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Lattice-matched AlInN in the initial stage of growth

Applied physics letters, 2014-04, Vol.104 (16)

2014

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Strong evidence for diffusion of point defects in GaInN/GaN quantum well structures

AIP advances, 2024-04, Vol.14 (4), p.045122-045122-6

2024

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Auger recombination in GaInN/GaN quantum well laser structures

Applied physics letters, 2011-07, Vol.99 (3), p.031106-031106-3

2011

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Indium incorporation into InGaN: The role of the adlayer

Journal of crystal growth, 2017-04, Vol.464, p.112-118

2017

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Growth kinetics and island evolution during double-pulsed molecular beam epitaxy of InN

Journal of applied physics, 2016-06, Vol.119 (23)

2016

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Non- and semipolar AlInN one-dimensionally lattice-matched to GaN for realization of relaxed buffer layers for strain engineering in optically active GaN-based devices

Physica Status Solidi. B: Basic Solid State Physics, 2016-01, Vol.253 (1), p.84-92

2016

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Growth and characterization of InGaN by RF-MBE

Journal of crystal growth, 2011-05, Vol.323 (1), p.72-75

2011

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Highly efficient light emission from stacking faults intersecting nonpolar GaInN quantum wells

Applied physics letters, 2011-07, Vol.99 (1), p.011901-011901-3

2011

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Indium incorporation processes investigated by pulsed and continuous growth of ultrathin InGaN quantum wells

Journal of crystal growth, 2015-03, Vol.414, p.49-55

2015

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Dielectric function and bowing parameters of InGaN alloys

physica status solidi (b), 2012-03, Vol.249 (3), p.485-488

2012

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The Art of Modeling Mechanical Systems

1st ed. 2017 edition., 2016

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Analysis of indium incorporation in non- and semipolar GaInN QW structures: comparing x-ray diffraction and optical properties

Semiconductor science and technology, 2012-02, Vol.27 (2), p.024013

2012

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X-ray composition analysis of nonpolar GaInN/GaN multiple quantum well structures

Physica Status Solidi (b), 2011-03, Vol.248 (3), p.616-621

2011

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Optimizing the growth process of the active zone in GaN based laser structures for the long wavelength region

Journal of crystal growth, 2013-05, Vol.370, p.105-108

2013

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Magnetization measurements on frozen ferrofluids: an attempt to separate interaction and anisotropy influences

Journal of physics. Condensed matter, 2006-05, Vol.18 (20), p.4921-4934

2006

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Scanning near-field luminescence microscopy of green light emitting GaInN/GaN quantum wells grown on c-plane sapphire and on c-plane bulk GaN

Physica status solidi. C, 2011-05, Vol.8 (5), p.1556-1559

2011

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Large internal quantum efficiency of In-free UV-emitting GaN∕AlGaN quantum-well structures

Applied physics letters, 2006-05, Vol.88 (19)

2006

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Growth of the active zone in nitride based long wavelength laser structures

Journal of crystal growth, 2011-01, Vol.315 (1), p.250-253

2011

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Optimizing the internal quantum efficiency of GaInN SQW structures for green light emitters

Physica status solidi. C, 2006-06, Vol.3 (6), p.1966-1969

2006

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Properties of Mn-doped ZnO nanopowder

Applied physics. A, Materials science & processing, 2008-06, Vol.91 (3), p.375-378

2008

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Mechanism of thermal degradation in GaInN/GaN quantum wells

Physica status solidi. C, 2009-06, Vol.6 (S2), p.S594-S597

2009

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Growth of InxGa1-xN/GaN QW structures with high indium concentration on c-plane and m-plane surfaces by MOVPE

Journal of crystal growth, 2008-11, Vol.310 (23), p.4987-4991

2008

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Anti-localization suppresses non-radiative recombination in GaInN/GaN quantum wells

Philosophical magazine (Abingdon, England), 2007-01, Vol.87 (13), p.2041-2065

2007

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High quality, high efficiency and ultrahigh In-content InGaN QWs - the problem of thermal stability

Physica status solidi. C, 2008-05, Vol.5 (6), p.1662-1664

2008

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Aluminum incorporation in AlxGa1-xN-layers and implications for growth optimization

Journal of crystal growth, 2007, Vol.298, p.361-366

2007

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Lattice-matched AlInN in the initial stage of growth

Strong evidence for diffusion of point defects in GaInN/GaN quantum well structures

Auger recombination in GaInN/GaN quantum well laser structures

Indium incorporation into InGaN: The role of the adlayer

Growth kinetics and island evolution during double-pulsed molecular beam epitaxy of InN

Non- and semipolar AlInN one-dimensionally lattice-matched to GaN for realization of relaxed buffer layers for strain engineering in optically active GaN-based devices

Growth and characterization of InGaN by RF-MBE

Highly efficient light emission from stacking faults intersecting nonpolar GaInN quantum wells

Indium incorporation processes investigated by pulsed and continuous growth of ultrathin InGaN quantum wells

Dielectric function and bowing parameters of InGaN alloys

The Art of Modeling Mechanical Systems

Analysis of indium incorporation in non- and semipolar GaInN QW structures: comparing x-ray diffraction and optical properties

X-ray composition analysis of nonpolar GaInN/GaN multiple quantum well structures

Optimizing the growth process of the active zone in GaN based laser structures for the long wavelength region

Magnetization measurements on frozen ferrofluids: an attempt to separate interaction and anisotropy influences

Scanning near-field luminescence microscopy of green light emitting GaInN/GaN quantum wells grown on c-plane sapphire and on c-plane bulk GaN

Large internal quantum efficiency of In-free UV-emitting GaN∕AlGaN quantum-well structures

Growth of the active zone in nitride based long wavelength laser structures

Optimizing the internal quantum efficiency of GaInN SQW structures for green light emitters

Properties of Mn-doped ZnO nanopowder

Mechanism of thermal degradation in GaInN/GaN quantum wells

Growth of InxGa1-xN/GaN QW structures with high indium concentration on c-plane and m-plane surfaces by MOVPE

Anti-localization suppresses non-radiative recombination in GaInN/GaN quantum wells

High quality, high efficiency and ultrahigh In-content InGaN QWs - the problem of thermal stability

Aluminum incorporation in AlxGa1-xN-layers and implications for growth optimization

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