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Structure−Activity Relationship for the Addition of OH to (Poly)alkenes: Site-Specific and Total Rate Constants

The journal of physical chemistry. A, Molecules, spectroscopy, kinetics, environment, & general theory, 2007-03, Vol.111 (9), p.1618-1631

2007

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Investigation of etching and deposition processes of Cl 2 /O 2 /Ar inductively coupled plasmas on silicon by means of plasma–surface simulations and experiments

Journal of physics. D, Applied physics, 2009-05, Vol.42 (9), p.95204

2009

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Simulation of an Ar/Cl 2 inductively coupled plasma: study of the effect of bias, power and pressure and comparison with experiments

Journal of physics. D, Applied physics, 2008-03, Vol.41 (6), p.65207

2008

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Modeling Cl2/O2/Ar inductively coupled plasmas used for silicon etching: effects of SiO2 chamber wall coating

Plasma sources science & technology, 2011-08, Vol.20 (4), p.045012

2011

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A dc-pulsed capacitively coupled planar Langmuir probe for plasma process diagnostics and monitoring

Plasma sources science & technology, 2012-12, Vol.21 (6), p.65004-1-8

2012

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Simulation of an Ar/Cl2 inductively coupled plasma: study of the effect of bias, power and pressure and comparison with experiments

Journal of physics. D, Applied physics, 2008-03, Vol.41 (6), p.065207-065207 (14)

2008

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Dry Etching of Mo based layers and its interdependence with a poly-Si/MoOxNy/TiN/HfO2 gate stack

Microelectronic engineering, 2013-05, Vol.105, p.60-64

2013

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Dry etching fin process for SOI finFET manufacturing: Transition from 32 to 22 nm node on a 6T-SRAM cell

Microelectronic engineering, 2011-09, Vol.88 (9), p.2871-2878

2011

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Temperature and RF Current Sensor Wafers for Plasma Etching

Journal of the Electrochemical Society, 2012-01, Vol.159 (1), p.H5-H10

2012

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Effect of energetic ions on plasma damage of porous SiCOH low-k materials

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2010-05, Vol.28 (3), p.450-459

2010

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SELECTIVE REMOVAL OF HIGH-K GATE DIELECTRICS

Chemical engineering communications, 2009-12, Vol.196 (12), p.1475-1535

2009

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Dry etching process for bulk finFET manufacturing

Microelectronic engineering, 2009, Vol.86 (1), p.96-98

2009

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In-line control of Si loss after post ion implantation strip

Microelectronic engineering, 2010-11, Vol.87 (9), p.1669-1673

2010

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Diffusion of solvents in thin porous films

Colloids and surfaces. A, Physicochemical and engineering aspects, 2007-06, Vol.300 (1), p.111-116

2007

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Dry etching fin process for SOI finFET manufacturing: Transition from 32 to 22nm node on a 6T-SRAM cell

Microelectronic engineering, 2011-09, Vol.88 (9), p.2871-2878

2011

Volltextzugriff (PDF)

Investigation of etching and deposition processes of Cl2/O2/Ar inductively coupled plasmas on silicon by means of plasma–surface simulations and experiments

Journal of physics. D, Applied physics, 2009-05, Vol.42 (9), p.095204

2009

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High aspect ratio via etch development for Cu nails in 3-D-stacked ICs

Thin solid films, 2008-04, Vol.516 (11), p.3502-3506

2008

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Minimizing plasma damage and in situ sealing of ultralow- k dielectric films by using oxygen free fluorocarbon plasmas

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2005-09, Vol.23 (5), p.2198-2202

2005

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Spacer defined FinFET: Active area patterning of sub-20 nm fins with high density

Microelectronic engineering, 2007-04, Vol.84 (4), p.609-618

2007

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Integration of SrBi2Ta2O9 thin films for high density ferroelectric random access memory

Journal of applied physics, 2006-09, Vol.100 (5)

2006

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Wet Etch Characteristics of Hafnium Silicate Layers

Journal of the Electrochemical Society, 2006-01, Vol.153 (4), p.F60

2006

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Study on metrology of ERU tuning in TCP reactor, using PVx2 sensor wafer

2010 IEEE/SEMI Advanced Semiconductor Manufacturing Conference (ASMC), 2010, p.34-38

2010

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Highly reliable TaOx ReRAM with centralized filament for 28-nm embedded application

2015 Symposium on VLSI Technology (VLSI Technology), 2015, p.T14-T15

2015

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Process Optimization and Integration of Trimethylsilane-Deposited α-SiC:H and α-SiCO:H Dielectric Thin Films for Damascene Processing

Journal of the Electrochemical Society, 2003-07, Vol.150 (7), p.G404

2003

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Modeling Cl 2 /O 2 /Ar inductively coupled plasmas used for silicon etching: effects of SiO 2 chamber wall coating

Plasma sources science & technology, 2011-08, Vol.20 (4), p.45012

2011

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Structure−Activity Relationship for the Addition of OH to (Poly)alkenes: Site-Specific and Total Rate Constants

Investigation of etching and deposition processes of Cl 2 /O 2 /Ar inductively coupled plasmas on silicon by means of plasma–surface simulations and experiments

Simulation of an Ar/Cl 2 inductively coupled plasma: study of the effect of bias, power and pressure and comparison with experiments

Modeling Cl2/O2/Ar inductively coupled plasmas used for silicon etching: effects of SiO2 chamber wall coating

A dc-pulsed capacitively coupled planar Langmuir probe for plasma process diagnostics and monitoring

Simulation of an Ar/Cl2 inductively coupled plasma: study of the effect of bias, power and pressure and comparison with experiments

Dry Etching of Mo based layers and its interdependence with a poly-Si/MoOxNy/TiN/HfO2 gate stack

Dry etching fin process for SOI finFET manufacturing: Transition from 32 to 22 nm node on a 6T-SRAM cell

Temperature and RF Current Sensor Wafers for Plasma Etching

Effect of energetic ions on plasma damage of porous SiCOH low-k materials

SELECTIVE REMOVAL OF HIGH-K GATE DIELECTRICS

Dry etching process for bulk finFET manufacturing

In-line control of Si loss after post ion implantation strip

Diffusion of solvents in thin porous films

Dry etching fin process for SOI finFET manufacturing: Transition from 32 to 22nm node on a 6T-SRAM cell

Investigation of etching and deposition processes of Cl2/O2/Ar inductively coupled plasmas on silicon by means of plasma–surface simulations and experiments

High aspect ratio via etch development for Cu nails in 3-D-stacked ICs

Minimizing plasma damage and in situ sealing of ultralow- k dielectric films by using oxygen free fluorocarbon plasmas

Spacer defined FinFET: Active area patterning of sub-20 nm fins with high density

Integration of SrBi2Ta2O9 thin films for high density ferroelectric random access memory

Wet Etch Characteristics of Hafnium Silicate Layers

Study on metrology of ERU tuning in TCP reactor, using PVx2 sensor wafer

Highly reliable TaOx ReRAM with centralized filament for 28-nm embedded application

Process Optimization and Integration of Trimethylsilane-Deposited α-SiC:H and α-SiCO:H Dielectric Thin Films for Damascene Processing

Modeling Cl 2 /O 2 /Ar inductively coupled plasmas used for silicon etching: effects of SiO 2 chamber wall coating

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