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Properties of carbon-doped GaN

Applied physics letters, 2001-02, Vol.78 (6), p.757-759

2001

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Role of buried cracks in mitigating strain in crack free GaN grown on Si (111) employing AlN interlayer schemes

Journal of crystal growth, 2011-05, Vol.323 (1), p.413-417

2011

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Ultraviolet photoenhanced wet etching of GaN in K2S2O8 solution

Journal of applied physics, 2001-04, Vol.89 (7), p.4142-4149

2001

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Semi-insulating C-doped GaN and high-mobility AlGaN/GaN heterostructures grown by ammonia molecular beam epitaxy

Applied physics letters, 1999-08, Vol.75 (7), p.953-955

1999

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Selectively grown AlGaN/GaN HEMTs on Si(1 1 1) substrates for integration with silicon microelectronics

Journal of crystal growth, 2009-03, Vol.311 (7), p.2087-2090

2009

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Specific cleavage of model recombination and repair intermediates by the yeast Rad1-Rad10 DNA endonuclease

Science (American Association for the Advancement of Science), 1994-09, Vol.265 (5181), p.2082-2085

1994

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GaN HEMT and MOS monolithic integration on silicon substrates

Physica status solidi. C, 2011-07, Vol.8 (7-8), p.2210-2212

2011

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Si (111) substrates as highly effective pseudomasks for selective growth of GaN material and devices by ammonia-molecular-beam epitaxy

Applied physics letters, 2006-04, Vol.88 (17)

2006

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Mechanisms of ammonia—MBE growth of GaN on SiC for transport devices

Journal of crystal growth, 2009-03, Vol.311 (7), p.2091-2095

2009

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Sampling depth of total electron and fluorescence measurements in Si L- and K-edge absorption spectroscopy

Applied surface science, 1996-08, Vol.99 (4), p.303-312

1996

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Electrical Characterization and Surface Morphology of Optimized Ti∕Al∕Ti∕Au Ohmic Contacts for AlGaN∕GaN HEMTs

Journal of the Electrochemical Society, 2006-01, Vol.153 (8), p.G746

2006

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AlGaN/GaN field effect transistors with C-doped GaN buffer layer as an electrical isolation template grown by molecular beam epitaxy

Solid-state electronics, 2005-05, Vol.49 (5), p.802-807

2005

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In Situ Characterization of Anodic Silicon Oxide Films by AC Impedance Measurements

Journal of the Electrochemical Society, 1995-05, Vol.142 (5), p.1705-1712

1995

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GaN nanostructures and HFET structures selectively grown on silicon substrates by ammonia-MBE

Journal of crystal growth, 2007-04, Vol.301, p.442-446

2007

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Growth kinetics and electronic properties of unintentionally doped semi-insulating GaN on SiC and high-resistivity GaN on sapphire grown by ammonia molecular-beam epitaxy

Journal of applied physics, 2010-05, Vol.107 (10)

2010

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Energy relaxation by hot 2D electrons in AlGaN/GaN heterostructures: the influence of strong impurity and defect scattering

Semiconductor science and technology, 2006-12, Vol.21 (12), p.1580-1583

2006

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Specificity of MAP Kinase Signaling in Yeast Differentiation Involves Transient versus Sustained MAPK Activation

Molecular cell, 2001-09, Vol.8 (3), p.683-691

2001

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A Docking Site in MKK4 Mediates High Affinity Binding to JNK MAPKs and Competes with Similar Docking Sites in JNK Substrates

The Journal of biological chemistry, 2003-08, Vol.278 (35), p.32662-32672

2003

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A Conserved Docking Site in MEKs Mediates High-affinity Binding to MAP Kinases and Cooperates with a Scaffold Protein to Enhance Signal Transmission

The Journal of biological chemistry, 2001-03, Vol.276 (13), p.10374-10386

2001

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Monolithic integration of AlGaN/GaN HFET with MOS on silicon 〈111〉 substrates

Electronics letters, 2010, Vol.46 (3), p.240-242

2010

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Yeast DNA repair and recombination proteins Rad1 and Rad10 constitute a single-stranded-DNA endonuclease

Nature (London), 1993-04, Vol.362 (6423), p.860-862

1993

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Self-heating and the temperature dependence of the dc characteristics of GaN heterostructure field effect transistors

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2006-05, Vol.24 (3), p.624-628

2006

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High-performance GaN/InGaN heterostructure FETs on Mg-doped GaN current blocking layers

Journal of crystal growth, 2004-12, Vol.272 (1), p.300-304

2004

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Effect of template morphology on the efficiency of InGaN ∕ GaN quantum wells and light-emitting diodes grown by molecular-beam epitaxy

Applied physics letters, 2005-03, Vol.86 (12), p.121110-121110-3

2005

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A simple wet etch for GaN

Journal of electronic materials, 1999-10, Vol.28 (10), p.L24-L26

1999

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Properties of carbon-doped GaN

Role of buried cracks in mitigating strain in crack free GaN grown on Si (111) employing AlN interlayer schemes

Ultraviolet photoenhanced wet etching of GaN in K2S2O8 solution

Semi-insulating C-doped GaN and high-mobility AlGaN/GaN heterostructures grown by ammonia molecular beam epitaxy

Selectively grown AlGaN/GaN HEMTs on Si(1 1 1) substrates for integration with silicon microelectronics

Specific cleavage of model recombination and repair intermediates by the yeast Rad1-Rad10 DNA endonuclease

GaN HEMT and MOS monolithic integration on silicon substrates

Si (111) substrates as highly effective pseudomasks for selective growth of GaN material and devices by ammonia-molecular-beam epitaxy

Mechanisms of ammonia—MBE growth of GaN on SiC for transport devices

Sampling depth of total electron and fluorescence measurements in Si L- and K-edge absorption spectroscopy

Electrical Characterization and Surface Morphology of Optimized Ti∕Al∕Ti∕Au Ohmic Contacts for AlGaN∕GaN HEMTs

AlGaN/GaN field effect transistors with C-doped GaN buffer layer as an electrical isolation template grown by molecular beam epitaxy

In Situ Characterization of Anodic Silicon Oxide Films by AC Impedance Measurements

GaN nanostructures and HFET structures selectively grown on silicon substrates by ammonia-MBE

Growth kinetics and electronic properties of unintentionally doped semi-insulating GaN on SiC and high-resistivity GaN on sapphire grown by ammonia molecular-beam epitaxy

Energy relaxation by hot 2D electrons in AlGaN/GaN heterostructures: the influence of strong impurity and defect scattering

Specificity of MAP Kinase Signaling in Yeast Differentiation Involves Transient versus Sustained MAPK Activation

A Docking Site in MKK4 Mediates High Affinity Binding to JNK MAPKs and Competes with Similar Docking Sites in JNK Substrates

A Conserved Docking Site in MEKs Mediates High-affinity Binding to MAP Kinases and Cooperates with a Scaffold Protein to Enhance Signal Transmission

Monolithic integration of AlGaN/GaN HFET with MOS on silicon 〈111〉 substrates

Yeast DNA repair and recombination proteins Rad1 and Rad10 constitute a single-stranded-DNA endonuclease

Self-heating and the temperature dependence of the dc characteristics of GaN heterostructure field effect transistors

High-performance GaN/InGaN heterostructure FETs on Mg-doped GaN current blocking layers

Effect of template morphology on the efficiency of InGaN ∕ GaN quantum wells and light-emitting diodes grown by molecular-beam epitaxy

A simple wet etch for GaN

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