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Defects in ZnO Nanorods Prepared by a Hydrothermal Method

The journal of physical chemistry. B, 2006-10, Vol.110 (42), p.20865-20871

2006

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Current transport studies of ZnO∕p-Si heterostructures grown by plasma immersion ion implantation and deposition

Applied physics letters, 2006-03, Vol.88 (13)

2006

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Influence of annealing temperature and environment on the properties of indium tin oxide thin films

Journal of physics. D, Applied physics, 2005-06, Vol.38 (12), p.2000-2005

2005

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A novel design for a variable energy positron lifetime spectrometer

Applied surface science, 2008-10, Vol.255 (1), p.122-124

2008

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Nature of the acceptor responsible for p-type conduction in liquid encapsulated Czochralski-grown undoped gallium antimonide

Applied physics letters, 2004-07, Vol.85 (3), p.384-386

2004

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Properties of ITO thin films deposited on amorphous and crystalline substrates with e-beam evaporation

Semiconductor science and technology, 2004-06, Vol.19 (6), p.695-698

2004

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Defect formation and annealing behaviors of fluorine-implanted GaN layers revealed by positron annihilation spectroscopy

Applied physics letters, 2009-02, Vol.94 (6), p.061910-061910-3

2009

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Spatial characterization of a 2 in GaN wafer by Raman spectroscopy and capacitance–voltage measurements

Journal of physics. D, Applied physics, 2004-10, Vol.37 (20), p.2814-2818

2004

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Defect study in ZnO related structures—A multi-spectroscopic approach

Applied surface science, 2008-10, Vol.255 (1), p.58-62

2008

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Positron beam studies of transients in semiconductors

Applied surface science, 2006-02, Vol.252 (9), p.3172-3182

2006

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Deep level transient spectroscopic study of neutron-irradiated n -type 6H–SiC

Journal of applied physics, 2003-09, Vol.94 (5), p.3004-3010

2003

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Positron beam study of indium tin oxide films on GaN

Journal of physics. Condensed matter, 2007-02, Vol.19 (8), p.086204-086204 (10)

2007

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Electron irradiated liquid encapsulated Czochralski grown undoped gallium antimonide studied by positron lifetime spectroscopy and photoluminescence

Journal of physics. Condensed matter, 2004-09, Vol.16 (34), p.6205-6212

2004

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Experimental study and modeling of the influence of screw dislocations on the performance of Au/n-GaN Schottky diodes

Journal of applied physics, 2003-11, Vol.94 (9), p.5771-5775

2003

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Positron lifetime studies on 8 MeV electron-irradiated n-type 6H silicon carbide

Journal of physics. Condensed matter, 2004-11, Vol.16 (46), p.8409-8419

2004

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Experimental investigation of slow-positron emission from 4H-SiC and 6H-SiC surfaces

Journal of physics. Condensed matter, 2002-07, Vol.14 (25), p.6373-6381, Article 306

2002

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Preliminary studies on a variable energy positron annihilation lifetime spectroscopy system

Applied surface science, 2006-02, Vol.252 (9), p.3138-3142

2006

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Film thickness degradation of Au/GaN Schottky contact characteristics

Materials science & engineering. B, Solid-state materials for advanced technology, 2005-02, Vol.117 (1), p.21-25

2005

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Electron-irradiation-induced deep levels in n -type 6H–SiC

Journal of applied physics, 1999-06, Vol.85 (11), p.7604-7608

1999

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Performance of a slow positron beam using a hybrid lens design

Applied surface science, 2006-02, Vol.252 (9), p.3132-3137

2006

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New defect spectroscopies

Applied surface science, 2002-06, Vol.194 (1), p.224-233

Beling, C.D.

2002

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A study of the electric field transient at the Au/semi-insulating GaAs contact under an alternating current square-pulse bias

Journal of physics. Condensed matter, 2002-12, Vol.14 (49), p.13705-13715

2002

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Positron annihilation studies of high dose Sb implanted silicon

Materials science & engineering. B, Solid-state materials for advanced technology, 2005-12, Vol.124, p.283-287, Article 283

2005

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A search for defect configurational changes in the post-breakdown metastability of semi-insulating GaAs

Physica Status Solidi (b), 2004-02, Vol.241 (2), p.317-320

2004

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Influence of gaseous annealing environment on the properties of indium-tin-oxide thin films

Journal of applied physics, 2005-02, Vol.97 (3), p.033504-033504-5

2005

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Defects in ZnO Nanorods Prepared by a Hydrothermal Method

Current transport studies of ZnO∕p-Si heterostructures grown by plasma immersion ion implantation and deposition

Influence of annealing temperature and environment on the properties of indium tin oxide thin films

A novel design for a variable energy positron lifetime spectrometer

Nature of the acceptor responsible for p-type conduction in liquid encapsulated Czochralski-grown undoped gallium antimonide

Properties of ITO thin films deposited on amorphous and crystalline substrates with e-beam evaporation

Defect formation and annealing behaviors of fluorine-implanted GaN layers revealed by positron annihilation spectroscopy

Spatial characterization of a 2 in GaN wafer by Raman spectroscopy and capacitance–voltage measurements

Defect study in ZnO related structures—A multi-spectroscopic approach

Positron beam studies of transients in semiconductors

Deep level transient spectroscopic study of neutron-irradiated n -type 6H–SiC

Positron beam study of indium tin oxide films on GaN

Electron irradiated liquid encapsulated Czochralski grown undoped gallium antimonide studied by positron lifetime spectroscopy and photoluminescence

Experimental study and modeling of the influence of screw dislocations on the performance of Au/n-GaN Schottky diodes

Positron lifetime studies on 8 MeV electron-irradiated n-type 6H silicon carbide

Experimental investigation of slow-positron emission from 4H-SiC and 6H-SiC surfaces

Preliminary studies on a variable energy positron annihilation lifetime spectroscopy system

Film thickness degradation of Au/GaN Schottky contact characteristics

Electron-irradiation-induced deep levels in n -type 6H–SiC

Performance of a slow positron beam using a hybrid lens design

New defect spectroscopies

A study of the electric field transient at the Au/semi-insulating GaAs contact under an alternating current square-pulse bias

Positron annihilation studies of high dose Sb implanted silicon

A search for defect configurational changes in the post-breakdown metastability of semi-insulating GaAs

Influence of gaseous annealing environment on the properties of indium-tin-oxide thin films

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