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74 nm wavelength tuning range of an InGaAsP/InP vertical grating assisted codirectional coupler laser with rear sampled grating reflector
IEEE photonics technology letters, 1993-07, Vol.5 (7), p.735-737
1993
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30 GHz direct modulation bandwidth in detuned loaded InGaAsP DBR lasers at 1.55 [micro sign]m wavelength
Electronics letters, 1997, Vol.33 (6), p.488
1997
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114-nm wavelength tuning range of a vertical grating assisted codirectional coupler laser with a super structure grating distributed bragg reflector
IEEE photonics technology letters, 1995-07, Vol.7 (7), p.697-699
1995
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Complete single mode wavelength coverage over 40 nm with a super structure grating DBR laser
Journal of lightwave technology, 1995-09, Vol.13 (9), p.1892-1898, Article 1892
1995
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Semi-insulating InP:Fe regrowth by the hydride VPE technique around p-InP substrate laser mesas fabricated by reactive ion etching
Journal of electronic materials, 1991, Vol.20 (12), p.1025-1027
1991
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Entirely aluminum free 905-nm wavelength buried heterostructure laser by reactive ion etching and semi-insulating GaInP:Fe regrowth
IEEE transactions on electron devices, 1997-02, Vol.44 (2), p.339-340
1997
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Linewidth dependence on side-mode suppression in three-electrode DFB laser
Electronics letters, 1989-09, Vol.25 (2), p.168-169
1989
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Increased modulation bandwidth up to 20 GHz of a detuned-loaded DBR laser
IEEE photonics technology letters, 1994-02, Vol.6 (2), p.161-163
1994
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Access to 20 evenly distributed wavelengths over 100 nm using only a single current tuning in a four-electrode monolithic semiconductor laser
IEEE photonics technology letters, 1995-11, Vol.7 (11), p.1249-1251, Article 1249
1995
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Wide continuous wavelength tuning of a narrow linewidth DBR laser
IEEE photonics technology letters, 1992-03, Vol.4 (3), p.230-232
1992
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Quasi-continuous tuning range from 1560 to 1520 nm in a GCSR laser, with high power and low tuning currents
Electronics letters, 1996, Vol.32 (25), p.2352
1996
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Loss-compensated optical Y-branch switch in InGaAsP-InP
Journal of lightwave technology, 1990-10, Vol.8 (10), p.1591-1595
1990
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Semi-insulating InP: Fe regrowth by the hydride VPE technique aroundp-InP substrate laser mesas fabricated by reactive ion etching
Journal of electronic materials, 1991-12, Vol.20 (12), p.1025-1027
1991
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30 GHz direct modulation bandwidth in detuned loaded InGaAsP DBR lasers at 1.55 mu m wavelength
Electronics letters, 1997-01, Vol.33 (6), p.488-489
1997
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Wavelength coverage over 67 nm with a GCSR laser: tuning characteristics and switching speed
Conference Digest. 15th IEEE International Semiconductor Laser Conference, 1996, p.125-126
1996
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Complete single mode wavelength coverage over 40 nm with a super structure grating DBR laser
Proceedings of IEEE 14th International Semiconductor Laser Conference, 1994, p.32-33
1994
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Two-section InGaAsP DBR-lasers at 1.55 /spl mu/m wavelength with 31 GHz direct modulation bandwidth
Conference Proceedings. 1997 International Conference on Indium Phosphide and Related Materials, 1997, p.665-668
1997
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Tunable semiconductor lasers and their applications
Technical Digest. CLEO/Pacific Rim'95. The Pacific Rim Conference on Lasers and Electro-Optics, 1995, p.212
1995
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Semi-insulating InP:Fe regrowth by hydride VPE around P-InP substrate laser mesas fabricated by reactive ion etching
[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials, 1991, p.504-506
1991
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