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Nitride-based semiconductors for blue and green light-emitting devices

Nature (London), 1997-03, Vol.386 (6623), p.351-359

1997

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Performance and Breakdown Characteristics of Irradiated Vertical Power GaN P-i-N Diodes

IEEE transactions on nuclear science, 2015-12, Vol.62 (6), p.2912-2918

2015

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Fabrication of thin-film InGaN light-emitting diode membranes by laser lift-off

Applied physics letters, 1999-09, Vol.75 (10), p.1360-1362

1999

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Determination of the piezoelectric field in InGaN quantum wells

Applied physics letters, 2005-03, Vol.86 (13), p.131108-131108-3

2005

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Spatial distribution of the luminescence in GaN thin films

Applied physics letters, 1996-01, Vol.68 (1), p.57-59

1996

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Phase separation in InGaN/GaN multiple quantum wells

Applied physics letters, 1998-04, Vol.72 (14), p.1730-1732

1998

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Activation of acceptors in Mg-doped GaN grown by metalorganic chemical vapor deposition

Applied physics letters, 1996-01, Vol.68 (5), p.667-669

1996

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Local vibrational modes of the Mg–H acceptor complex in GaN

Applied physics letters, 1996-12, Vol.69 (24), p.3725-3727

1996

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Determination of lattice polarity for growth of GaN bulk single crystals and epitaxial layers

Applied physics letters, 1996-07, Vol.69 (3), p.337-339

1996

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Hydrogen-related, deeply bound excitons in Mg-doped GaN films

Applied physics letters, 2013-08, Vol.103 (8)

2013

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Mapping electrostatic potential across an AlGaN/InGaN/AlGaN diode by electron holography

Applied physics letters, 2000-05, Vol.76 (21), p.3055-3057

2000

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Deep level defects in Mg-doped, p -type GaN grown by metalorganic chemical vapor deposition

Applied physics letters, 1996-06, Vol.68 (24), p.3470-3472

1996

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Polycrystalline nitride semiconductor light-emitting diodes fabricated on quartz substrates

Applied physics letters, 2000-04, Vol.76 (16), p.2182-2184

2000

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Structural and optical properties of pseudomorphic InxGa1−xN alloys

Applied physics letters, 1998-09, Vol.73 (13), p.1757-1759

1998

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Homoepitaxy of GaN on polished bulk single crystals by metalorganic chemical vapor deposition

Applied physics letters, 1996-02, Vol.68 (7), p.917-919

1996

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Phase separation in InGaN multiple quantum wells annealed at high nitrogen pressures

Applied physics letters, 1999-12, Vol.75 (25), p.3950-3952

1999

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Drift leakage current in AlGaInP quantum-well lasers

IEEE journal of quantum electronics, 1993-05, Vol.29 (5), p.1337-1343

1993

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Misalignment-tolerant surface-normal low-voltage modulator for optical interconnects

IEEE journal of selected topics in quantum electronics, 2005-03, Vol.11 (2), p.338-342

2005

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Design and performance of asymmetric waveguide nitride laser diodes

IEEE journal of quantum electronics, 2000-02, Vol.36 (2), p.184-191

2000

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Spatially and spectrally resolved measurement of optical loss in InGaN laser structures

Journal of crystal growth, 2001-09, Vol.230 (3), p.517-521

2001

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High temperature continuous-wave operation of 1.3- and 1.55-μm VCSELs with InP/Air-Gap DBRs

IEEE journal of selected topics in quantum electronics, 2003-09, Vol.9 (5), p.1415-1421

2003

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Metastability of Oxygen Donors in AlGaN

Physical review letters, 1998-05, Vol.80 (18), p.4008-4011

1998

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Corrections to "High Performance Quantum Cascade Lasers Grown by Metal-Organic Vapor Phase Epitaxy and Their Applications to Trace Gas Sensing" [Nov 08 3534-3555]

Journal of lightwave technology, 2010-03, Vol.28 (6), p.984-984

2010

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Terabus: Terabit/Second-Class Card-Level Optical Interconnect Technologies

IEEE journal of selected topics in quantum electronics, 2006-09, Vol.12 (5), p.1032-1044

2006

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Hydrogen passivation of Mg acceptors in GaN grown by metalorganic chemical vapor deposition

Applied physics letters, 1995-10, Vol.67 (18), p.2666-2668

1995

Volltextzugriff (PDF)

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Nitride-based semiconductors for blue and green light-emitting devices

Performance and Breakdown Characteristics of Irradiated Vertical Power GaN P-i-N Diodes

Fabrication of thin-film InGaN light-emitting diode membranes by laser lift-off

Determination of the piezoelectric field in InGaN quantum wells

Spatial distribution of the luminescence in GaN thin films

Phase separation in InGaN/GaN multiple quantum wells

Activation of acceptors in Mg-doped GaN grown by metalorganic chemical vapor deposition

Local vibrational modes of the Mg–H acceptor complex in GaN

Determination of lattice polarity for growth of GaN bulk single crystals and epitaxial layers

Hydrogen-related, deeply bound excitons in Mg-doped GaN films

Mapping electrostatic potential across an AlGaN/InGaN/AlGaN diode by electron holography

Deep level defects in Mg-doped, p -type GaN grown by metalorganic chemical vapor deposition

Polycrystalline nitride semiconductor light-emitting diodes fabricated on quartz substrates

Structural and optical properties of pseudomorphic InxGa1−xN alloys

Homoepitaxy of GaN on polished bulk single crystals by metalorganic chemical vapor deposition

Phase separation in InGaN multiple quantum wells annealed at high nitrogen pressures

Drift leakage current in AlGaInP quantum-well lasers

Misalignment-tolerant surface-normal low-voltage modulator for optical interconnects

Design and performance of asymmetric waveguide nitride laser diodes

Spatially and spectrally resolved measurement of optical loss in InGaN laser structures

High temperature continuous-wave operation of 1.3- and 1.55-μm VCSELs with InP/Air-Gap DBRs

Metastability of Oxygen Donors in AlGaN

Corrections to "High Performance Quantum Cascade Lasers Grown by Metal-Organic Vapor Phase Epitaxy and Their Applications to Trace Gas Sensing" [Nov 08 3534-3555]

Terabus: Terabit/Second-Class Card-Level Optical Interconnect Technologies

Hydrogen passivation of Mg acceptors in GaN grown by metalorganic chemical vapor deposition

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