UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

Resonant tunnelling diodes based on graphene/h-BN heterostructure

Journal of physics. D, Applied physics, 2012-08, Vol.45 (32), p.325104-1-5

2012

Volltextzugriff (PDF)

Impact of the Radial Ionization Profile on SEE Prediction for SOI Transistors and SRAMs Beyond the 32-nm Technological Node

IEEE transactions on nuclear science, 2011-06, Vol.58 (3), p.840-847

2011

Volltextzugriff (PDF)

Wave-function engineering and absorption spectra in Si0.16Ge0.84/Ge0.94Sn0.06/Si0.16Ge0.84 strained on relaxed Si0.10Ge0.90 type I quantum well

Journal of applied physics, 2014-01, Vol.115 (3)

2014

Volltextzugriff (PDF)

Suppression of the orientation effects on bandgap in graphene nanoribbons in the presence of edge disorder

Applied physics letters, 2008-01, Vol.92 (4), p.042108-042108-3

2008

Volltextzugriff (PDF)

On the Ability of the Particle Monte Carlo Technique to Include Quantum Effects in Nano-MOSFET Simulation

IEEE transactions on electron devices, 2007-09, Vol.54 (9), p.2232-2242

2007

Volltextzugriff (PDF)

Electronic transport and spin-polarization effects of relativisticlike particles in mesoscopic graphene structures

Journal of applied physics, 2008-09, Vol.104 (6), p.063708-063708-7

2008

Volltextzugriff (PDF)

Performance evaluation of high-detectivity p-i-n infrared photodetector based on compressively-strained Ge0.964Sn0.036 Ge multiple quantum wells by quantum modelling

Semiconductor science and technology, 2015-08, Vol.30 (8)

2015

Volltextzugriff (PDF)

Graphene nanomesh-based devices exhibiting a strong negative differential conductance effect

Nanotechnology, 2012-02, Vol.23 (6), p.065201-1-7

2012

Volltextzugriff (PDF)

Resonant tunneling structures based on epitaxial graphene on SiC

Semiconductor science and technology, 2011-12, Vol.26 (12), p.125012

2011

Volltextzugriff (PDF)

On the ballistic transport in nanometer-scaled DG MOSFETs

IEEE transactions on electron devices, 2004-07, Vol.51 (7), p.1148-1155

2004

Volltextzugriff (PDF)

Controllable spin-dependent transport in armchair graphene nanoribbon structures

Journal of applied physics, 2009-09, Vol.106 (5), p.053710-053710-7

2009

Volltextzugriff (PDF)

Resonant tunneling and negative transconductance in single barrier bilayer graphene structure

Applied physics letters, 2009-12, Vol.95 (23), p.232115-232115-3

2009

Volltextzugriff (PDF)

Temperature and size dependences of electrostatics and mobility in gate-all-around MOSFET devices

Semiconductor science and technology, 2011-02, Vol.26 (2), p.025001

2011

Volltextzugriff (PDF)

Full Band Monte Carlo simulation of phonon transfer at interfaces

2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2020, p.27-30

2020

Volltextzugriff (PDF)

TCAD simulation methodology of total ionizing dose effects for PDSOI transistor with a hump characteristic

Solid-state electronics, 2024-01, Vol.211, p.108813, Article 108813

2024

Volltextzugriff (PDF)

Graphene nanomesh-based devices exhibiting a strong negative differential conductance effect

Nanotechnology, 2012-07, Vol.23 (28), p.289502

2012

Volltextzugriff (PDF)

The conduction gap in double gate bilayer graphene structures

Journal of physics. Condensed matter, 2010-03, Vol.22 (11), p.115304-115304

2010

Volltextzugriff (PDF)

Multi sub-band Monte Carlo simulation of an ultra-thin double gate MOSFET with 2D electron gas

Semiconductor science and technology, 2006-04, Vol.21 (4), p.L29-L31

2006

Volltextzugriff (PDF)

Band engineering and absorption spectra in compressively strained Ge0.92Sn0.08/Ge (001) double quantum well for infrared photodetection

Physica status solidi. C, 2014-11, Vol.11 (11-12), p.1561-1565

2014

Volltextzugriff (PDF)

Comparison of multiple-gate MOSFET architectures using Monte Carlo simulation

Solid-state electronics, 2006, Vol.50 (1), p.94-101

2006

Volltextzugriff (PDF)

A Study of Quantum Transport in End-of-Roadmap DG-MOSFETs Using a Fully Self-Consistent Wigner Monte Carlo Approach

IEEE transactions on nanotechnology, 2006-11, Vol.5 (6), p.737-744

2006

Volltextzugriff (PDF)

A Pearson Effective Potential for Monte Carlo Simulation of Quantum Confinement Effects in nMOSFETs

IEEE transactions on electron devices, 2008-12, Vol.55 (12), p.3450-3458

2008

Volltextzugriff (PDF)

Material level analytical model of total ionizing dose induced DC characteristics shift for FDSOI IC design

Microelectronics and reliability, 2023-12, Vol.151, p.115273, Article 115273

2023

Volltextzugriff (PDF)

Electron dynamics in silicon nanowire using a Monte-Carlo method

Journal of physics. Conference series, 2009-11, Vol.193 (1), p.012126, Article 012126

2009

Volltextzugriff (PDF)

An Application-Driven Improvement of the Drift-Diffusion Model for Carrier Transport in Decanano-Scaled CMOS Devices

IEEE transactions on electron devices, 2008-11, Vol.55 (11), p.3227-3235

2008

Volltextzugriff (PDF)

1 – 25 von 347

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(281)
Mit Volltextzugriff
(330)

Publikationsform

Sprache

Englisch
(318)
Französisch
(25)

Erscheinungsjahr

n.n

Thema

Science & Technology
(181)
Physical Sciences
(149)
Physics
(148)
Technology
(109)
Materials Science
(89)
Chemical Sciences
(82)
Physics, Applied
(72)
Chemistry
(64)
Engineering
(60)
Engineering, Electrical & Electronic
(59)
Materials Science, Multidisciplinary
(52)
Science & Technology - Other Topics
(46)
Condensed Matter
(44)
Chemistry, Physical
(43)
Nanoscience & Nanotechnology
(40)
Physics, Condensed Matter
(40)
Engineering Sciences
(39)
Exact Sciences And Technology
(37)
Microelectronics
(34)
Micro And Nanotechnologies
(30)

15 weitere anzeigen...

Weniger anzeigen...

Neu hinzugefügt

... seit 7 Tagen
(1)

Menü

Weitere Dienste

Einstellungen

Resonant tunnelling diodes based on graphene/h-BN heterostructure

Impact of the Radial Ionization Profile on SEE Prediction for SOI Transistors and SRAMs Beyond the 32-nm Technological Node

Wave-function engineering and absorption spectra in Si0.16Ge0.84/Ge0.94Sn0.06/Si0.16Ge0.84 strained on relaxed Si0.10Ge0.90 type I quantum well

Suppression of the orientation effects on bandgap in graphene nanoribbons in the presence of edge disorder

On the Ability of the Particle Monte Carlo Technique to Include Quantum Effects in Nano-MOSFET Simulation

Electronic transport and spin-polarization effects of relativisticlike particles in mesoscopic graphene structures

Performance evaluation of high-detectivity p-i-n infrared photodetector based on compressively-strained Ge0.964Sn0.036 Ge multiple quantum wells by quantum modelling

Graphene nanomesh-based devices exhibiting a strong negative differential conductance effect

Resonant tunneling structures based on epitaxial graphene on SiC

On the ballistic transport in nanometer-scaled DG MOSFETs

Controllable spin-dependent transport in armchair graphene nanoribbon structures

Resonant tunneling and negative transconductance in single barrier bilayer graphene structure

Temperature and size dependences of electrostatics and mobility in gate-all-around MOSFET devices

Full Band Monte Carlo simulation of phonon transfer at interfaces

TCAD simulation methodology of total ionizing dose effects for PDSOI transistor with a hump characteristic

Graphene nanomesh-based devices exhibiting a strong negative differential conductance effect

The conduction gap in double gate bilayer graphene structures

Multi sub-band Monte Carlo simulation of an ultra-thin double gate MOSFET with 2D electron gas

Band engineering and absorption spectra in compressively strained Ge0.92Sn0.08/Ge (001) double quantum well for infrared photodetection

Comparison of multiple-gate MOSFET architectures using Monte Carlo simulation

A Study of Quantum Transport in End-of-Roadmap DG-MOSFETs Using a Fully Self-Consistent Wigner Monte Carlo Approach

A Pearson Effective Potential for Monte Carlo Simulation of Quantum Confinement Effects in nMOSFETs

Material level analytical model of total ionizing dose induced DC characteristics shift for FDSOI IC design

Electron dynamics in silicon nanowire using a Monte-Carlo method

An Application-Driven Improvement of the Drift-Diffusion Model for Carrier Transport in Decanano-Scaled CMOS Devices

Suchergebnisse filtern