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MISNAN-a physically based continuous MOSFET model for CAD applications

IEEE transactions on computer-aided design of integrated circuits and systems, 1991-12, Vol.10 (12), p.1512-1529

1991

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A model of charge transport in thermal SiO2 implanted with Si

Solid-state electronics, 1990-07, Vol.33 (7), p.893-905

1990

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Emotional reactions to research participation and the relationship to understanding of informed consent disclosure

Social work research, 2003-12, Vol.27 (4), p.242-251

2003

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A two-dimensional analytical threshold voltage model for MOSFET's with arbitrarily doped substrates

IEEE electron device letters, 1986-07, Vol.7 (7), p.401-403

1986

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Service penetration by persons with severe mental illness: how should it be measured?

The journal of behavioral health services & research, 2002-05, Vol.29 (2), p.198-207

2002

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Rechargeable E' centers in silicon-implanted SiO2 films

Journal of applied physics, 1990-06, Vol.67 (12), p.7359-7367

1990

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A comparison of youth referred to psychiatric emergency services: police versus other sources

The journal of the American Academy of Psychiatry and the Law, 2002-01, Vol.30 (1), p.74-80

2002

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Leaving the welfare rolls: the health and mental health status of current and former welfare recipients

Mental health services research, 2001-09, Vol.3 (3), p.119-128

2001

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Automated parameter extraction and modeling of the MOSFET below threshold

IEEE transactions on computer-aided design of integrated circuits and systems, 1988-04, Vol.7 (4), p.484-488

1988

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Children's use of mental health services in different Medicaid insurance plans

The journal of behavioral health services & research, 2003-04, Vol.30 (2), p.228-237

2003

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A one-dimensional DC model for nonrectangular IGFETs

IEEE journal of solid-state circuits, 1983-12, Vol.18 (6), p.778-784

1983

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Valley current density activation energy and effective longitudinal optical phonon energy in triple well asymmetric resonant tunneling diode

Applied physics letters, 1990-08, Vol.57 (6), p.575-577

1990

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Room temperature negative differential resistance in a triple well rectifying resonant tunnelling diode

Electronics letters, 1990-09, Vol.26 (15), p.1163-1164

1990

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Silicon carbide emitter diodes by LPCVD (low-pressure chemical vapour deposition) using di- tert -butylsilane

Canadian journal of physics, 1992-10, Vol.70 (10-11), p.946-948

1992

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Optical absorption studies of Si implanted SiO2

Journal of electronic materials, 1990-02, Vol.19 (2), p.131-138

1990

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Development and Implementation of an Experimental Study of the Effectiveness of Intensive In-Home Crisis Services for Children and Their Families

Journal of emotional and behavioral disorders, 1997-04, Vol.5 (2), p.93-105

1997

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Experimental investigation of N-MOS inversion layers in the electric quantum limit

Journal of electronic materials, 1992-03, Vol.21 (3), p.367-372

1992

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A novel multiple threshold MOSFET structure for A/D and D/A conversion

IEEE journal of solid-state circuits, 1984-10, Vol.19 (5), p.794-802

1984

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Evaluating the efficiency and community safety goals of the Broward County Mental Health Court

Behavioral sciences & the law, 2005-01, Vol.23 (2), p.227-243

2005

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Clinical Outcomes of Defendants in Mental Health Court

Psychiatric services (Washington, D.C.), 2005-07, Vol.56 (7), p.829-834

2005

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A new approach to the theory and modeling of insulated-gate field-effect transistors

IEEE transactions on electron devices, 1977-03, Vol.24 (3), p.241-253

1977

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The Broward Mental Health Court: process, outcomes, and service utilization

International journal of law and psychiatry, 2003, Vol.26 (1), p.55-71

2003

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A two-dimensional analytical solution of the poisson and current continuity equations for the short-channel MOSFET

Solid-state electronics, 1990, Vol.33 (5), p.537-551

1990

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Assessing outcomes in individually-tailored interventions

The Lancet (British edition), 2006-03, Vol.367 (9513), p.801-802

2006

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Determination of a collector junction model for planar bipolar transistors

IEEE transactions on electron devices, 1973-10, Vol.20 (10), p.878-883

1973

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MISNAN-a physically based continuous MOSFET model for CAD applications

A model of charge transport in thermal SiO2 implanted with Si

Emotional reactions to research participation and the relationship to understanding of informed consent disclosure

A two-dimensional analytical threshold voltage model for MOSFET's with arbitrarily doped substrates

Service penetration by persons with severe mental illness: how should it be measured?

Rechargeable E' centers in silicon-implanted SiO2 films

A comparison of youth referred to psychiatric emergency services: police versus other sources

Leaving the welfare rolls: the health and mental health status of current and former welfare recipients

Automated parameter extraction and modeling of the MOSFET below threshold

Children's use of mental health services in different Medicaid insurance plans

A one-dimensional DC model for nonrectangular IGFETs

Valley current density activation energy and effective longitudinal optical phonon energy in triple well asymmetric resonant tunneling diode

Room temperature negative differential resistance in a triple well rectifying resonant tunnelling diode

Silicon carbide emitter diodes by LPCVD (low-pressure chemical vapour deposition) using di- tert -butylsilane

Optical absorption studies of Si implanted SiO2

Development and Implementation of an Experimental Study of the Effectiveness of Intensive In-Home Crisis Services for Children and Their Families

Experimental investigation of N-MOS inversion layers in the electric quantum limit

A novel multiple threshold MOSFET structure for A/D and D/A conversion

Evaluating the efficiency and community safety goals of the Broward County Mental Health Court

Clinical Outcomes of Defendants in Mental Health Court

A new approach to the theory and modeling of insulated-gate field-effect transistors

The Broward Mental Health Court: process, outcomes, and service utilization

A two-dimensional analytical solution of the poisson and current continuity equations for the short-channel MOSFET

Assessing outcomes in individually-tailored interventions

Determination of a collector junction model for planar bipolar transistors

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