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Tantalum pentoxide (Ta 2O 5) thin films for advanced dielectric applications

Materials science & engineering. R, Reports : a review journal, 1998-05, Vol.22 (6), p.269-322

1998

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Glutamate Receptors on Dopamine Neurons Control the Persistence of Cocaine Seeking

Neuron (Cambridge, Mass.), 2008-08, Vol.59 (3), p.497-508

2008

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L’addiction: lorsque l’emballement des mécanismes d’apprentissage conduit à la perte du libre arbitre

PSN, 2009-02, Vol.7 (1), p.35-42

2009

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Fabrication and characterization of Si-MOSFET's with PECVD amorphous Ta2O5 gate insulator

IEEE electron device letters, 1997-09, Vol.18 (9), p.447-449

1997

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Towards a model linking tunnel oxide degradation to programming window closure in EEPROM cells

Journal of non-crystalline solids, 2003-07, Vol.322 (1), p.240-245

2003

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Thermodynamical computation and physicochemical characterization of thin films deposited by electric-discharge-assisted chemical vapor deposition

Applied surface science, 2002-06, Vol.193 (1), p.26-35

2002

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Effect of some technological parameters on Fowler–Nordheim injection through tunnel oxides for non-volatile memories

Journal of non-crystalline solids, 2001-02, Vol.280 (1), p.202-210

2001

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Effect of nitridation on Fowler-Nordheim tunneling coefficients in SiO2 MOS capacitors with WSi2-polysilicon gate

Journal of materials science. Materials in electronics, 2001-06, Vol.12 (4-6), p.333-338

2001

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Use of carbon-free Ta2O5 thin-films as a gate insulator

Microelectronic engineering, 1997-06, Vol.36 (1-4), p.61-64

1997

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Dynamic stressing of thin tunnel oxides: a way to emulate a single EEPROM cell programming function

Journal of non-crystalline solids, 1999-04, Vol.245 (1), p.85-91

1999

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Characterization of Si-SiO2 interface states : comparison between different charge pumping and capacitance techniques

Journal of applied physics, 1993-09, Vol.74 (6), p.3932-3935

1993

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Theoretical and experimental study of the conduction mechanism in Al/Ta2O5/SiO2/Si and Al/Ta2O5/Si3N4/Si structures

Journal of non-crystalline solids, 1999-04, Vol.245 (1-3), p.73-78

1999

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Bioweathering of nontronite colloids in hybrid silica gel: implications for iron mobilization

Journal of applied microbiology, 2014-02, Vol.116 (2), p.325-334

2014

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Thermodynamic approach to the redistribution of boron and fluorine implanted at the interface of an SiO2/Si system

Surface and interface analysis, 2000-08, Vol.30 (1), p.387-390

2000

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Ionic implantation at low energy: application to the shallow junction accomplishment and surface functionalization

Synthetic metals, 1997-11, Vol.90 (3), p.217-221

1997

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The effect of rapid thermal treatments on the formation of shallow junctions by implanting boron and BF2+ ions into (100) silicon through a protecting mask

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1996-05, Vol.112 (1-4), p.196-200

1996

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Electrical properties of oxynitride thin films using noise and charge pumping measurements

Journal of non-crystalline solids, 1999-04, Vol.245 (1), p.54-58

1999

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Investigation of BF2+ implants in silicon through SiO2 films Redistribution of fluorine and boron under rapid thermal annealing

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1996-12, Vol.120 (1-4), p.68-73

1996

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Comparison of trapping–detrapping properties of mobile charge in alkali contaminated metal-oxide-silicon carbide structures

Applied physics letters, 1995-05, Vol.66 (18), p.2340-2342

1995

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Location of individual traps in DRAM cell transistors by charge pumping technique

Microelectronic engineering, 1997-06, Vol.36 (1), p.83-86

1997

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Synaptic localization of the glutamate receptor subunit GluR2 in the rat nucleus tractus solitarii

The European journal of neuroscience, 2003-02, Vol.17 (4), p.892-896

2003

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Nitridation of SiO2 thin films at low ammonia pressures : composition and electrical properties

Thin solid films, 1990-09, Vol.190 (1), p.103-128

1990

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Micronic n-channel MOSFET degradation under strong and short-time hot-carrier stress

Materials science & engineering. B, Solid-state materials for advanced technology, 1992-11, Vol.15 (2), p.164-168

1992

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Use of the charge pumping technique to understand non-uniform n-channel MOSFET degradation

Materials science & engineering. B, Solid-state materials for advanced technology, 1994-01, Vol.23 (2), p.120-122

1994

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New accurate exploitation of thermally stimulated ionic current curves for alkali contaminated metal-oxide-silicon structures

Applied physics letters, 1988-05, Vol.52 (21), p.1791-1793

1988

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Tantalum pentoxide (Ta 2O 5) thin films for advanced dielectric applications

Glutamate Receptors on Dopamine Neurons Control the Persistence of Cocaine Seeking

L’addiction: lorsque l’emballement des mécanismes d’apprentissage conduit à la perte du libre arbitre

Fabrication and characterization of Si-MOSFET's with PECVD amorphous Ta2O5 gate insulator

Towards a model linking tunnel oxide degradation to programming window closure in EEPROM cells

Thermodynamical computation and physicochemical characterization of thin films deposited by electric-discharge-assisted chemical vapor deposition

Effect of some technological parameters on Fowler–Nordheim injection through tunnel oxides for non-volatile memories

Effect of nitridation on Fowler-Nordheim tunneling coefficients in SiO2 MOS capacitors with WSi2-polysilicon gate

Use of carbon-free Ta2O5 thin-films as a gate insulator

Dynamic stressing of thin tunnel oxides: a way to emulate a single EEPROM cell programming function

Characterization of Si-SiO2 interface states : comparison between different charge pumping and capacitance techniques

Theoretical and experimental study of the conduction mechanism in Al/Ta2O5/SiO2/Si and Al/Ta2O5/Si3N4/Si structures

Bioweathering of nontronite colloids in hybrid silica gel: implications for iron mobilization

Thermodynamic approach to the redistribution of boron and fluorine implanted at the interface of an SiO2/Si system

Ionic implantation at low energy: application to the shallow junction accomplishment and surface functionalization

The effect of rapid thermal treatments on the formation of shallow junctions by implanting boron and BF2+ ions into (100) silicon through a protecting mask

Electrical properties of oxynitride thin films using noise and charge pumping measurements

Investigation of BF2+ implants in silicon through SiO2 films Redistribution of fluorine and boron under rapid thermal annealing

Comparison of trapping–detrapping properties of mobile charge in alkali contaminated metal-oxide-silicon carbide structures

Location of individual traps in DRAM cell transistors by charge pumping technique

Synaptic localization of the glutamate receptor subunit GluR2 in the rat nucleus tractus solitarii

Nitridation of SiO2 thin films at low ammonia pressures : composition and electrical properties

Micronic n-channel MOSFET degradation under strong and short-time hot-carrier stress

Use of the charge pumping technique to understand non-uniform n-channel MOSFET degradation

New accurate exploitation of thermally stimulated ionic current curves for alkali contaminated metal-oxide-silicon structures

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