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Thermally evaporated Cu2ZnSnS4 solar cells

Applied physics letters, 2010-10, Vol.97 (14)

2010

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Atomic beam deposition of lanthanum- and yttrium-based oxide thin films for gate dielectrics

Applied physics letters, 2000-10, Vol.77 (17), p.2710-2712

2000

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Epitaxial silicon and germanium on buried insulator heterostructures and devices

Applied physics letters, 2003-12, Vol.83 (26), p.5443-5445

2003

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High-quality aluminum oxide gate dielectrics by ultra-high-vacuum reactive atomic-beam deposition

Journal of applied physics, 2001-07, Vol.90 (1), p.512-514

2001

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High temperature stability of Al2O3 dielectrics on Si: Interfacial metal diffusion and mobility degradation

Applied physics letters, 2002-10, Vol.81 (16), p.2956-2958

2002

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Negative differential resistance in ultrathin Ge-on-insulator FETs

Semiconductor science and technology, 2007-01, Vol.22 (1), p.S1-S4

2007

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Interfacial oxide formation from intrinsic oxygen in W–HfO2 gated silicon field-effect transistors

Applied physics letters, 2004-12, Vol.85 (25), p.6230-6232

2004

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Molecular-beam-deposited yttrium-oxide dielectrics in aluminum-gated metal–oxide–semiconductor field-effect transistors: Effective electron mobility

Applied physics letters, 2001-06, Vol.78 (26), p.4169-4171

2001

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Examination of flatband and threshold voltage tuning of HfO2∕TiN field effect transistors by dielectric cap layers

Applied physics letters, 2007-02, Vol.90 (9)

2007

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Interfacial oxide formation and oxygen diffusion in rare earth oxide–silicon epitaxial heterostructures

Applied physics letters, 2002-11, Vol.81 (22), p.4183-4185

2002

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Hall mobility in hafnium oxide based MOSFETs: charge effects

IEEE electron device letters, 2003-11, Vol.24 (11), p.689-691

2003

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Thermal activation energies of Mg in GaN:Mg measured by the Hall effect and admittance spectroscopy

Journal of applied physics, 2000-09, Vol.88 (5), p.2564-2569

2000

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Selective area metalorganic molecular-beam epitaxy of GaN and the growth of luminescent microcolumns on Si/SiO2

Applied physics letters, 1999-07, Vol.75 (4), p.463-465

1999

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Surface lifetimes of Ga and growth behavior on GaN (0001) surfaces during molecular beam epitaxy

Applied physics letters, 1996-11, Vol.69 (19), p.2879-2881

1996

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Hybrid organic–inorganic semiconductor-based light-emitting diodes

Journal of applied physics, 1997-10, Vol.82 (8), p.4126-4128

1997

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Comparison of high vacuum and ultra-high-vacuum tantalum diffusion barrier performance against copper penetration

Journal of applied physics, 1993, Vol.73 (1), p.300-308

1993

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Microstructure of AlGaAs-oxide heterolayers formed by wet oxidation

Applied physics letters, 1996-02, Vol.68 (7), p.906-908

1996

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Recombination in GaAs at the AlAs oxide-GaAs interface

Applied physics letters, 1995-10, Vol.67 (14), p.2022-2024

1995

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Mg in GaN: Incorporation of a volatile species at high temperatures during molecular beam epitaxy

Applied physics letters, 1997-09, Vol.71 (12), p.1685-1687

1997

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Physical and electrical properties of reactive molecular-beam-deposited aluminum nitride in metal-oxide-silicon structures

Journal of applied physics, 2003-04, Vol.93 (7), p.3912-3919

2003

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Electrical characterization of Al2O3 n-channel MOSFETs with aluminum gates

IEEE electron device letters, 2001-10, Vol.22 (10), p.490-492

2001

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Ultraviolet and violet GaN light emitting diodes on silicon

Applied physics letters, 1998-01, Vol.72 (4), p.415-417

1998

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Magnetic and magnetotransport of amorphous U-As films

Journal of applied physics, 1991-11, Vol.70 (10), p.5855-5857

1991

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Determination of band offsets, chemical bonding, and microstructure of the ( Tb x Sc 1 − x ) 2 O 3 / Si system

Journal of applied physics, 2010-07, Vol.108 (2), p.024105-024105-5

2010

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Determination of band offsets, chemical bonding, and microstructure of the (TbxSc1−x)2O3/Si system

Journal of applied physics, 2010-07, Vol.108 (2)

2010

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Thermally evaporated Cu2ZnSnS4 solar cells

Atomic beam deposition of lanthanum- and yttrium-based oxide thin films for gate dielectrics

Epitaxial silicon and germanium on buried insulator heterostructures and devices

High-quality aluminum oxide gate dielectrics by ultra-high-vacuum reactive atomic-beam deposition

High temperature stability of Al2O3 dielectrics on Si: Interfacial metal diffusion and mobility degradation

Negative differential resistance in ultrathin Ge-on-insulator FETs

Interfacial oxide formation from intrinsic oxygen in W–HfO2 gated silicon field-effect transistors

Molecular-beam-deposited yttrium-oxide dielectrics in aluminum-gated metal–oxide–semiconductor field-effect transistors: Effective electron mobility

Examination of flatband and threshold voltage tuning of HfO2∕TiN field effect transistors by dielectric cap layers

Interfacial oxide formation and oxygen diffusion in rare earth oxide–silicon epitaxial heterostructures

Hall mobility in hafnium oxide based MOSFETs: charge effects

Thermal activation energies of Mg in GaN:Mg measured by the Hall effect and admittance spectroscopy

Selective area metalorganic molecular-beam epitaxy of GaN and the growth of luminescent microcolumns on Si/SiO2

Surface lifetimes of Ga and growth behavior on GaN (0001) surfaces during molecular beam epitaxy

Hybrid organic–inorganic semiconductor-based light-emitting diodes

Comparison of high vacuum and ultra-high-vacuum tantalum diffusion barrier performance against copper penetration

Microstructure of AlGaAs-oxide heterolayers formed by wet oxidation

Recombination in GaAs at the AlAs oxide-GaAs interface

Mg in GaN: Incorporation of a volatile species at high temperatures during molecular beam epitaxy

Physical and electrical properties of reactive molecular-beam-deposited aluminum nitride in metal-oxide-silicon structures

Electrical characterization of Al2O3 n-channel MOSFETs with aluminum gates

Ultraviolet and violet GaN light emitting diodes on silicon

Magnetic and magnetotransport of amorphous U-As films

Determination of band offsets, chemical bonding, and microstructure of the ( Tb x Sc 1 − x ) 2 O 3 / Si system

Determination of band offsets, chemical bonding, and microstructure of the (TbxSc1−x)2O3/Si system

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