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Silicide formation and silicide-mediated crystallization of nickel-implanted amorphous silicon thin films

Journal of applied physics, 1993-06, Vol.73 (12), p.8279-8289

1993

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In situ transmission electron microscopy studies of silicide-mediated crystallization of amorphous silicon

Applied physics letters, 1992-01, Vol.60 (2), p.225-227

1992

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Stability of visible luminescence from porous silicon

Applied physics letters, 1993-05, Vol.62 (21), p.2667-2669

1993

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Control of pinholes in epitaxial CoSi2 layers on Si(111)

Applied physics letters, 1988-02, Vol.52 (8), p.648-650

1988

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In situ crystallization of amorphous silicon in the transmission electron microscope

Philosophical magazine. A, Physics of condensed matter. Defects and mechanical properties, 1993-01, Vol.67 (1), p.51-72

Batstone, J. L.

1993

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Control of epitaxial orientation of Si on CoSi2(111)

Applied physics letters, 1988-05, Vol.52 (19), p.1611-1613

1988

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Electrical and structural characterization of ultrathin epitaxial CoSi2 on Si(111)

Applied physics letters, 1987-12, Vol.51 (23), p.1895-1897

1987

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Evidence for the influence of interfacial atomic structure on electrical properties at the epitaxial CaF2/Si(111) interface

Physical review letters, 1988-04, Vol.60 (14), p.1394-1397

1988

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Subboundary-free zone-melt recrystallization of thin-film silicon

Applied physics letters, 1987-10, Vol.51 (16), p.1256-1258

1987

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Coreless defects and the continuity of epitaxial NiSi2/Si(100) thin films

Applied physics letters, 1988-03, Vol.52 (10), p.828-830

1988

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Twin intersections in silicon on sapphire

Philosophical magazine. B, Physics of condensed matter. Structural, electronic, optical, and magnetic properties., 1991-05, Vol.63 (5), p.1037-1050

Batstone, J. L.

1991

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Mechanisms of buried oxide formation by ion implantation

Applied physics letters, 1987-01, Vol.50 (1), p.19-21

1987

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Stacking fault asymmetry in epitaxial films of mocvd znse/gaas(001)

Philosophical magazine. A, Physics of condensed matter. Defects and mechanical properties, 1992-10, Vol.66 (4), p.609-620

1992

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Radiation-enhanced diffusion of Au in amorphous Si

Applied physics letters, 1988-04, Vol.52 (15), p.1213-1215

1988

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Si / CoSi2 / Si Structures: Pseudomorphism, Interface Structures, Epitaxial Orientations, and the Control of Pinholes

Journal of the Electrochemical Society, 1989-03, Vol.136 (3), p.815-819

1989

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Rapid thermal processing to improve the epitaxy of (100) silicon on (1102) sapphire

Applied physics letters, 1987-02, Vol.50 (8), p.466-468

1987

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Twin formation and Au segregation during ion-beam-induced epitaxy of amorphous Si

Applied physics letters, 1988-03, Vol.52 (13), p.1043-1045

1988

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Growth and characterization of ultrathin cobalt silicide films on Si(211) and (311)

Journal of materials research, 1990-05, Vol.5 (5), p.1032-1041

1990

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Dependence of the structural and electrical properties of ultrathin cobalt silicide films on formation conditions

Journal of materials research, 1989-02, Vol.4 (1), p.144-155

1989

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Trapping of Au in Si during pulsed laser irradiation: a comparison with ion beam induced segregation

Applied physics letters, 1988-12, Vol.53 (25), p.2486-2488

1988

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Luminescence studies of individual dislocations in II-VI (ZnSe) and III-V (InP) semiconductors

Journal of physics. C, Solid state physics, 1984-12, Vol.17 (35), p.6477-6492

1984

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Origin of A- or B-type NiSii2 determined by in in situ transmission electron microscopy and diffraction during growth

Physical review letters, 1988-03, Vol.60 (12), p.1158-1161

1988

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Motion of Crystal/Crystal and Crystal/Amorphous Interfaces

MRS proceedings, 1990, Vol.183, Article 79

Batstone, J. L.

1990

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Batstone and Phillips reply

Physical review letters, 1988-11, Vol.61 (19), p.2275-2275

1988

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Nonequilibrium segregation and trapping phenomena during ion-induced crystallization of amorphous Si

Physical review letters, 1988-03, Vol.60 (13), p.1322-1325

1988

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Silicide formation and silicide-mediated crystallization of nickel-implanted amorphous silicon thin films

In situ transmission electron microscopy studies of silicide-mediated crystallization of amorphous silicon

Stability of visible luminescence from porous silicon

Control of pinholes in epitaxial CoSi2 layers on Si(111)

In situ crystallization of amorphous silicon in the transmission electron microscope

Control of epitaxial orientation of Si on CoSi2(111)

Electrical and structural characterization of ultrathin epitaxial CoSi2 on Si(111)

Evidence for the influence of interfacial atomic structure on electrical properties at the epitaxial CaF2/Si(111) interface

Subboundary-free zone-melt recrystallization of thin-film silicon

Coreless defects and the continuity of epitaxial NiSi2/Si(100) thin films

Twin intersections in silicon on sapphire

Mechanisms of buried oxide formation by ion implantation

Stacking fault asymmetry in epitaxial films of mocvd znse/gaas(001)

Radiation-enhanced diffusion of Au in amorphous Si

Si / CoSi2 / Si Structures: Pseudomorphism, Interface Structures, Epitaxial Orientations, and the Control of Pinholes

Rapid thermal processing to improve the epitaxy of (100) silicon on (1102) sapphire

Twin formation and Au segregation during ion-beam-induced epitaxy of amorphous Si

Growth and characterization of ultrathin cobalt silicide films on Si(211) and (311)

Dependence of the structural and electrical properties of ultrathin cobalt silicide films on formation conditions

Trapping of Au in Si during pulsed laser irradiation: a comparison with ion beam induced segregation

Luminescence studies of individual dislocations in II-VI (ZnSe) and III-V (InP) semiconductors

Origin of A- or B-type NiSii2 determined by in in situ transmission electron microscopy and diffraction during growth

Motion of Crystal/Crystal and Crystal/Amorphous Interfaces

Batstone and Phillips reply

Nonequilibrium segregation and trapping phenomena during ion-induced crystallization of amorphous Si

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