improved Vertical Isolation for Normally-Off High Voltage GaN-HFETs on n-SiC Substrates

IEEE transactions on electron devices, 2013-10, Vol.60 (10), p.3084-3090

2013

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Self-Heating in GaN Transistors Designed for High-Power Operation

IEEE transactions on electron devices, 2014-10, Vol.61 (10), p.3429-3434

2014

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On the Conduction Properties of Vertical GaN n-Channel Trench MISFETs

IEEE journal of the Electron Devices Society, 2021, Vol.9, p.215-228

2021

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Role of substrate quality on the performance of semipolar ( 11 2 ¯ 2 ) InGaN light-emitting diodes

Journal of applied physics, 2016-10, Vol.120 (13)

2016

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Polarization‐Engineered n+GaN/InGaN/AlGaN/GaN Normally‐Off MOS HEMTs

Physica status solidi. A, Applications and materials science, 2017-11, Vol.214 (11), p.n/a

2017

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Semipolar (112-2) InGaN light-emitting diodes grown on chemically-mechanically polished GaN templates

Physica status solidi. A, Applications and materials science, 2015-10, Vol.212 (10), p.2196-2200

2015

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Semi-polar (112¯2)-GaN templates grown on 100 mm trench-patterned r-plane sapphire

physica status solidi (b), 2015-05, Vol.252 (5), p.1189-1194

2015

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Investigation of inversion domain formation in AlN grown on sapphire by MOVPE

Physica status solidi. C, 2012-03, Vol.9 (3-4), p.496-498

2012

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AlGaN Metal--Semiconductor--Metal Photodetectors on Planar and Epitaxial Laterally Overgrown AlN/Sapphire Templates for the Ultraviolet C Spectral Region

Japanese Journal of Applied Physics, 2013-08, Vol.52 (8), p.08JF03-08JF03-4

2013

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Optimization of GaN wafer bow grown on cone shaped patterned sapphire substrates

Journal of crystal growth, 2013-01, Vol.363, p.109-112

2013

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Influence of Carrier Lifetime, Transit Time, and Operation Voltages on the Photoresponse of Visible-Blind AlGaN Metal--Semiconductor--Metal Photodetectors

Japanese Journal of Applied Physics, 2013-08, Vol.52 (8), p.08JF01-08JF01-4

2013

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Temperature Dependence of Dark Spot Diameters in GaN and AlGaN

physica status solidi (b), 2021-11, Vol.258 (11), p.n/a

2021

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AlGaN/GaN/GaN:C Back-Barrier HFETs With Breakdown Voltage of Over 1 kV and Low RON × A

IEEE transactions on electron devices, 2010-11, Vol.57 (11), p.3050-3058

2010

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Spatial correlation of defect-selective etching and dark luminescence spots in Al x Ga1−x N

Semiconductor science and technology, 2024-07, Vol.39 (7)

2024

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Experimental Investigation of GaN-on-AlN/SiC Transistors With Regard to Monolithic Integration

IEEE transactions on power electronics, 2024-10, Vol.39 (10), p.12615-12624

2024

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Spatial correlation of defect-selective etching and dark luminescence spots in Al x Ga 1-x N

Semiconductor science and technology, 2024-05

2024

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Comparative study of buffer designs for high breakdown voltage AlGaNGaN HFETs

Physica status solidi. C, 2011-07, Vol.8 (7-8), p.2427-2429

2011

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(Invited) Technological Approaches Towards High Voltage, Fast Switching GaN Power Transistors

ECS transactions, 2013, Vol.52 (1), p.979-989

2013

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On the EQE-bias characteristics of bottom-illuminated AlGaN-based metal-semiconductor-metal photodetectors with asymmetric electrode geometry

Journal of applied physics, 2017-11, Vol.122 (17)

2017

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GaN Drift Layers on Sapphire and GaN Substrates for 1.2 kV Class Vertical Power Devices

Physica status solidi. PSS-RRL. Rapid research letters, 2024-03

2024

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Au‐Free Ohmic Contact for GaN High‐Electron‐Mobility Transistors

Physica status solidi. A, Applications and materials science, 2022-04, Vol.219 (8), p.n/a

2022

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Correlating Interface and Border Traps With Distinctive Features of C – V Curves in Vertical Al 2 O 3 /GaN MOS Capacitors

IEEE transactions on electron devices, 2024-03, Vol.71 (3), p.1561-1566

2024

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Selective area isolation of β-Ga2O3 using multiple energy nitrogen ion implantation

Applied physics letters, 2018-10, Vol.113 (17)

2018

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Punchthrough-Voltage Enhancement of AlGaN/GaN HEMTs Using AlGaN Double-Heterojunction Confinement

AlGaN/GaN/AlGaN DH-HEMTs Breakdown Voltage Enhancement Using Multiple Grating Field Plates (MGFPs)

Improved Vertical Isolation for Normally-Off High Voltage GaN-HFETs on n-SiC Substrates

Self-Heating in GaN Transistors Designed for High-Power Operation

On the Conduction Properties of Vertical GaN n-Channel Trench MISFETs

Role of substrate quality on the performance of semipolar ( 11 2 ¯ 2 ) InGaN light-emitting diodes

Polarization‐Engineered n+GaN/InGaN/AlGaN/GaN Normally‐Off MOS HEMTs

Semipolar (112-2) InGaN light-emitting diodes grown on chemically-mechanically polished GaN templates

Semi-polar (112¯2)-GaN templates grown on 100 mm trench-patterned r-plane sapphire

Investigation of inversion domain formation in AlN grown on sapphire by MOVPE

AlGaN Metal--Semiconductor--Metal Photodetectors on Planar and Epitaxial Laterally Overgrown AlN/Sapphire Templates for the Ultraviolet C Spectral Region

Optimization of GaN wafer bow grown on cone shaped patterned sapphire substrates

Influence of Carrier Lifetime, Transit Time, and Operation Voltages on the Photoresponse of Visible-Blind AlGaN Metal--Semiconductor--Metal Photodetectors

Temperature Dependence of Dark Spot Diameters in GaN and AlGaN

AlGaN/GaN/GaN:C Back-Barrier HFETs With Breakdown Voltage of Over 1 kV and Low RON × A

Spatial correlation of defect-selective etching and dark luminescence spots in Al x Ga1−x N

Experimental Investigation of GaN-on-AlN/SiC Transistors With Regard to Monolithic Integration

Spatial correlation of defect-selective etching and dark luminescence spots in Al x Ga 1-x N

Comparative study of buffer designs for high breakdown voltage AlGaNGaN HFETs

(Invited) Technological Approaches Towards High Voltage, Fast Switching GaN Power Transistors

On the EQE-bias characteristics of bottom-illuminated AlGaN-based metal-semiconductor-metal photodetectors with asymmetric electrode geometry

GaN Drift Layers on Sapphire and GaN Substrates for 1.2 kV Class Vertical Power Devices

Au‐Free Ohmic Contact for GaN High‐Electron‐Mobility Transistors

Correlating Interface and Border Traps With Distinctive Features of C – V Curves in Vertical Al 2 O 3 /GaN MOS Capacitors

Selective area isolation of β-Ga2O3 using multiple energy nitrogen ion implantation

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