UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

TaN metal gate damage during high-k (Al 2O 3) high-temperature etch

Microelectronic engineering, 2009-04, Vol.86 (4), p.949-952

2009

Volltextzugriff (PDF)

Influence of metal gate and capping film stress on TANOS cell performance

Microelectronic engineering, 2011-07, Vol.88 (7), p.1178-1181

2011

Volltextzugriff (PDF)

Traceable dynamic measurement of mechanical quantities: objectives and first results of this european project

International journal of metrology and quality engineering, 2012, Vol.3 (3), p.127-135

2012

Volltextzugriff (PDF)

Novel capacitance coupling coefficient measurement methodology for floating gate nonvolatile memory devices

IEEE electron device letters, 2005-07, Vol.26 (7), p.507-509

2005

Volltextzugriff (PDF)

Improved dual Josephson voltage standard potentiometer for high precision arbitrary resistance ratio measurements

CPEM 2010, 2010, p.611-612

2010

Volltextzugriff (PDF)

Charge cross talk in sub-lithographically shrinked 32 nm Twin Flash™ memory cells

Solid-state electronics, 2008-04, Vol.52 (4), p.571-576

2008

Volltextzugriff (PDF)

Investigation of Program Saturation in Scaled Interpoly Dielectric Floating-Gate Memory Devices

IEEE transactions on electron devices, 2009-08, Vol.56 (8), p.1698-1704

2009

Volltextzugriff (PDF)

Gate-Side and Substrate-Side Oxide Trap and Interface State Generation in Conventional and Nitrided Tunnel Oxides of Floating Gate Cells

IEEE transactions on electron devices, 2011-03, Vol.58 (3), p.819-825

2011

Volltextzugriff (PDF)

Calibration of an Inductive Voltage Divider Using Pulse-Driven Josephson Arrays

2018 Conference on Precision Electromagnetic Measurements (CPEM 2018), 2018, p.1-2

2018

Volltextzugriff (PDF)

TaN and \hbox\hbox Sidewall Gate-Etch Damage Influence on Program, Erase, and Retention of Sub-50-nm TANOS nand Flash Memory Cells

IEEE transactions on electron devices, 2011-06, Vol.58 (6), p.1728-1734

2011

Volltextzugriff (PDF)

Dynamic bridge standard for strain gauge bridge amplifier calibration

2012 Conference on Precision electromagnetic Measurements, 2012, p.568-569

2012

Volltextzugriff (PDF)

Select Device Disturb Phenomenon in TANOS NAND Flash Memories

IEEE electron device letters, 2009-05, Vol.30 (5), p.568-570

2009

Volltextzugriff (PDF)

Improved high-temperature etch processing of high- k metal gate stacks in scaled TANOS memory devices

Microelectronic engineering, 2010-05, Vol.87 (5), p.1629-1633

2010

Volltextzugriff (PDF)

Intrinsic Mismatch Between Floating-Gate Nonvolatile Memory Cell and Equivalent Transistor

IEEE electron device letters, 2007-05, Vol.28 (5), p.440-442

2007

Volltextzugriff (PDF)

Combining Josephson systems for pure AC waveforms with large amplitudes

2012 Conference on Precision electromagnetic Measurements, 2012, p.54-55

2012

Volltextzugriff (PDF)

Detailed investigation of the transient local tunneling in gate oxides

2003 IEEE International Reliability Physics Symposium Proceedings, 2003. 41st Annual, 2003, p.116-120

2003

Volltextzugriff (PDF)

2D NAND Flash Technology

Inside Solid State Drives (SSDs), 2018, Vol.37, p.61-104

2018

Volltextzugriff (PDF)

Improved high-temperature etch processing of high-κ metal gate stacks in scaled TANOS memory devices

Microelectronic engineering, 2010, Vol.87 (5-8), p.1629-1633

2010

Volltextzugriff (PDF)

Polarity dependent generation of gate-side and substrate-side oxide border traps in nitrided gate oxides

Microelectronic engineering, 2005-06, Vol.80, p.444-447

2005

Volltextzugriff (PDF)

p38α controls erythroblast enucleation and Rb signaling in stress erythropoiesis

Cell research, 2012-03, Vol.22 (3), p.539-550

2012

Volltextzugriff (PDF)

PTB's status of AC voltage metrolgy by microwave- and pulsetrain-driven josephson junction arrays

2013 International Kharkov Symposium on Physics and Engineering of Microwaves, Millimeter and Submillimeter Waves, 2013, p.652-654

2013

Volltextzugriff (PDF)

Analysis of trap mechanisms responsible for Random Telegraph Noise and erratic programming on sub-50nm floating gate flash memories

2009 10th Annual Non-Volatile Memory Technology Symposium (NVMTS), 2009, p.67-71

2009

Volltextzugriff (PDF)

Anomalous Erase Behavior in Charge Trapping Memory Cells

2008 Joint Non-Volatile Semiconductor Memory Workshop and International Conference on Memory Technology and Design, 2008, p.121-123

2008

Volltextzugriff (PDF)

Metal control gate for sub-30nm floating gate NAND memory

2008 9th Annual Non-Volatile Memory Technology Symposium (NVMTS), 2008, p.1-4

2008

Volltextzugriff (PDF)

Analysis and modeling of the transient local tunneling in gate oxides

IEEE transactions on device and materials reliability, 2004-03, Vol.4 (1), p.73-79

2004

Volltextzugriff (PDF)

1 – 25 von 64

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(48)
Mit Volltextzugriff
(60)

Publikationsform

Sprache

Englisch
(63)
Deutsch
(1)

Erscheinungsjahr

n.n

Thema

Science & Technology
(46)
Life Sciences & Biomedicine
(28)
Animals
(24)
Cell Biology
(20)
Mice
(18)
Biochemistry & Molecular Biology
(16)
Engineering
(16)
Engineering, Electrical & Electronic
(16)
Technology
(16)
Humans
(13)
Exact Sciences And Technology
(11)
Physics
(11)
Applied Sciences
(10)
Electronics
(10)
Physical Sciences
(10)
Signal Transduction
(10)
Nonvolatile Memory
(9)
Physics, Applied
(9)
Semiconductor Electronics. Microelectronics. Optoelectronics. Solid State Devices
(9)
Apoptosis
(8)

15 weitere anzeigen...

Weniger anzeigen...

Zeitschrift / Serie

5 weitere anzeigen...

Weniger anzeigen...

Menü

Weitere Dienste

Einstellungen

TaN metal gate damage during high-k (Al 2O 3) high-temperature etch

Influence of metal gate and capping film stress on TANOS cell performance

Traceable dynamic measurement of mechanical quantities: objectives and first results of this european project

Novel capacitance coupling coefficient measurement methodology for floating gate nonvolatile memory devices

Improved dual Josephson voltage standard potentiometer for high precision arbitrary resistance ratio measurements

Charge cross talk in sub-lithographically shrinked 32 nm Twin Flash™ memory cells

Investigation of Program Saturation in Scaled Interpoly Dielectric Floating-Gate Memory Devices

Gate-Side and Substrate-Side Oxide Trap and Interface State Generation in Conventional and Nitrided Tunnel Oxides of Floating Gate Cells

Calibration of an Inductive Voltage Divider Using Pulse-Driven Josephson Arrays

TaN and \hbox\hbox Sidewall Gate-Etch Damage Influence on Program, Erase, and Retention of Sub-50-nm TANOS nand Flash Memory Cells

Dynamic bridge standard for strain gauge bridge amplifier calibration

Select Device Disturb Phenomenon in TANOS NAND Flash Memories

Improved high-temperature etch processing of high- k metal gate stacks in scaled TANOS memory devices

Intrinsic Mismatch Between Floating-Gate Nonvolatile Memory Cell and Equivalent Transistor

Combining Josephson systems for pure AC waveforms with large amplitudes

Detailed investigation of the transient local tunneling in gate oxides

2D NAND Flash Technology

Improved high-temperature etch processing of high-κ metal gate stacks in scaled TANOS memory devices

Polarity dependent generation of gate-side and substrate-side oxide border traps in nitrided gate oxides

p38α controls erythroblast enucleation and Rb signaling in stress erythropoiesis

PTB's status of AC voltage metrolgy by microwave- and pulsetrain-driven josephson junction arrays

Analysis of trap mechanisms responsible for Random Telegraph Noise and erratic programming on sub-50nm floating gate flash memories

Anomalous Erase Behavior in Charge Trapping Memory Cells

Metal control gate for sub-30nm floating gate NAND memory

Analysis and modeling of the transient local tunneling in gate oxides

Suchergebnisse filtern