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GaInNAs-based Hellish-vertical cavity semiconductor optical amplifier for 1.3 μm operation

Nanoscale research letters, 2011-01, Vol.6 (1), p.104-104, Article 104

2011

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Nonlinear dynamics of non-equilibrium holes in p-type modulation-doped GaInNAs/GaAs quantum wells

Nanoscale research letters, 2011-03, Vol.6 (1), p.191-191, Article 191

2011

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Acceptor formation in Mg-doped, indium-rich GaxIn1−xN: evidence for p-type conductivity

Nanoscale research letters, 2012-10, Vol.7 (1), p.574-574

2012

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Power Loss Mechanisms in Indium-Rich InGaN Samples

Journal of electronic materials, 2016-02, Vol.45 (2), p.867-871

2016

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Semiconductors for Optoelectronics: Basics and Applications

1st Edition 2021, 2021

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Ga0.35In0.65 N0.02As0.08/GaAs bidirectional light-emitting and light-absorbing heterojunction operating at 1.3 μm

Nanoscale research letters, 2014-01, Vol.9 (1), p.37-37, Article 37

2014

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Carrier trapping and escape times in p-i-n GaInNAs MQW structures

Nanoscale research letters, 2014-01, Vol.9 (1), p.21-21, Article 21

2014

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Experimental investigation and numerical modelling of photocurrent oscillations in lattice matched Ga1−xInxNyAs1−y/GaAs quantum well p-i-n photodiodes

Nanoscale research letters, 2014-02, Vol.9 (1), p.84-84

2014

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Ga^sub 0.35^In^sub 0.65^N^sub 0.02^As^sub 0.08^/GaAs bidirectional light-emitting and light-absorbing heterojunction operating at 1.3 [mu]m

Nanoscale research letters, 2014-01, Vol.9 (1), p.1

2014

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Overshoot mechanism in transient excitation of THz and Gunn oscillations in wide-bandgap semiconductors

Nanoscale research letters, 2012-11, Vol.7 (1), p.647-647, Article 647

2012

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Experimental investigation and numerical modelling of photocurrent oscillations in lattice matched Ga1−xIn x N y As1−y/GaAs quantum well p-i-n photodiodes

Nanoscale research letters, 2014-02, Vol.9 (1), Article 84

2014

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Experimental investigation and numerical modelling of photocurrent oscillations in lattice matched Ga1−x In x N y As1−y /GaAs quantum well p-i-n photodiodes

Nanoscale research letters, 2014-02, Vol.9 (1), p.84-84

2014

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GaInNAs/GaAs MQW pin photodetector for the 1.3 μm optical communications window

Physica status solidi. C, 2013-04, Vol.10 (4), p.577-580

2013

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Experimental investigation and numerical modelling of photocurrent oscillations in lattice matched Ga^sub 1-x^In^sub x^N^sub y^As^sub 1-y^/GaAs quantum well p-i-n photodiodes

Nanoscale research letters, 2014-02, Vol.9 (1), p.1

2014

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Energy Relaxation of Electrons in InGaN Quantum Wells

Metallurgical and materials transactions. A, Physical metallurgy and materials science, 2015-04, Vol.46 (4), p.1565-1569

2015

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GaInNAs/GaAs MQW pin photodetector for the 1.3 [mu]m optical communications window

Physica status solidi. C, 2013-04, Vol.10 (4), p.577

2013

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Gain studies of 1.3-μm dilute nitride HELLISH-VCSOA for optical communications

Nanoscale research letters, 2012-09, Vol.7 (1), p.526-526, Article 526

2012

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Photoconductivity and photoluminescence under bias in GaInNAs/GaAs MQW p-i-n structures

Nanoscale research letters, 2012-09, Vol.7 (1), p.539-539, Article 539

2012

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Physics and Applications of Novel Gain Materials

Physica status solidi. C, 2013-04, Vol.10 (4), p.554-555

2013

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Top-Hat HELLISH-VCSOA for optical amplification and wavelength conversion for 0.85 to 1.3μm operation

Nanoscale research letters, 2012-09, Vol.7 (1), p.525-525, Article 525

2012

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Dilute nitride and GaAs n-i-p-i solar cells

Nanoscale research letters, 2012-11, Vol.7 (1), p.631-631, Article 631

2012

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The role of dislocation-induced scattering in electronic transport in GaxIn1-xN alloys

Nanoscale research letters, 2012-08, Vol.7 (1), p.490-490, Article 490

2012

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Optical gain in 1.3-μm electrically driven dilute nitride VCSOAs

Nanoscale research letters, 2014-01, Vol.9 (1), p.22-22, Article 22

2014

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Optical gain in 1.3-[mu]m electrically driven dilute nitride VCSOAs

Nanoscale research letters, 2014-01, Vol.9 (1), p.1

2014

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Preface: Phys. Status Solidi C 5/2011

Physica status solidi. C, 2011-05, Vol.8 (5), p.1599-1600

2011

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GaInNAs-based Hellish-vertical cavity semiconductor optical amplifier for 1.3 μm operation

Nonlinear dynamics of non-equilibrium holes in p-type modulation-doped GaInNAs/GaAs quantum wells

Acceptor formation in Mg-doped, indium-rich GaxIn1−xN: evidence for p-type conductivity

Power Loss Mechanisms in Indium-Rich InGaN Samples

Semiconductors for Optoelectronics: Basics and Applications

Ga0.35In0.65 N0.02As0.08/GaAs bidirectional light-emitting and light-absorbing heterojunction operating at 1.3 μm

Carrier trapping and escape times in p-i-n GaInNAs MQW structures

Experimental investigation and numerical modelling of photocurrent oscillations in lattice matched Ga1−xInxNyAs1−y/GaAs quantum well p-i-n photodiodes

Ga^sub 0.35^In^sub 0.65^N^sub 0.02^As^sub 0.08^/GaAs bidirectional light-emitting and light-absorbing heterojunction operating at 1.3 [mu]m

Overshoot mechanism in transient excitation of THz and Gunn oscillations in wide-bandgap semiconductors

Experimental investigation and numerical modelling of photocurrent oscillations in lattice matched Ga1−xIn x N y As1−y/GaAs quantum well p-i-n photodiodes

Experimental investigation and numerical modelling of photocurrent oscillations in lattice matched Ga1−x In x N y As1−y /GaAs quantum well p-i-n photodiodes

GaInNAs/GaAs MQW pin photodetector for the 1.3 μm optical communications window

Experimental investigation and numerical modelling of photocurrent oscillations in lattice matched Ga^sub 1-x^In^sub x^N^sub y^As^sub 1-y^/GaAs quantum well p-i-n photodiodes

Energy Relaxation of Electrons in InGaN Quantum Wells

GaInNAs/GaAs MQW pin photodetector for the 1.3 [mu]m optical communications window

Gain studies of 1.3-μm dilute nitride HELLISH-VCSOA for optical communications

Photoconductivity and photoluminescence under bias in GaInNAs/GaAs MQW p-i-n structures

Physics and Applications of Novel Gain Materials

Top-Hat HELLISH-VCSOA for optical amplification and wavelength conversion for 0.85 to 1.3μm operation

Dilute nitride and GaAs n-i-p-i solar cells

The role of dislocation-induced scattering in electronic transport in GaxIn1-xN alloys

Optical gain in 1.3-μm electrically driven dilute nitride VCSOAs

Optical gain in 1.3-[mu]m electrically driven dilute nitride VCSOAs

Preface: Phys. Status Solidi C 5/2011

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