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Growth of GexSi1-x alloys on Si(110) surfaces

Applied physics letters, 1991-08, Vol.59 (8), p.964-966

1991

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Applications of focused ion beams in microelectronics production, design and development

Surface and interface analysis, 1995-02, Vol.23 (2), p.61-68

1995

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Interpretation of dislocation propagation velocities in strained GexSi1-x/Si(100) heterostructures by the diffusive kink pair model

Journal of applied physics, 1991-08, Vol.70 (4), p.2052-2065

1991

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Changes in electrical device characteristics during the in situ formation of dislocations

Applied physics letters, 1993-03, Vol.62 (12), p.1426-1428

1993

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Improvement in heteroepitaxial film quality by a novel substrate patterning geometry

Applied physics letters, 1992-03, Vol.60 (12), p.1468-1470

1992

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Microscopic studies of semiconductor lasers utilizing a combination of transmission electron microscopy, electroluminescence imaging, and focused ion beam sputtering

Applied physics letters, 1993-06, Vol.62 (26), p.3408-3410

1993

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Experimental Measurement of Transmission Electron Microscope Specimen Temperature during Ion Milling

MRS proceedings, 1990, Vol.199, Article 253

1990

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Observation of strong contrast from doping variations in transmission electron microscopy of InP-based semiconductor laser diodes

Applied physics letters, 1995-01, Vol.66 (3), p.341-343

1995

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Crystal growth of cyano-platinum complexes by a new diffusion reaction technique

Journal of crystal growth, 1974-01, Vol.26 (1), p.29-32

1974

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Interdiffusion-assisted dislocation migration in GaAs/Ga1-xAlxAs layers on Si(001)

Philosophical magazine. A, Physics of condensed matter. Defects and mechanical properties, 1991-06, Vol.63 (6), p.1335-1344

1991

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Reduced Amorphization of Ion-Milled Silicon Cross-Section Transmission Electron Microscope Samples by Dynamic Annealing During Milling

MRS proceedings, 1991, Vol.254, Article 249

1991

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Growth of Ge x Si1− x alloys on Si(110) surfaces

Applied physics letters, 1991-08, Vol.59 (8), p.964-966

1991

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Quantitative analysis of strain relaxation in Ge x Si1− x /Si(110) heterostructures and an accurate determination of stacking fault energy in Ge x Si1− x alloys

Applied physics letters, 1992-12, Vol.61 (23), p.2802-2804

1992

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Quantitative analysis of strain relaxation in GexSi1-x/Si(110) heterostructures and an accurate determination of stacking fault energy in GexSi1-xalloys

Applied physics letters, 1992, Vol.61 (23), p.2802-2804

1992

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Interpretation of dislocation propagation velocities in strained Ge x Si1− x /Si(100) heterostructures by the diffusive kink pair model

Journal of applied physics, 1991-08, Vol.70 (4), p.2052-2065

1991

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Strain Relief Mechanisms in The Growth of GexSi1−x/Si(110) Heterostructures

MRS proceedings, 1992, Vol.263

1992

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Strain Relief Mechanisms in The Growth of Ge x Si 1−x /Si(110) Heterostructures

MRS proceedings, 1992, Vol.263, Article 403

1992

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The Roles of Stress, Geometry and Orientation on Misfit Dislocations Kinetics and Energetics in Epitaxial Strained Layers

MRS proceedings, 1991, Vol.239, Article 379

1991

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Techniques of Insulator/Semiconductor Heterostructure Specimen Preparation

MRS proceedings, 1987, Vol.115, Article 63

1987

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Changes in Electronic Device Properties During the Formation of Dislocations

MRS proceedings, 1992, Vol.280, Article 483

1992

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Interdiffusion-assisted dislocation migration in GaAs/Ga 1− x Al x As layers on Si(001)

Philosophical magazine. A, Physics of condensed matter. Defects and mechanical properties, 1991-06, Vol.63 (6), p.1335-1344

1991

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Interdiffusion-assisted dislocation migration in GaAs/Ga1−x AlxAs layers on Si(001)

Philosophical magazine. A, Physics of condensed matter. Defects and mechanical properties, 1991-06, Vol.63 (6), p.1335-1344

1991

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Formal Synthesis of (−)-Kendomycin Featuring a Prins-Cyclization To Construct the Macrocycle

Journal of the American Chemical Society, 2008-10, Vol.130 (39), p.13177-13181

2008

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Heteronucleation onto Si Surfaces

MRS proceedings, 1987, Vol.102, Article 455

1987

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Invention of MK-7845, a SARS-CoV‑2 3CL Protease Inhibitor Employing a Novel Difluorinated Glutamine Mimic

Journal of medicinal chemistry, 2024-03, Vol.67 (5), p.3935-3958

2024

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Growth of GexSi1-x alloys on Si(110) surfaces

Applications of focused ion beams in microelectronics production, design and development

Interpretation of dislocation propagation velocities in strained GexSi1-x/Si(100) heterostructures by the diffusive kink pair model

Changes in electrical device characteristics during the in situ formation of dislocations

Improvement in heteroepitaxial film quality by a novel substrate patterning geometry

Microscopic studies of semiconductor lasers utilizing a combination of transmission electron microscopy, electroluminescence imaging, and focused ion beam sputtering

Experimental Measurement of Transmission Electron Microscope Specimen Temperature during Ion Milling

Observation of strong contrast from doping variations in transmission electron microscopy of InP-based semiconductor laser diodes

Crystal growth of cyano-platinum complexes by a new diffusion reaction technique

Interdiffusion-assisted dislocation migration in GaAs/Ga1-xAlxAs layers on Si(001)

Reduced Amorphization of Ion-Milled Silicon Cross-Section Transmission Electron Microscope Samples by Dynamic Annealing During Milling

Growth of Ge x Si1− x alloys on Si(110) surfaces

Quantitative analysis of strain relaxation in Ge x Si1− x /Si(110) heterostructures and an accurate determination of stacking fault energy in Ge x Si1− x alloys

Quantitative analysis of strain relaxation in GexSi1-x/Si(110) heterostructures and an accurate determination of stacking fault energy in GexSi1-xalloys

Interpretation of dislocation propagation velocities in strained Ge x Si1− x /Si(100) heterostructures by the diffusive kink pair model

Strain Relief Mechanisms in The Growth of GexSi1−x/Si(110) Heterostructures

Strain Relief Mechanisms in The Growth of Ge x Si 1−x /Si(110) Heterostructures

The Roles of Stress, Geometry and Orientation on Misfit Dislocations Kinetics and Energetics in Epitaxial Strained Layers

Techniques of Insulator/Semiconductor Heterostructure Specimen Preparation

Changes in Electronic Device Properties During the Formation of Dislocations

Interdiffusion-assisted dislocation migration in GaAs/Ga 1− x Al x As layers on Si(001)

Interdiffusion-assisted dislocation migration in GaAs/Ga1−x AlxAs layers on Si(001)

Formal Synthesis of (−)-Kendomycin Featuring a Prins-Cyclization To Construct the Macrocycle

Heteronucleation onto Si Surfaces

Invention of MK-7845, a SARS-CoV‑2 3CL Protease Inhibitor Employing a Novel Difluorinated Glutamine Mimic

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