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Nonintrusive wafer temperature measurement using in situ ellipsometry

Journal of applied physics, 1991-03, Vol.69 (5), p.3390-3392

1991

Volltextzugriff (PDF)

Interactive effects in the reactive ion etching of SiGe alloys

Applied physics letters, 1991-05, Vol.58 (20), p.2252-2254

1991

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Photoluminescence characterization of plasma exposed silicon surfaces

Journal of applied physics, 1991-11, Vol.70 (10), p.5597-5603

1991

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A Study of Luminescent Centers in Reactive‐Ion‐Etched Silicon

Journal of the Electrochemical Society, 1991-04, Vol.138 (4), p.1138-1143

1991

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Selective Dry Etching of Germanium with Respect to Silicon and Vice Versa

Journal of the Electrochemical Society, 1991-05, Vol.138 (5), p.1443-1452

1991

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Studies of the reactive ion etching of SiGe alloys

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 1991-05, Vol.9 (3), p.768-774

1991

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Selective dry etching of silicon with respect to germanium

Applied physics letters, 1990-04, Vol.56 (15), p.1436-1438

1990

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Study of oxygen addition to CF3Br reactive ion etching plasmas: effects on silicon surface chemistry and etching behavior

Applied physics letters, 1989-06, Vol.54 (23), p.2321-2323

1989

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Reactive ion etching of SiGe alloys using HBr

Applied physics letters, 1991-07, Vol.59 (3), p.336-338

1991

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Tungsten etching mechanisms in CF4/O2 reactive ion etching plasmas

Journal of applied physics, 1989-11, Vol.66 (10), p.5034-5038

1989

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Reactive ion etching of silicon using bromine containing plasmas

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 1990-05, Vol.8 (3), p.1696-1701

1990

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Uniform and efficient GaAs/AlGaAs quantum dots

Applied physics letters, 1995-03, Vol.66 (11), p.1382-1384

1995

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Cryogenic reactive ion etching of silicon in SF6

Applied physics letters, 1990-07, Vol.57 (5), p.431-433

1990

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Photoluminescence Characterisation of the Silicon Surface Exposed to Plasma Treatment

Materials science forum, 1992-01, Vol.83-87, p.1445-1450

1992

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ChemInform Abstract: Selective Dry Etching of Germanium with Respect to Silicon and Vice Versa

ChemInform, 1991-07, Vol.22 (29), p.no-no

1991

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Scanning tunnelling microscopy of ion etched silicon

Vacuum, 1988, Vol.38 (8), p.823-826

1988

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Observation of both heavy- and light-hole excitons in (25-60)-nm diameter GaAs-(Al,Ga)As quantum dots

Physical review. B, Condensed matter, 1995-09, Vol.52 (12), p.R8640-R8642

1995

Volltextzugriff (PDF)

Precise Quantization of the Anomalous Hall Effect near Zero Magnetic Field

Physical review letters, 2015-05, Vol.114 (18), p.187201-187201, Article 187201

2015

Volltextzugriff (PDF)

Adherence to Drugs That Prevent Cardiovascular Disease: Meta-analysis on 376,162 Patients

The American journal of medicine, 2012-09, Vol.125 (9), p.882-887.e1

2012

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Combination Therapy Versus Monotherapy in Reducing Blood Pressure: Meta-analysis on 11,000 Participants from 42 Trials

The American journal of medicine, 2009-03, Vol.122 (3), p.290-300

2009

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Serum neurofilament light chain is a biomarker of human spinal cord injury severity and outcome

Journal of neurology, neurosurgery and psychiatry, 2015-03, Vol.86 (3), p.273-279

2015

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Unconventional Josephson effect in hybrid superconductor-topological insulator devices

Physical review letters, 2012-07, Vol.109 (5), p.056803-056803, Article 056803

2012

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One-way Versus Two-way Text Messaging on Improving Medication Adherence: Meta-analysis of Randomized Trials

The American journal of medicine, 2015-10, Vol.128 (10), p.1139.e1-1139.e5

2015

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Composite fermions and broken symmetries in graphene

Nature communications, 2015-01, Vol.6 (1), p.5838-5838, Article 5838

2015

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Conversion from clinically isolated syndrome to multiple sclerosis: A large multicentre study

Multiple sclerosis, 2015-07, Vol.21 (8), p.1013-1024

2015

Volltextzugriff (PDF)

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Nonintrusive wafer temperature measurement using in situ ellipsometry

Interactive effects in the reactive ion etching of SiGe alloys

Photoluminescence characterization of plasma exposed silicon surfaces

A Study of Luminescent Centers in Reactive‐Ion‐Etched Silicon

Selective Dry Etching of Germanium with Respect to Silicon and Vice Versa

Studies of the reactive ion etching of SiGe alloys

Selective dry etching of silicon with respect to germanium

Study of oxygen addition to CF3Br reactive ion etching plasmas: effects on silicon surface chemistry and etching behavior

Reactive ion etching of SiGe alloys using HBr

Tungsten etching mechanisms in CF4/O2 reactive ion etching plasmas

Reactive ion etching of silicon using bromine containing plasmas

Uniform and efficient GaAs/AlGaAs quantum dots

Cryogenic reactive ion etching of silicon in SF6

Photoluminescence Characterisation of the Silicon Surface Exposed to Plasma Treatment

ChemInform Abstract: Selective Dry Etching of Germanium with Respect to Silicon and Vice Versa

Scanning tunnelling microscopy of ion etched silicon

Observation of both heavy- and light-hole excitons in (25-60)-nm diameter GaAs-(Al,Ga)As quantum dots

Precise Quantization of the Anomalous Hall Effect near Zero Magnetic Field

Adherence to Drugs That Prevent Cardiovascular Disease: Meta-analysis on 376,162 Patients

Combination Therapy Versus Monotherapy in Reducing Blood Pressure: Meta-analysis on 11,000 Participants from 42 Trials

Serum neurofilament light chain is a biomarker of human spinal cord injury severity and outcome

Unconventional Josephson effect in hybrid superconductor-topological insulator devices

One-way Versus Two-way Text Messaging on Improving Medication Adherence: Meta-analysis of Randomized Trials

Composite fermions and broken symmetries in graphene

Conversion from clinically isolated syndrome to multiple sclerosis: A large multicentre study

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