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Template-assisted selective epitaxy of III–V nanoscale devices for co-planar heterogeneous integration with Si

Applied physics letters, 2015-06, Vol.106 (23)

2015

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Formation of Compositionally Abrupt Axial Heterojunctions in Silicon-Germanium Nanowires

Science (American Association for the Advancement of Science), 2009-11, Vol.326 (5957), p.1247-1250

2009

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Quantitative Nanoscale Imaging of Lattice Distortions in Epitaxial Semiconductor Heterostructures Using Nanofocused X‑ray Bragg Projection Ptychography

Nano letters, 2012-10, Vol.12 (10), p.5148-5154

2012

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Effect of hot carrier stress on device junctions measured by electron holography and scanning capacitance microscopy

Applied physics letters, 2018-06, Vol.112 (23)

2018

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Nanoscale strain distributions in embedded SiGe semiconductor devices revealed by precession electron diffraction and dual lens dark field electron holography

Applied physics letters, 2015-01, Vol.106 (4)

2015

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Variable magnification dual lens electron holography for semiconductor junction profiling and strain mapping

Ultramicroscopy, 2013-01, Vol.124, p.117-129

2013

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Evidence for segregation of Te in Ge2Sb2Te5 films: Effect on the “phase-change” stress

Applied physics letters, 2007-04, Vol.90 (14)

2007

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Dual Lens Electron Holography for High Spatial Resolution Junction and Strain Mapping of Semiconductor Devices

Microscopy and microanalysis, 2014-08, Vol.20 (S3), p.240-241

2014

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High-quality aluminum oxide gate dielectrics by ultra-high-vacuum reactive atomic-beam deposition

Journal of applied physics, 2001-07, Vol.90 (1), p.512-514

2001

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Sharp Reduction of Contact Resistivities by Effective Schottky Barrier Lowering With Silicides as Diffusion Sources

IEEE electron device letters, 2010-07, Vol.31 (7), p.731-733

2010

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Nanoscale Strain Mapping in Embedded SiGe Devices by Dual Lens Dark Field Electron Holography and Precession Electron Diffraction

Microscopy and microanalysis, 2015-08, Vol.21 (S3), p.1963-1964

2015

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Electron energy‐loss near‐edge structure – a tool for the investigation of electronic structure on the nanometre scale

Journal of microscopy (Oxford), 2001-08, Vol.203 (2), p.135-175

2001

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Switching of ferroelectric polarization in epitaxial BaTiO₃ films on silicon without a conducting bottom electrode

Nature nanotechnology, 2013-10, Vol.8 (10), p.748-754

2013

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Mgr Charles-Louis Gay (1815-1892): Un artiste au service du Christ

2017

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Materials and electrical characterization of physical vapor deposited LaxLu1−xO3 thin films on 300 mm silicon

Applied physics letters, 2011-03, Vol.98 (12)

2011

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The nitrogen aggregation sequence and the formation of voidites in diamond

Diamond and related materials, 2000, Vol.9 (1), p.87-93

2000

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Les Dix décisives: 1869-1879

2022

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High-K Gate Dielectric Structures by Atomic Layer Deposition for the 32nm and Beyond Nodes

ECS transactions, 2008, Vol.16 (4), p.291-305

2008

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Concevoir et faire vivre un projet d'établissement en bibliothèque

2019

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Off-axis electron holography with a dual-lens imaging system and its usefulness in 2-D potential mapping of semiconductor devices

Ultramicroscopy, 2004-11, Vol.101 (2-4), p.63-72

2004

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Direct evidence for abrupt postcrystallization germanium precipitation in thin phase-change films of Sb–15at.% Ge

Applied physics letters, 2008-08, Vol.93 (7)

2008

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Double spin-torque magnetic tunnel junction devices for last-level cache applications

2022 International Electron Devices Meeting (IEDM), 2022, p.10.2.1-10.2.4

2022

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Calcium Concentration Dependence of the Intergranular Film Thickness in Silicon Nitride

Journal of the American Ceramic Society, 1994-04, Vol.77 (4), p.911-914

1994

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Quantitative near‐edge structure analysis of diamond‐like carbon in the electron microscope using a two‐window method

Journal of microscopy (Oxford), 1995-10, Vol.180 (1), p.22-32

1995

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Template-assisted selective epitaxy of III–V nanoscale devices for co-planar heterogeneous integration with Si

Formation of Compositionally Abrupt Axial Heterojunctions in Silicon-Germanium Nanowires

Quantitative Nanoscale Imaging of Lattice Distortions in Epitaxial Semiconductor Heterostructures Using Nanofocused X‑ray Bragg Projection Ptychography

Effect of hot carrier stress on device junctions measured by electron holography and scanning capacitance microscopy

Nanoscale strain distributions in embedded SiGe semiconductor devices revealed by precession electron diffraction and dual lens dark field electron holography

Variable magnification dual lens electron holography for semiconductor junction profiling and strain mapping

Evidence for segregation of Te in Ge2Sb2Te5 films: Effect on the “phase-change” stress

Dual Lens Electron Holography for High Spatial Resolution Junction and Strain Mapping of Semiconductor Devices

High-quality aluminum oxide gate dielectrics by ultra-high-vacuum reactive atomic-beam deposition

Sharp Reduction of Contact Resistivities by Effective Schottky Barrier Lowering With Silicides as Diffusion Sources

Nanoscale Strain Mapping in Embedded SiGe Devices by Dual Lens Dark Field Electron Holography and Precession Electron Diffraction

Electron energy‐loss near‐edge structure – a tool for the investigation of electronic structure on the nanometre scale

Switching of ferroelectric polarization in epitaxial BaTiO₃ films on silicon without a conducting bottom electrode

Mgr Charles-Louis Gay (1815-1892): Un artiste au service du Christ

Materials and electrical characterization of physical vapor deposited LaxLu1−xO3 thin films on 300 mm silicon

The nitrogen aggregation sequence and the formation of voidites in diamond

Les Dix décisives: 1869-1879

High-K Gate Dielectric Structures by Atomic Layer Deposition for the 32nm and Beyond Nodes

Concevoir et faire vivre un projet d'établissement en bibliothèque

Off-axis electron holography with a dual-lens imaging system and its usefulness in 2-D potential mapping of semiconductor devices

Direct evidence for abrupt postcrystallization germanium precipitation in thin phase-change films of Sb–15at.% Ge

Double spin-torque magnetic tunnel junction devices for last-level cache applications

Calcium Concentration Dependence of the Intergranular Film Thickness in Silicon Nitride

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Quantitative near‐edge structure analysis of diamond‐like carbon in the electron microscope using a two‐window method

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