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Maternal insulin resistance, triglycerides and cord blood insulin in relation to post-natal weight trajectories and body composition in the offspring up to 2 years

Diabetic medicine, 2013-12, Vol.30 (12), p.1500-1507

2013

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Effect of dietary intervention to reduce the n-6/n-3 fatty acid ratio on maternal and fetal fatty acid profile and its relation to offspring growth and body composition at 1 year of age

European journal of clinical nutrition, 2013-03, Vol.67 (3), p.282-288

2013

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Genetic diversity and similarity of pear (Pyrus communis L.) cultivars in Central Europe revealed by SSR markers

Genetic resources and crop evolution, 2020-10, Vol.67 (7), p.1755-1763

2020

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Carrier transport in green AlInGaN based structures on c-plane substrates

Applied physics letters, 2013-06, Vol.102 (23)

2013

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Comparison of degradation mechanisms of blue-violet laser diodes grown on SiC and GaN substrates

Physica status solidi. A, Applications and materials science, 2006-05, Vol.203 (7), p.1797-1801

2006

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Gain analysis of blue nitride-based lasers by small signal modulation

Applied physics letters, 2010-03, Vol.96 (13), p.131105-131105-3

2010

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Microscopic investigation of InGaN/GaN heterostructure laser diode degradation using Kelvin probe force microscopy

Journal of physics. D, Applied physics, 2008-07, Vol.41 (13), p.135115-135115 (5)

2008

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Development of AlInGaN based blue-violet lasers on GaN and SiC substrates

Physica status solidi. A, Applications and materials science, 2006-05, Vol.203 (7), p.1792-1796

2006

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Influence of an in situ-deposited SiNx intermediate layer inside GaN and AlGaN layers on SiC substrates

Journal of crystal growth, 2006-03, Vol.289 (1), p.6-13

2006

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Sepsis-assoziierte ausgeprägte reversible Leukoenzephalopathie bei chronischer Alkoholabhängigkeit

Aktuelle Neurologie, 2005, Vol.32 (S 4)

2005

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Influence of an in situ-deposited intermediate layer inside GaN and AlGaN layers on SiC substrates

Journal of crystal growth, 2006-03, Vol.289 (1), p.6-13

2006

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Influence of an in situ-deposited SiN x intermediate layer inside GaN and AlGaN layers on SiC substrates

Journal of crystal growth, 2006, Vol.289 (1), p.6-13

2006

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Defect-related recombination in InGaN-lasers

Physica status solidi. C, 2008-05, Vol.5 (6), p.2192-2194

2008

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TEM Investigation on Dislocation Density Reduction by In Situ Deposited SiN Intermediate Layers in MOVPE Grown AlGaNlGaN Heterostructures on Sic and A1203 Substrates

Microscopy and microanalysis, 2003-09, Vol.9 (S03), p.70-71

2003

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Optical gain and saturation in nitride-based laser structures

Applied physics letters, 2001-09, Vol.79 (12), p.1763-1765

2001

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TEM Investigation on Dislocation Density Reduction by In Situ Deposited SiN Intermediate Layers in MOVPE Grown AlGaNlGaN Heterostructures on Sic and A1 2 0 3 Substrates

Microscopy and microanalysis, 2003-09, Vol.9 (S03), p.70-71

2003

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Influence of the barrier height on carrier recombination and transparency density in GaN-based laser structures

Applied physics letters, 2002-02, Vol.80 (5), p.755-757

2002

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Laterally Coupled InGaN/GaN DFB Laser Diodes

Physica status solidi. A, Applied research, 2002-08, Vol.192 (2), p.301-307

2002

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First European GaN-Based Violet Laser Diode

Physica status solidi. A, Applied research, 2000-07, Vol.180 (1), p.177-182

2000

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Influence of the Layer Design on the Far Field Pattern in GaN Based Laser Structures

Physica status solidi. A, Applied research, 2002-12, Vol.194 (2), p.414-418

2002

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Comparative study between laser performance and carrier lifetime of 400 nm emitting GaInN/GaN laser diodes

Physica status solidi. C, 2003-12 (7), p.2304-2308

2003

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Correlation of Barrier Height and Nonradiative Carrier Recombination and the Consequences for Optical Gain in GaN Based Laser Structures

Physica status solidi. A, Applied research, 2001-11, Vol.188 (1), p.109-112

2001

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Preparation structural and magnetic properties of electron-doped infinite-layer HTSC Sr1-xNdxCuO2-δ

Journal of alloys and compounds, 1993-05, Vol.195, p.367-370

1993

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Preparation, structural and magnetic properties of electron-doped infinite-layer HTSC Sr 1−xNd xCuO 2−δ

Journal of alloys and compounds, 1993, Vol.195, p.367-370

1993

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Influence of the Transverse and Lateral Waveguide on the Far Field Pattern in GaN Based Laser Structures

Physica status solidi. A, Applied research, 2001-11, Vol.188 (1), p.65-68

2001

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Maternal insulin resistance, triglycerides and cord blood insulin in relation to post-natal weight trajectories and body composition in the offspring up to 2 years

Effect of dietary intervention to reduce the n-6/n-3 fatty acid ratio on maternal and fetal fatty acid profile and its relation to offspring growth and body composition at 1 year of age

Genetic diversity and similarity of pear (Pyrus communis L.) cultivars in Central Europe revealed by SSR markers

Carrier transport in green AlInGaN based structures on c-plane substrates

Comparison of degradation mechanisms of blue-violet laser diodes grown on SiC and GaN substrates

Gain analysis of blue nitride-based lasers by small signal modulation

Microscopic investigation of InGaN/GaN heterostructure laser diode degradation using Kelvin probe force microscopy

Development of AlInGaN based blue-violet lasers on GaN and SiC substrates

Influence of an in situ-deposited SiNx intermediate layer inside GaN and AlGaN layers on SiC substrates

Sepsis-assoziierte ausgeprägte reversible Leukoenzephalopathie bei chronischer Alkoholabhängigkeit

Influence of an in situ-deposited intermediate layer inside GaN and AlGaN layers on SiC substrates

Influence of an in situ-deposited SiN x intermediate layer inside GaN and AlGaN layers on SiC substrates

Defect-related recombination in InGaN-lasers

TEM Investigation on Dislocation Density Reduction by In Situ Deposited SiN Intermediate Layers in MOVPE Grown AlGaNlGaN Heterostructures on Sic and A1203 Substrates

Optical gain and saturation in nitride-based laser structures

TEM Investigation on Dislocation Density Reduction by In Situ Deposited SiN Intermediate Layers in MOVPE Grown AlGaNlGaN Heterostructures on Sic and A1 2 0 3 Substrates

Influence of the barrier height on carrier recombination and transparency density in GaN-based laser structures

Laterally Coupled InGaN/GaN DFB Laser Diodes

First European GaN-Based Violet Laser Diode

Influence of the Layer Design on the Far Field Pattern in GaN Based Laser Structures

Comparative study between laser performance and carrier lifetime of 400 nm emitting GaInN/GaN laser diodes

Correlation of Barrier Height and Nonradiative Carrier Recombination and the Consequences for Optical Gain in GaN Based Laser Structures

Preparation structural and magnetic properties of electron-doped infinite-layer HTSC Sr1-xNdxCuO2-δ

Preparation, structural and magnetic properties of electron-doped infinite-layer HTSC Sr 1−xNd xCuO 2−δ

Influence of the Transverse and Lateral Waveguide on the Far Field Pattern in GaN Based Laser Structures

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