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Characterization technique for inhomogeneous 4H-SiC Schottky contacts: A practical model for high temperature behavior

Journal of applied physics, 2017-08, Vol.122 (8)

2017

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A model to non-uniform Ni Schottky contact on SiC annealed at elevated temperatures

Applied physics letters, 2015-06, Vol.106 (26)

2015

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Facilitating of knowledge transfer in a software development company

IOP conference series. Materials Science and Engineering, 2020-09, Vol.916 (1), p.12121

2020

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Titanium Dioxide−Polymer Core–Shell Particles Dispersions as Electronic Inks for Electrophoretic Displays

Chemistry of materials, 2008-02, Vol.20 (4), p.1292-1298

2008

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Design of Colored Multilayered Electrophoretic Particles for Electronic Inks

ACS applied materials & interfaces, 2011-09, Vol.3 (9), p.3602-3610

2011

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Encapsulation of TiO2 in poly(4-vinyl pyridine)-based cationic microparticles for electrophoretic inks

Polymer (Guilford), 2008-10, Vol.49 (21), p.4529-4533

2008

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Characterization of non-uniform Ni/4H-SiC Schottky diodes for improved responsivity in high-temperature sensing

Materials science in semiconductor processing, 2019-05, Vol.94, p.64-69

2019

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An industrial temperature probe based on SiC diodes

CAS 2010 Proceedings (International Semiconductor Conference), 2010, Vol.2, p.409-412

2010

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Theoretical Study of an Effective Field Plate Termination for SiC Devices Based on High-k Dielectrics

Materials science forum, 2006-10, Vol.527-529, p.1087-1090

2006

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Accurate modeling and parameter extraction for 6H-SiC Schottky barrier diodes (SBDs) with nearly ideal breakdown voltage

IEEE transactions on electron devices, 2001-09, Vol.48 (9), p.2148-2153

2001

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High Temperature Behavior Prediction Techniques for Non-Uniform Ni/SiC Schottky Diodes

Materials science forum, 2018-06, Vol.924, p.967-970

2018

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Barrier stability of Pt/4H-SiC Schottky diodes used for high temperature sensing

2016 European Conference on Silicon Carbide & Related Materials (ECSCRM), 2017-05, Vol.897, p.1-1

2017

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The electron irradiation effects on silicon gate dioxide used for power MOS devices

Microelectronics and reliability, 2001-07, Vol.41 (7), p.1015-1018

2001

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An Investigation of SiC Schottky Contact Barrier Inhomogeneity for Temperature Sensing Applications

Materials Science Forum, 2016-05, Vol.858, p.577-581

2016

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Two Packaging Solutions for High Temperature SiC Diode Sensors

Materials science forum, 2014-02, Vol.778-780, p.1063-1066

2014

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Comparison between Schottky Diodes with Oxide Ramp Termination on Silicon Carbide and Diamond

Materials science forum, 2007-01, Vol.556-557, p.865-868

2007

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Silicon carbide Schottky and ohmic contact process dependence

Diamond and related materials, 2002-03, Vol.11 (3-6), p.1258-1262

2002

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Study on thermal sensitivity of highly inhomogeneous Ni/4H-SiC Schottky diode over a wide temperature range

2017 International Semiconductor Conference (CAS), 2017, p.255-256

2017

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Low-doped 6H-SiC n-type epilayers grown by sublimation epitaxy

Materials science & engineering. B, Solid-state materials for advanced technology, 2000-08, Vol.77 (1), p.50-54

2000

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Experimental Validation of a Simple Analytical Model for the Electrical Behaviour of Nanoscale MOSFETs

2007 International Semiconductor Conference, 2007, Vol.2, p.551-554

2007

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A Fully Electrically Isolated Package for High Temperature SiC Sensors

Materials science forum, 2012, Vol.717-720, p.925-928

2012

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An Effective High-Voltage Termination for SiC Planar pn Junctions for Use in High-Voltage Devices and UV Detectors

Materials science forum, 2002-04, Vol.389-393, p.1301-1304

2002

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Barrier non-uniformity of annealed Ni/4H-SiC Schottky contacts with temperature

2015 11th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME), 2015, p.157-160

2015

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Gated diode in breakdown voltage collapse regime - A test vehicle for oxide characterization

2011 IEEE ICMTS International Conference on Microelectronic Test Structures, 2011, p.136-139

2011

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Improved Understanding and Optimization of SiC Nearly Solar Blind UV Photodiodes

Materials science forum, 2003-09, Vol.433-436, p.965-968

2003

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Characterization technique for inhomogeneous 4H-SiC Schottky contacts: A practical model for high temperature behavior

A model to non-uniform Ni Schottky contact on SiC annealed at elevated temperatures

Facilitating of knowledge transfer in a software development company

Titanium Dioxide−Polymer Core–Shell Particles Dispersions as Electronic Inks for Electrophoretic Displays

Design of Colored Multilayered Electrophoretic Particles for Electronic Inks

Encapsulation of TiO2 in poly(4-vinyl pyridine)-based cationic microparticles for electrophoretic inks

Characterization of non-uniform Ni/4H-SiC Schottky diodes for improved responsivity in high-temperature sensing

An industrial temperature probe based on SiC diodes

Theoretical Study of an Effective Field Plate Termination for SiC Devices Based on High-k Dielectrics

Accurate modeling and parameter extraction for 6H-SiC Schottky barrier diodes (SBDs) with nearly ideal breakdown voltage

High Temperature Behavior Prediction Techniques for Non-Uniform Ni/SiC Schottky Diodes

Barrier stability of Pt/4H-SiC Schottky diodes used for high temperature sensing

The electron irradiation effects on silicon gate dioxide used for power MOS devices

An Investigation of SiC Schottky Contact Barrier Inhomogeneity for Temperature Sensing Applications

Two Packaging Solutions for High Temperature SiC Diode Sensors

Comparison between Schottky Diodes with Oxide Ramp Termination on Silicon Carbide and Diamond

Silicon carbide Schottky and ohmic contact process dependence

Study on thermal sensitivity of highly inhomogeneous Ni/4H-SiC Schottky diode over a wide temperature range

Low-doped 6H-SiC n-type epilayers grown by sublimation epitaxy

Experimental Validation of a Simple Analytical Model for the Electrical Behaviour of Nanoscale MOSFETs

A Fully Electrically Isolated Package for High Temperature SiC Sensors

An Effective High-Voltage Termination for SiC Planar pn Junctions for Use in High-Voltage Devices and UV Detectors

Barrier non-uniformity of annealed Ni/4H-SiC Schottky contacts with temperature

Gated diode in breakdown voltage collapse regime - A test vehicle for oxide characterization

Improved Understanding and Optimization of SiC Nearly Solar Blind UV Photodiodes

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