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Epitaxial layer sheet resistance outside and under ohmic contacts measurements using electrostatic force microscopy

Solid-state electronics, 2001-07, Vol.45 (7), p.1071-1076

2001

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Electron acoustic signal of metallic layers over a semiconductor substrate

Journal of applied physics, 1992-05, Vol.71 (10), p.4678-4683

BRESSE, J. F

1992

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Application aspects of beam injection methods

Materials science & engineering. B, Solid-state materials for advanced technology, 1994-05, Vol.24 (1), p.229-232

Bresse, J.-F.

1994

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Echinocandins Susceptibility Patterns of 2,787 Yeast Isolates: Importance of the Thresholds for the Detection of FKS Mutations

Antimicrobial agents and chemotherapy, 2022-05, Vol.66 (5), p.e0172521-e0172521

2022

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Chemical composition by Auger sputter-depth profiles of GaAs oxide layers formed after chemical or Ar + ion etchings

Applied surface science, 1993-03, Vol.65, p.825-830

Bresse, J.F.

1993

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Use of the scanning electron acoustic microscopy (SEAM) for the study OF III-V compound semiconductors

Scanning, 1990-11, Vol.12 (6), p.308-314

Bresse, J.-F.

1990

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III-V compound thin layer characterization by a chemical bevel angle Auger technique

Journal of applied physics, 1986-03, Vol.59 (6), p.2026-2030

BRESSE, J. F

1986

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Characterization of oval defects in molecular beam epitaxy Ga0.7Al0.3As layers by spatially resolved cathodoluminescence

Applied physics letters, 1988-01, Vol.52 (3), p.224-226

1988

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Comprehensive study of AuMn p-type ohmic contact for GaAs/GaAlAs heterojunction bipolar transistors

Journal of applied physics, 1986-06, Vol.59 (11), p.3783-3786

1986

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Evolution of the electron acoustic signal as function of doping level in III-V semiconductors

Journal of applied physics, 1988-07, Vol.64 (1), p.98-102

1988

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Analysis of surface-induced degradation of GaAs power MESFET's

IEEE electron device letters, 1985-04, Vol.6 (4), p.192-194

1985

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IEEE_Xplore

Be incorporation in heavily doped molecular beam epitaxy grown GaAs: evidence of nonradiative behavior by cathodoluminescence and electron acoustic measurements

Applied physics letters, 1987-07, Vol.51 (3), p.183-185

1987

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Thermally stable low resistance ohmic contacts to n-type gallium arsenide : magnetron cathodic sputter-deposited NiInW contacts

Applied physics letters, 1991-06, Vol.58 (24), p.2773-2775

1991

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Reliability of the structure Au/Cr/Au-Ge/Ni/GaAs in low-noise dual gate GaAs FET

Microelectronics and reliability, 1985, Vol.25 (3), p.411-424

BRESSE, J.-F

1985

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InGaAsP superlattices grown by liquid-phase epitaxy

Journal of applied physics, 1986-06, Vol.59 (12), p.4068-4072

1986

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Molybdenum germanide ohmic contact to n-GaAs

Electronics letters, 1987, Vol.23 (1), p.17-18

1987

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Low damage dry etching of III–V materials for heterojunction bipolar transistor applications using a chlorinated inductively coupled plasma

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 1999-07, Vol.17 (4), p.1174-1181

1999

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Characterization of AlGaAs/GaAs heterojunction bipolar transistors and circuits by localized filtered low-temperature cathodoluminescence

Journal of applied physics, 1989-09, Vol.66 (6), p.2603-2607

1989

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Use of scanning electron acoustic microscopy for the analysis of III–V compound devices

Materials science & engineering. A, Structural materials : properties, microstructure and processing, 1989-12, Vol.122 (1), p.53-56

Bresse, J.F.

1989

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Reliability of the structure Au/Cr/Au-Ge/Ni/GaAs in lownoise dual gate GaAs FET

Microelectronics and reliability, 1985, Vol.25 (3), p.411-424

Bresse, J.-F.

1985

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Contact potential difference of Au and GaInAs by electrostatic force microscopy

Mikrochimica acta (1966), 1999-05, Vol.132 (2-4), p.449-455

Bresse, J F

1999

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Characterization of Au-n-InP Schottky diodes by EBIC

Physica status solidi. A, Applied research, 1986-04, Vol.94 (2), p.713-718

1986

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Scanning auger microscopy for the characterization of very thin epitaxial layers in III–V compounds

Surface science, 1986-03, Vol.168 (1), p.810-815

Bresse, J.F.

1986

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Study of silicon-doped AlxGayIn1-x-yAs quaternary layers by localized cathodoluminescence and electron acoustic microscopy

Journal of applied physics, 1987, Vol.62 (10), p.4174-4177

1987

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Reproducible low-resistivity AuMn ohmic contact for p-type GaAs

Electronics letters, 1985-07, Vol.21 (14), p.614-615

1985

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Epitaxial layer sheet resistance outside and under ohmic contacts measurements using electrostatic force microscopy

Electron acoustic signal of metallic layers over a semiconductor substrate

Application aspects of beam injection methods

Echinocandins Susceptibility Patterns of 2,787 Yeast Isolates: Importance of the Thresholds for the Detection of FKS Mutations

Chemical composition by Auger sputter-depth profiles of GaAs oxide layers formed after chemical or Ar + ion etchings

Use of the scanning electron acoustic microscopy (SEAM) for the study OF III-V compound semiconductors

III-V compound thin layer characterization by a chemical bevel angle Auger technique

Characterization of oval defects in molecular beam epitaxy Ga0.7Al0.3As layers by spatially resolved cathodoluminescence

Comprehensive study of AuMn p-type ohmic contact for GaAs/GaAlAs heterojunction bipolar transistors

Evolution of the electron acoustic signal as function of doping level in III-V semiconductors

Analysis of surface-induced degradation of GaAs power MESFET's

Be incorporation in heavily doped molecular beam epitaxy grown GaAs: evidence of nonradiative behavior by cathodoluminescence and electron acoustic measurements

Thermally stable low resistance ohmic contacts to n-type gallium arsenide : magnetron cathodic sputter-deposited NiInW contacts

Reliability of the structure Au/Cr/Au-Ge/Ni/GaAs in low-noise dual gate GaAs FET

InGaAsP superlattices grown by liquid-phase epitaxy

Molybdenum germanide ohmic contact to n-GaAs

Low damage dry etching of III–V materials for heterojunction bipolar transistor applications using a chlorinated inductively coupled plasma

Characterization of AlGaAs/GaAs heterojunction bipolar transistors and circuits by localized filtered low-temperature cathodoluminescence

Use of scanning electron acoustic microscopy for the analysis of III–V compound devices

Reliability of the structure Au/Cr/Au-Ge/Ni/GaAs in lownoise dual gate GaAs FET

Contact potential difference of Au and GaInAs by electrostatic force microscopy

Characterization of Au-n-InP Schottky diodes by EBIC

Scanning auger microscopy for the characterization of very thin epitaxial layers in III–V compounds

Study of silicon-doped AlxGayIn1-x-yAs quaternary layers by localized cathodoluminescence and electron acoustic microscopy

Reproducible low-resistivity AuMn ohmic contact for p-type GaAs

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