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Semiconductors for Optoelectronics: Basics and Applications

1st Edition 2021, 2021

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Solution of the 1D Schrödinger equation in semiconductor heterostructures using the immersed interface method

Journal of computational physics, 2012-07, Vol.231 (18), p.6173-6180

2012

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The effect of interface-roughness and dislocation scattering on low temperature mobility of 2D electron gas in GaN/AlGaN

Semiconductor science and technology, 2004-03, Vol.19 (3), p.427-432

2004

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Modelling of multijunction solar cells with dilute nitride n-i-p-i junctions

Physica Status Solidi (b), 2011-05, Vol.248 (5), p.1203-1206

2011

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Determination of the carrier density dependent electron effective mass in InN using infrared and Raman spectra

physica status solidi (b), 2012-06, Vol.249 (6), p.1235-1240

2012

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Optical properties of GaNAs and GaInAsN quantum wells

Journal of physics. Condensed matter, 2004-08, Vol.16 (31), p.S3387-S3412

2004

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Comparative study of GaAs and GaInNAs/GaAs multi-quantum well solar cells

Physica Status Solidi (b), 2011-05, Vol.248 (5), p.1191-1194

2011

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Electronic transport in n- and p-type modulation doped GaxIn1−xNyAs1−y/ GaAs quantum wells

Journal of physics. Condensed matter, 2009-04, Vol.21, p.174210

2009

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In rich In1−xGaxN: Composition dependence of longitudinal optical phonon energy

Physica status solidi. B. Basic research, 2010-01, Vol.247 (1), p.189-193

2010

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Hot carrier relaxation process in InGaN epilayers

Physica Status Solidi (b), 2011-05, Vol.248 (5), p.1180-1182

2011

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Hot electron cooling rates via the emission of LO-phonons in InN

Semiconductor science and technology, 2004-08, Vol.19 (8), p.1024-1028

2004

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Simulation of dilute nitride GaInNAs doping superlattice solar cells

IET optoelectronics, 2009-12, Vol.3 (6), p.296-299

2009

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Electrical characterisation of p-doped distributed Bragg reflectors in electrically pumped GaInNAs VCSOAs for 1.3μm operation

Materials science & engineering. B, Solid-state materials for advanced technology, 2012-06, Vol.177 (10), p.739-743

2012

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Temperature and magnetic field effect on oscillations observed in GaInNAs/GaAs multiple quantum wells structures

Materials science & engineering. B, Solid-state materials for advanced technology, 2012-06, Vol.177 (10), p.729-733

2012

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Large zero-field spin splitting in AlGaN/AlN/GaN/AlN heterostructures

Journal of applied physics, 2009-05, Vol.105 (9), p.093701-093701-6

2009

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Fabry-Perot Gunn laser

Applied physics letters, 2005-05, Vol.86 (21), p.211111-211111-2

2005

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Gain characteristic of dilute nitride HELLISH-VCSOA for 1.3 mu m wavelength operation

Physica status solidi. C, 2013-04, Vol.10 (4), p.564-566

2013

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Investigation of low-temperature electrical conduction mechanisms in highly resistive GaN bulk layers extracted with Simple Parallel Conduction Extraction Method

Applied physics. A, Materials science & processing, 2010-03, Vol.98 (3), p.557-563

2010

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The effect of interface roughness scattering on low field mobility of 2D electron gas in GaN/AlGaN heterostructure

Physica. E, Low-dimensional systems & nanostructures, 2004-09, Vol.24 (3-4), p.249-256

2004

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Intense field effects on shallow donor impurities in graded quantum wells

Semiconductor science and technology, 2003-06, Vol.18 (6), p.470-474

2003

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Gain characteristic of dilute nitride HELLISH-VCSOA for 1.3 µm wavelength operation

Physica status solidi. C, 2013-04, Vol.10 (4), p.564-566

2013

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Dilute nitride vertical-cavity gate for all-optical logic at 1.3 µm

IET optoelectronics, 2010-10, Vol.4 (5), p.201-209

2010

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Dilute nitride vertical-cavity gate for all-optical logic at 1.3 mu m

IET optoelectronics, 2010-10, Vol.4 (5), p.201-201

2010

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GaAs n-i-p-i solar cells with ion implanted selective contacts

Physica status solidi. C, 2013-04, Vol.10 (4), p.581-584

2013

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Non-linear carrier dynamics in hot electron vertical cavity surface emitting laser

Physica. B, Condensed matter, 1999-12, Vol.272 (1), p.480-483

Balkan, N

1999

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Semiconductors for Optoelectronics: Basics and Applications

Solution of the 1D Schrödinger equation in semiconductor heterostructures using the immersed interface method

The effect of interface-roughness and dislocation scattering on low temperature mobility of 2D electron gas in GaN/AlGaN

Modelling of multijunction solar cells with dilute nitride n-i-p-i junctions

Determination of the carrier density dependent electron effective mass in InN using infrared and Raman spectra

Optical properties of GaNAs and GaInAsN quantum wells

Comparative study of GaAs and GaInNAs/GaAs multi-quantum well solar cells

Electronic transport in n- and p-type modulation doped GaxIn1−xNyAs1−y/ GaAs quantum wells

In rich In1−xGaxN: Composition dependence of longitudinal optical phonon energy

Hot carrier relaxation process in InGaN epilayers

Hot electron cooling rates via the emission of LO-phonons in InN

Simulation of dilute nitride GaInNAs doping superlattice solar cells

Electrical characterisation of p-doped distributed Bragg reflectors in electrically pumped GaInNAs VCSOAs for 1.3μm operation

Temperature and magnetic field effect on oscillations observed in GaInNAs/GaAs multiple quantum wells structures

Large zero-field spin splitting in AlGaN/AlN/GaN/AlN heterostructures

Fabry-Perot Gunn laser

Gain characteristic of dilute nitride HELLISH-VCSOA for 1.3 mu m wavelength operation

Investigation of low-temperature electrical conduction mechanisms in highly resistive GaN bulk layers extracted with Simple Parallel Conduction Extraction Method

The effect of interface roughness scattering on low field mobility of 2D electron gas in GaN/AlGaN heterostructure

Intense field effects on shallow donor impurities in graded quantum wells

Gain characteristic of dilute nitride HELLISH-VCSOA for 1.3 µm wavelength operation

Dilute nitride vertical-cavity gate for all-optical logic at 1.3 µm

Dilute nitride vertical-cavity gate for all-optical logic at 1.3 mu m

GaAs n-i-p-i solar cells with ion implanted selective contacts

Non-linear carrier dynamics in hot electron vertical cavity surface emitting laser

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