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Ohmic contacts to Al‐rich AlGaN heterostructures

Physica status solidi. A, Applications and materials science, 2017-08, Vol.214 (8), p.1600842-n/a

2017

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Influence of MgO and Sc2O3 passivation on AlGaN/GaN high-electron-mobility transistors

Applied physics letters, 2002-03, Vol.80 (9), p.1661-1663

2002

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Self-heating study of an AlGaN∕GaN-based heterostructure field-effect transistor using ultraviolet micro-Raman scattering

Applied physics letters, 2005-04, Vol.86 (17)

2005

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Radiation Response of AlGaN-Channel HEMTs

IEEE transactions on nuclear science, 2019-01, Vol.66 (1), p.344-351

2019

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Inductively coupled plasma-induced etch damage of GaN p-n junctions

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 2000-07, Vol.18 (4), p.1139-1143

2000

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Stress relaxation and thermal evolution of film properties in amorphous carbon

Journal of electronic materials, 1997-09, Vol.26 (9), p.1021-1029

1997

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dc and rf performance of proton-irradiated AlGaN/GaN high electron mobility transistors

Applied physics letters, 2001-10, Vol.79 (14), p.2196-2198

2001

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GaN electronics for high power, high temperature applications

Materials science & engineering. B, Solid-state materials for advanced technology, 2001-05, Vol.82 (1), p.227-231

2001

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Ion-implanted GaN junction field effect transistor

Applied physics letters, 1996-04, Vol.68 (16), p.2273-2275

1996

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Growth and fabrication of GaN/AlGaN heterojunction bipolar transistor

Applied physics letters, 1999-05, Vol.74 (18), p.2702-2704

1999

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Thermal stability of WSix and W Schottky contacts on n-GaN

Applied physics letters, 2003-05, Vol.82 (19), p.3263-3265

2003

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InGaP/InGaAsN/GaAs NpN double-heterojunction bipolar transistor

Applied physics letters, 2000-04, Vol.76 (16), p.2262-2264

2000

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Electronic properties of the AlGaN/GaN heterostructure and two-dimensional electron gas observed by electroreflectance

Journal of applied physics, 2004-02, Vol.95 (4), p.1888-1894

2004

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InGaAsN/AlGaAs P-n-p heterojunction bipolar transistor

Applied physics letters, 2000-05, Vol.76 (19), p.2788-2790

2000

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Performance of AlGaN/GaN high electron mobility transistors at nanoscale gate lengths

Journal of nanoscience and nanotechnology, 2002-06, Vol.2 (3-4), p.325-332

2002

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Epitaxially-grown GaN junction field effect transistors

IEEE transactions on electron devices, 2000-03, Vol.47 (3), p.507-511

2000

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Sputtered AlN encapsulant for high-temperature annealing of GaN

Applied physics letters, 1996-07, Vol.69 (4), p.538-540

1996

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Inductively coupled high-density plasma-induced etch damage of GaN MESFETs

Solid-state electronics, 2001, Vol.45 (1), p.13-17

2001

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Effect of gate length on DC performance of AlGaN/GaN HEMTs grown by MBE

Solid-state electronics, 2001-12, Vol.45 (12), p.1979-1985

2001

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A survey of ohmic contacts to III-V compound semiconductors

Thin solid films, 1997-10, Vol.308, p.599-606

1997

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Comparison of AlGaN/GaN high electron mobility transistors grown on AlN/SiC templates or sapphire

Solid-state electronics, 2002-04, Vol.46 (4), p.513-523

2002

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Device characteristics of the GaAs/InGaAsN/GaAs p-n-p double heterojunction bipolar transistor

IEEE electron device letters, 2001-03, Vol.22 (3), p.113-115

2001

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Effect of Mg ionization efficiency on performance of Npn AlGaN/GaN heterojunction bipolar transistors

Applied physics letters, 2000-05, Vol.76 (21), p.3115-3117

2000

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Review—Ultra-Wide-Bandgap AlGaN Power Electronic Devices

ECS journal of solid state science and technology, 2017-01, Vol.6 (2), p.Q3061-Q3066

2017

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Orientation and dielectric overlayer effects in InGaP/GaAs heterojunction bipolar transistors

Solid-state electronics, 2002-06, Vol.46 (6), p.797-801

2002

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Ohmic contacts to Al‐rich AlGaN heterostructures

Influence of MgO and Sc2O3 passivation on AlGaN/GaN high-electron-mobility transistors

Self-heating study of an AlGaN∕GaN-based heterostructure field-effect transistor using ultraviolet micro-Raman scattering

Radiation Response of AlGaN-Channel HEMTs

Inductively coupled plasma-induced etch damage of GaN p-n junctions

Stress relaxation and thermal evolution of film properties in amorphous carbon

dc and rf performance of proton-irradiated AlGaN/GaN high electron mobility transistors

GaN electronics for high power, high temperature applications

Ion-implanted GaN junction field effect transistor

Growth and fabrication of GaN/AlGaN heterojunction bipolar transistor

Thermal stability of WSix and W Schottky contacts on n-GaN

InGaP/InGaAsN/GaAs NpN double-heterojunction bipolar transistor

Electronic properties of the AlGaN/GaN heterostructure and two-dimensional electron gas observed by electroreflectance

InGaAsN/AlGaAs P-n-p heterojunction bipolar transistor

Performance of AlGaN/GaN high electron mobility transistors at nanoscale gate lengths

Epitaxially-grown GaN junction field effect transistors

Sputtered AlN encapsulant for high-temperature annealing of GaN

Inductively coupled high-density plasma-induced etch damage of GaN MESFETs

Effect of gate length on DC performance of AlGaN/GaN HEMTs grown by MBE

A survey of ohmic contacts to III-V compound semiconductors

Comparison of AlGaN/GaN high electron mobility transistors grown on AlN/SiC templates or sapphire

Device characteristics of the GaAs/InGaAsN/GaAs p-n-p double heterojunction bipolar transistor

Effect of Mg ionization efficiency on performance of Npn AlGaN/GaN heterojunction bipolar transistors

Review—Ultra-Wide-Bandgap AlGaN Power Electronic Devices

Orientation and dielectric overlayer effects in InGaP/GaAs heterojunction bipolar transistors

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