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Charge Transport and Degradation in HfO2 and HfOx Dielectrics

IEEE electron device letters, 2013-05, Vol.34 (5), p.680-682

2013

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IEEE_Xplore

Assessing hafnium on hafnia as an oxygen getter

Journal of applied physics, 2014-05, Vol.115 (18)

2014

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A Compact Model of Program Window in HfOx RRAM Devices for Conductive Filament Characteristics Analysis

IEEE transactions on electron devices, 2014-08, Vol.61 (8), p.2668-2673

2014

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IEEE_Xplore

Gate dielectric degradation: Pre-existing vs. generated defects

Journal of applied physics, 2014-01, Vol.115 (3)

2014

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Conductive paths through polycrystalline BaTiO3: Scanning probe microscopy study

Applied physics letters, 2016-08, Vol.109 (7)

2016

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Leakage current through the poly-crystalline HfO2: Trap densities at grains and grain boundaries

Journal of applied physics, 2013-10, Vol.114 (13)

2013

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Ultra-fast switching memristors based on two-dimensional materials

Nature communications, 2024-03, Vol.15 (1), p.2334-2334, Article 2334

2024

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Threshold Voltage Shift Due to Charge Trapping in Dielectric-Gated AlGaN/GaN High Electron Mobility Transistors Examined in Au-Free Technology

IEEE transactions on electron devices, 2013-10, Vol.60 (10), p.3197-3203

2013

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IEEE_Xplore

A Charge-Trapping Model for the Fast Component of Positive Bias Temperature Instability (PBTI) in High- \kappa Gate-Stacks

IEEE transactions on electron devices, 2014-07, Vol.61 (7), p.2287-2293

2014

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IEEE_Xplore

Charge trapping in alumina and its impact on the operation of metal-alumina-nitride-oxide-silicon memories: Experiments and simulations

Journal of applied physics, 2011-07, Vol.110 (1), p.014505-014505-9

2011

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Impact of Semiconductor and Interface-State Capacitance on Metal/High-k/GaAs Capacitance-Voltage Characteristics

IEEE transactions on electron devices, 2010-10, Vol.57 (10), p.2599-2606

2010

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IEEE_Xplore

Microscopic Modeling of HfOx RRAM Operations: From Forming to Switching

IEEE transactions on electron devices, 2015-06, Vol.62 (6), p.1998-2006

2015

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IEEE_Xplore

Origin of the Flatband-Voltage Roll-Off Phenomenon in Metal/High- k Gate Stacks

IEEE transactions on electron devices, 2010-09, Vol.57 (9), p.2047-2056

2010

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IEEE_Xplore

Spatial distributions of trapping centers in HfO2∕SiO2 gate stacks

Applied physics letters, 2006-04, Vol.88 (15)

2006

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Intrinsic Electronically Active Defects in Transition Metal Elemental Oxides

Japanese Journal of Applied Physics, 2007-04, Vol.46 (4S), p.1899

2007

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Microscopic Modeling of Electrical Stress-Induced Breakdown in Poly-Crystalline Hafnium Oxide Dielectrics

IEEE transactions on electron devices, 2013-05, Vol.60 (5), p.1754-1762

2013

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IEEE_Xplore

Electric-field-driven dielectric breakdown of metal-insulator-metal hafnium silicate

Applied physics letters, 2007-12, Vol.91 (24)

2007

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Modelling of oxygen vacancy aggregates in monoclinic HfO2: can they contribute to conductive filament formation?

Journal of physics. Condensed matter, 2015-10, Vol.27 (41), p.415401-415401

2015

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Physicochemical properties of HfO2 in response to rapid thermal anneal

Applied physics letters, 2003-02, Vol.82 (8), p.1266-1268

2003

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Charge trapping and detrapping characteristics in hafnium silicate gate dielectric using an inversion pulse measurement technique

Applied physics letters, 2005-09, Vol.87 (12), p.122901-122901-3

2005

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The Pulsed Id-Vg methodology and Its Application to the Electron Trapping Characterization of High-κ gate Dielectrics

Journal of semiconductor technology and science, 2010, Vol.10 (2), p.79-99

2010

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Switching characteristics of W Zr HfO2 TiN ReRAM devices for multi-level cell non-volatile memory applications

Semiconductor science and technology, 2015-07, Vol.30 (7)

2015

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Probing and Manipulating the Interfacial Defects of InGaAs Dual‐Layer Metal Oxides at the Atomic Scale

Advanced materials (Weinheim), 2018-01, Vol.30 (2), p.n/a

2018

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An Empirical Model for RRAM Resistance in Low- and High-Resistance States

IEEE electron device letters, 2013-03, Vol.34 (3), p.387-389

2013

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IEEE_Xplore

Assessing device reliability through atomic-level modeling of material characteristics

2014 IEEE International Conference on IC Design & Technology, 2014, p.1-3

Bersuker, Gennadi

2014

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IEEE_Xplore

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Charge Transport and Degradation in HfO2 and HfOx Dielectrics

Assessing hafnium on hafnia as an oxygen getter

A Compact Model of Program Window in HfOx RRAM Devices for Conductive Filament Characteristics Analysis

Gate dielectric degradation: Pre-existing vs. generated defects

Conductive paths through polycrystalline BaTiO3: Scanning probe microscopy study

Leakage current through the poly-crystalline HfO2: Trap densities at grains and grain boundaries

Ultra-fast switching memristors based on two-dimensional materials

Threshold Voltage Shift Due to Charge Trapping in Dielectric-Gated AlGaN/GaN High Electron Mobility Transistors Examined in Au-Free Technology

A Charge-Trapping Model for the Fast Component of Positive Bias Temperature Instability (PBTI) in High- \kappa Gate-Stacks

Charge trapping in alumina and its impact on the operation of metal-alumina-nitride-oxide-silicon memories: Experiments and simulations

Impact of Semiconductor and Interface-State Capacitance on Metal/High-k/GaAs Capacitance-Voltage Characteristics

Microscopic Modeling of HfOx RRAM Operations: From Forming to Switching

Origin of the Flatband-Voltage Roll-Off Phenomenon in Metal/High- k Gate Stacks

Spatial distributions of trapping centers in HfO2∕SiO2 gate stacks

Intrinsic Electronically Active Defects in Transition Metal Elemental Oxides

Microscopic Modeling of Electrical Stress-Induced Breakdown in Poly-Crystalline Hafnium Oxide Dielectrics

Electric-field-driven dielectric breakdown of metal-insulator-metal hafnium silicate

Modelling of oxygen vacancy aggregates in monoclinic HfO2: can they contribute to conductive filament formation?

Physicochemical properties of HfO2 in response to rapid thermal anneal

Charge trapping and detrapping characteristics in hafnium silicate gate dielectric using an inversion pulse measurement technique

The Pulsed Id-Vg methodology and Its Application to the Electron Trapping Characterization of High-κ gate Dielectrics

Switching characteristics of W Zr HfO2 TiN ReRAM devices for multi-level cell non-volatile memory applications

Probing and Manipulating the Interfacial Defects of InGaAs Dual‐Layer Metal Oxides at the Atomic Scale

An Empirical Model for RRAM Resistance in Low- and High-Resistance States

Assessing device reliability through atomic-level modeling of material characteristics

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