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Handbook for Interpreters in Asylum Procedures

2022

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Automated emissivity corrected wafer-temperature measurement in Aixtrons planetary reactors

Journal of crystal growth, 2003-02, Vol.248, p.235-239

2003

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Carbon doping for the GaAs base layer of Heterojunction Bipolar Transistors in a production scale MOVPE reactor

Journal of crystal growth, 2000-12, Vol.221 (1), p.53-58

2000

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Handbook for Interpreters in Asylum Procedures

1, 2018

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Modeling and experimental verification of transport and deposition behavior during MOVPE of Ga1-xInxP in the Planetary Reactor

Journal of crystal growth, 2000, Vol.208 (1-4), p.85-92

2000

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Effect of high-temperature annealing on GaInP/GaAs HBT structures grown by LP-MOVPE

Journal of electronic materials, 2000-02, Vol.29 (2), p.205-209

2000

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Critical issues of growth optimization for Ga0.5In0.5P/GaAs heterojunction bipolar transistors

Journal of materials science. Materials in electronics, 2002-11, Vol.13 (11), p.665-670

2002

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Heat transfer and mass transport in a multiwafer MOVPE reactor: modelling and experimental studies

Journal of crystal growth, 1997-01, Vol.170 (1-4), p.66-71

1997

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600 V, low-leakage AlGaN/GaN MIS-HEMT on bulk GaN substrates

2016 46th European Solid-State Device Research Conference (ESSDERC), 2016, p.202-205

2016

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Process optimisation of MOVPE growth by numerical modelling of transport phenomena including thermal radiation

Journal of crystal growth, 1997-10, Vol.180 (3-4), p.660-669

1997

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Growth monitoring by reflectance anisotropy spectroscopy in MOVPE reactors for device fabrication

Journal of crystal growth, 1997-01, Vol.170 (1-4), p.203-207

1997

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Transport and reaction behaviour in Aix-2000 planetary metalorganic vapour phase epitaxy reactor

Journal of crystal growth, 1995-01, Vol.146 (1-4), p.564-569

1995

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Assessment of compensation ratio in high-purity GaAs using photoluminescence

Materials science & engineering. B, Solid-state materials for advanced technology, 1997-02, Vol.44 (1), p.228-232

1997

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High mobility HgTe and high resistivity CdTe grown by MOVPE on GaAs (001)

Physica status solidi. A, Applied research, 1990-09, Vol.121 (1), p.K55-K59

1990

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Critical issues of growth optimization for Ga\+v\0.5\-v\In\+v\0.5\-v\P /GaAs heterojunction bipolar transistors

Journal of materials science. Materials in electronics, 2002-11, Vol.13 (11), p.665-70.

2002

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Critical issues of growth optimization for Ga sub(0.5)In sub(0.5)P/GaAs heterojunction bipolar transistors

Journal of materials science. Materials in electronics, 2002-11, Vol.13 (11), p.665-670

2002

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Critical issues of growth optimization for Ga(0.5)In(0.5)P/GaAs heterojunction bipolar transistors

Journal of materials science. Materials in electronics, 2002-11, Vol.13 (11), p.665-670

2002

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