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Limiting factors on the semiconductor structure of III-V multijunction solar cells for ultra-high concentration (1000-5000 suns)

Progress in photovoltaics, 2016-10, Vol.24 (10), p.1332-1345

2016

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Refractive indexes and extinction coefficients of n- and p-type doped GaInP, AlInP and AlGaInP for multijunction solar cells

Solar energy materials and solar cells, 2018-01, Vol.174, p.388-396

2018

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Combined photo- and electroreflectance of multijunction solar cells enabled by subcell electric coupling

Applied physics letters, 2019-04, Vol.114 (15)

2019

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10 MeV proton irradiation effects on GaInP/GaAs/Ge concentrator solar cells and their component subcells

Solar energy materials and solar cells, 2017-01, Vol.159, p.576-582

2017

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Reflectance anisotropy spectroscopy assessment of the MOVPE nucleation of GaInP on germanium (1 0 0)

Journal of crystal growth, 2011-01, Vol.315 (1), p.22-27

2011

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Analysis of perimeter recombination in the subcells of GaInP/GaAs/Ge triple-junction solar cells

Progress in photovoltaics, 2015-07, Vol.23 (7), p.874-882

2015

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The effect of Sb-surfactant on GaInP CuPtB type ordering: assessment through dark field TEM and aberration corrected HAADF imaging

Physical chemistry chemical physics : PCCP, 2017-04, Vol.19 (15), p.9806-9810

2017

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GaAs Nanowire pn-Junctions Produced by Low-Cost and High-Throughput Aerotaxy

Nano letters, 2018-02, Vol.18 (2), p.1088-1092

2018

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Differences between GaAs/GaInP and GaAs/AlInP interfaces grown by movpe revealed by depth profiling and angle-resolved X-ray photoelectron spectroscopies

Applied surface science, 2016-01, Vol.360, p.477-484

2016

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Application of photoreflectance to advanced multilayer structures for photovoltaics

Materials science & engineering. B, Solid-state materials for advanced technology, 2013-05, Vol.178 (9), p.599-608

2013

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Analysis of the surface state of epi-ready Ge wafers

Applied surface science, 2012-08, Vol.258 (20), p.8166-8170

2012

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Quantitative Determination of Luminescent Coupling in Multijunction Solar Cells from Spectral Photovoltage Measurements

Physical review applied, 2016-07, Vol.6 (1), Article 014001

2016

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The effect of Sb-surfactant on GaInP CuPt B type ordering: assessment through dark field TEM and aberration corrected HAADF imaging

Physical chemistry chemical physics : PCCP, 2017-04, Vol.19 (15), p.9806-9810

2017

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Open-atmosphere structural depth profiling of multilayer samples of photovoltaic interest using laser-induced plasma spectrometry

2012 38th IEEE Photovoltaic Specialists Conference, 2012, p.000432-000436

2012

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In situ study of Ge(100) surfaces with tertiarybutylphosphine supply in vapor phase epitaxy ambient

Journal of crystal growth, 2013-05, Vol.370, p.173-176

2013

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Si(100) versus Ge(100): Watching the interface formation for the growth of III-V-based solar cells on abundant substrates

2011 37th IEEE Photovoltaic Specialists Conference, 2011, p.002538-002542

2011

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Development of the Lattice Matched GaInP/GaInAs/Ge Triple Junction Solar Cell with an Efficiency Over 40

12th Spanish Conference on Electron Devices, CDE 2018,Salamanca, Spain,2018-11-14 - 2018-11-16, 2018, p.1-4

2018

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XPS as characterization tool for PV: From the substrate to complete III-V multijunction solar cells

2011 37th IEEE Photovoltaic Specialists Conference, 2011, p.001711-001715

2011

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XPS as characterization tool for PV: From the substrate to complete III-V multijunction solar cells

2011 37th IEEE Photovoltaic Specialists Conference, 2011, p.000229-000233

2011

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On the use of Sb to improve the performance of GaInP subcells of multijunction solar cells

2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC), 2015, p.1-4

2015

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Roadmap towards efficiencies over 40% at ultra-high concentrations (> 1000 suns)

2011 37th IEEE Photovoltaic Specialists Conference, 2011, p.000775-000778

2011

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III-V multijunction solar cells for ultra-high concentration photovoltaics

2009 34th IEEE Photovoltaic Specialists Conference (PVSC), 2009, p.001571-001575

2009

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The effect of Sb-surfactant on GaInP CuPtB type ordering: assessment through dark field TEM and aberration corrected HAADF imagingElectronic supplementary information (ESI) available. See DOI: 10.1039/c7cp01125c

2017-04

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Limiting factors on the semiconductor structure of III-V multijunction solar cells for ultra-high concentration (1000-5000 suns): Limiting factors of multijunction solar cells for ultra-high concentration

Progress in photovoltaics, 2016-10, Vol.24 (10), p.1332-1345

2016

Volltextzugriff (PDF)

GaInP/GaInAs/Ge triple junction solar cells for ultra high concentration

2009 Spanish Conference on Electron Devices, 2009, p.383-386

2009

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Limiting factors on the semiconductor structure of III-V multijunction solar cells for ultra-high concentration (1000-5000 suns)

Refractive indexes and extinction coefficients of n- and p-type doped GaInP, AlInP and AlGaInP for multijunction solar cells

Combined photo- and electroreflectance of multijunction solar cells enabled by subcell electric coupling

10 MeV proton irradiation effects on GaInP/GaAs/Ge concentrator solar cells and their component subcells

Reflectance anisotropy spectroscopy assessment of the MOVPE nucleation of GaInP on germanium (1 0 0)

Analysis of perimeter recombination in the subcells of GaInP/GaAs/Ge triple-junction solar cells

The effect of Sb-surfactant on GaInP CuPtB type ordering: assessment through dark field TEM and aberration corrected HAADF imaging

GaAs Nanowire pn-Junctions Produced by Low-Cost and High-Throughput Aerotaxy

Differences between GaAs/GaInP and GaAs/AlInP interfaces grown by movpe revealed by depth profiling and angle-resolved X-ray photoelectron spectroscopies

Application of photoreflectance to advanced multilayer structures for photovoltaics

Analysis of the surface state of epi-ready Ge wafers

Quantitative Determination of Luminescent Coupling in Multijunction Solar Cells from Spectral Photovoltage Measurements

The effect of Sb-surfactant on GaInP CuPt B type ordering: assessment through dark field TEM and aberration corrected HAADF imaging

Open-atmosphere structural depth profiling of multilayer samples of photovoltaic interest using laser-induced plasma spectrometry

In situ study of Ge(100) surfaces with tertiarybutylphosphine supply in vapor phase epitaxy ambient

Si(100) versus Ge(100): Watching the interface formation for the growth of III-V-based solar cells on abundant substrates

Development of the Lattice Matched GaInP/GaInAs/Ge Triple Junction Solar Cell with an Efficiency Over 40

XPS as characterization tool for PV: From the substrate to complete III-V multijunction solar cells

XPS as characterization tool for PV: From the substrate to complete III-V multijunction solar cells

On the use of Sb to improve the performance of GaInP subcells of multijunction solar cells

Roadmap towards efficiencies over 40% at ultra-high concentrations (> 1000 suns)

III-V multijunction solar cells for ultra-high concentration photovoltaics

The effect of Sb-surfactant on GaInP CuPtB type ordering: assessment through dark field TEM and aberration corrected HAADF imagingElectronic supplementary information (ESI) available. See DOI: 10.1039/c7cp01125c

Limiting factors on the semiconductor structure of III-V multijunction solar cells for ultra-high concentration (1000-5000 suns): Limiting factors of multijunction solar cells for ultra-high concentration

GaInP/GaInAs/Ge triple junction solar cells for ultra high concentration

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