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Neutron irradiation effects on AlGaN/GaN high electron mobility transistors

Chinese physics B, 2012-03, Vol.21 (3), p.37104-1-037104-5

2012

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Investigation of passivation effects in AlGaN/GaN metal-insulator-semiconductor high electron-mobility transistor by gate-drain conductance dispersion study

Chinese physics B, 2011-08, Vol.20 (8), p.394-397, Article 087307

2011

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Fabrication and Characteristics of AlInN/AlN/GaN MOS-HEMTs with Ultra-Thin Atomic Layer Deposited Al2O3 Gate Dielectric

Chinese physics letters, 2010-12, Vol.27, p.128501

2010

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Optimization and Finite Element Analysis of the Temperature Field in a Nitride MOCVD Reactor by Induction Heating

Chinese physics letters, 2010-07, Vol.27 (7), p.070701-070701, Article 070701

2010

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Growth of InGaN films on c-plane sapphire substrates with an AlN nucleation layer by using metal-organic chemical-vapor deposition

Journal of the Korean Physical Society, 2012, 61(4), , pp.618-622

2012

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The effect of a HfO2 insulator on the improvement of breakdown voltage in field-plated GaN-based HEMT

Chinese physics B, 2011-09, Vol.20 (9), p.365-371

毛维杨翠郝跃马晓华王冲张进成刘红侠毕志伟许晟瑞杨林安杨凌张凯张乃干裴轶

2011

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AlGaN/GaN MIS-HEMT using NbAlO dielectric layer grown by atomic layer deposition

Chinese physics B, 2010-07, Vol.19 (7), p.513-517

毕志伟冯倩郝跃王党会马晓华张进成全思许晟瑞

2010

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Development and characteristic analysis of a field-plated Al2O3/AlInN/GaN MOS-HEMT

Chinese physics B, 2011, Vol.20 (1), p.8-12

毛维杨翠郝跃张进成刘红侠毕志伟许晟瑞薛军帅马晓华王冲杨林安张金风匡贤伟

2011

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Effect of Al2O3 dielectric layer thickness on the AlGaN/GaN metal-oxide-semiconductor higher-electron-mobility transistor characteristics

Wuli xuebao, 2009-10, Vol.58 (10), p.7211

2009

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AlGaN/GaN Metal-Insulator-Semiconductor High Electron-Mobility Transistor Using a NbAlO/Al 2 O 3 Laminated Dielectric by Atomic Layer Deposition

Chinese physics letters, 2012-02, Vol.29 (2), p.28501

2012

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A study of GaN MOSFETs with atomic-layer-deposited Al sub(2)O sub(3) as the gate dielectric

Chinese physics B, 2012-01, Vol.21 (1), p.017304-1-017304-5

2012

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A study of GaN MOSFETs with atomic-layer-deposited Al 2 O 3 as the gate dielectric

Chinese physics B, 2012-01, Vol.21 (1), p.17304

2012

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The effects of proton irradiation on the electrical properties of NbAlO/AlGaN/GaN MIS-HEMT

Science China. Physics, mechanics & astronomy, 2012, Vol.55 (1), p.40-43

2012

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The improvement of Al2O3/AlGaN/GaN MISHEMT performance by N2 plasma pretreatment

Chinese physics B, 2009-07, Vol.18, p.3014

2009

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Fabrication and Characteristics of AlInN/AlN/GaN MOS-HEMTs with Ultra-Thin Atomic Layer Deposited Al 2 O 3 Gate Dielectric

Chinese physics letters, 2010-12, Vol.27 (12), p.128501

2010

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The effect of a HfO 2 insulator on the improvement of breakdown voltage in field-plated GaN-based HEMT

Chinese physics B, 2011-09, Vol.20 (9), p.97203

2011

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Development and characteristic analysis of a field-plated Al 2 O 3 /AlInN/GaN MOS—HEMT

Chinese physics B, 2011-01, Vol.20 (1), p.17203

2011

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Study on the suppression mechanism of current collapse with field-plates in GaN high-electron mobility transistors

Wuli xuebao, 2011, Vol.60 (1), p.17205

2011

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The improvement of Al 2 O 3 /AlGaN/GaN MISHEMT performance by N 2 plasma pretreatment

Chinese physics B, 2009-07, Vol.18 (7), p.3014-3017

2009

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户外活动和维生素D的摄入量与帕金森病的风险呈负相关

浙江大学学报：B卷英文版, 2014, Vol.15 (10), p.923-927

Dan ZHU Gui-you LIU Zheng LV Shi-rong WEN Sheng BI Wei-zhi WANG

2014

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Discovery and Significance of Malan Loess on the Piedmont Plain in Pinggu District, Beijing

Acta geologica Sinica (Beijing), 2014-10, Vol.88 (5), p.1565-1578

English ed., 2014

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Downregulation of Notch-regulated Ankyrin Repeat Protein Exerts Antitumor Activities against Growth of Thyroid Cancer

Chinese medical journal, 2016-07, Vol.129 (13), p.1544-1552

2016

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AlGaN/GaN Metal-Insulator-Semiconductor High Electron-Mobility Transistor Using a NbAlO/Al sub(2)O sub(3) Laminated Dielectric by Atomic Layer Deposition

Chinese physics letters, 2012-01, Vol.29 (2), p.028501-1-028501-4

2012

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Stellar parameters of main sequence turn-off star candidates observed with LAMOST and Kepler

Research in astronomy and astrophysics, 2017-01, Vol.17 (1), p.5

2017

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Fine Mapping of qPAA8,a Gene Controlling Panicle Apical Development in Rice

Journal of integrative plant biology, 2011-09, Vol.53 (9), p.710-718

2011

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Neutron irradiation effects on AlGaN/GaN high electron mobility transistors

Investigation of passivation effects in AlGaN/GaN metal-insulator-semiconductor high electron-mobility transistor by gate-drain conductance dispersion study

Fabrication and Characteristics of AlInN/AlN/GaN MOS-HEMTs with Ultra-Thin Atomic Layer Deposited Al2O3 Gate Dielectric

Optimization and Finite Element Analysis of the Temperature Field in a Nitride MOCVD Reactor by Induction Heating

Growth of InGaN films on c-plane sapphire substrates with an AlN nucleation layer by using metal-organic chemical-vapor deposition

The effect of a HfO2 insulator on the improvement of breakdown voltage in field-plated GaN-based HEMT

AlGaN/GaN MIS-HEMT using NbAlO dielectric layer grown by atomic layer deposition

Development and characteristic analysis of a field-plated Al2O3/AlInN/GaN MOS-HEMT

Effect of Al2O3 dielectric layer thickness on the AlGaN/GaN metal-oxide-semiconductor higher-electron-mobility transistor characteristics

AlGaN/GaN Metal-Insulator-Semiconductor High Electron-Mobility Transistor Using a NbAlO/Al 2 O 3 Laminated Dielectric by Atomic Layer Deposition

A study of GaN MOSFETs with atomic-layer-deposited Al sub(2)O sub(3) as the gate dielectric

A study of GaN MOSFETs with atomic-layer-deposited Al 2 O 3 as the gate dielectric

The effects of proton irradiation on the electrical properties of NbAlO/AlGaN/GaN MIS-HEMT

The improvement of Al2O3/AlGaN/GaN MISHEMT performance by N2 plasma pretreatment

Fabrication and Characteristics of AlInN/AlN/GaN MOS-HEMTs with Ultra-Thin Atomic Layer Deposited Al 2 O 3 Gate Dielectric

The effect of a HfO 2 insulator on the improvement of breakdown voltage in field-plated GaN-based HEMT

Development and characteristic analysis of a field-plated Al 2 O 3 /AlInN/GaN MOS—HEMT

Study on the suppression mechanism of current collapse with field-plates in GaN high-electron mobility transistors

The improvement of Al 2 O 3 /AlGaN/GaN MISHEMT performance by N 2 plasma pretreatment

户外活动和维生素D的摄入量与帕金森病的风险呈负相关

Discovery and Significance of Malan Loess on the Piedmont Plain in Pinggu District, Beijing

Downregulation of Notch-regulated Ankyrin Repeat Protein Exerts Antitumor Activities against Growth of Thyroid Cancer

AlGaN/GaN Metal-Insulator-Semiconductor High Electron-Mobility Transistor Using a NbAlO/Al sub(2)O sub(3) Laminated Dielectric by Atomic Layer Deposition

Stellar parameters of main sequence turn-off star candidates observed with LAMOST and Kepler

Fine Mapping of qPAA8,a Gene Controlling Panicle Apical Development in Rice

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