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Impact of interface state trap density on the performance characteristics of different III–V MOSFET architectures

Microelectronics and reliability, 2010-03, Vol.50 (3), p.360-364

2010

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Towards the global modeling of InGaAs-based pseudomorphic HEMTs

Journal of computational electronics, 2008-09, Vol.7 (3), p.187-191

2008

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Global modeling of carrier-field dynamics in semiconductors using EMC–FDTD

Journal of computational electronics, 2009-06, Vol.8 (2), p.153-171

2009

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Hot electron effects in ultra-short gate length InAs/InAlAs HEMTs

Physica status solidi. C, 2008-01, Vol.5 (1), p.135-138

2008

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Full-band cellular Monte Carlo simulations of terahertz high electron mobility transistors

Journal of physics. Condensed matter, 2008-09, Vol.20 (38), p.384201-384201 (9)

2008

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Effect of interface state trap density on the performance of scaled surface channel In0.3Ga0.7 As MOSFETs

Journal of physics. Conference series, 2009-11, Vol.193 (1), p.012122

2009

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Global Modeling of high frequency devices

Journal of computational electronics, 2006-12, Vol.5 (4), p.415-418

2006

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The Upper Limit of the Cutoff Frequency in Ultrashort Gate-Length InGaAs/InAlAs HEMTs: A New Definition of Effective Gate Length

IEEE electron device letters, 2008-04, Vol.29 (4), p.306-308

2008

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Simulation of Ultrasubmicrometer-Gate [Formula Omitted] Pseudomorphic HEMTs Using a Full-Band Monte Carlo Simulator

IEEE transactions on electron devices, 2007-09, Vol.54 (9), p.2327-2338

2007

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Full-band cellular Monte Carlo simulations of terahertz high electron mobility transistors : Heterostructure Terahertz Devices

Journal of physics. Condensed matter, 2008, Vol.20 (38)

2008

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Coupling Maxwell's Equations to Full Band Particle-Based Simulators

Journal of computational electronics, 2003-12, Vol.2 (2-4), p.183-190

2003

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Simulating Pseudomorphic HEMTs: Optimizing Performance to Achieve Multi-terahertz Operating Frequencies

2008 Device Research Conference, 2008, p.267-268

2008

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The upper limits of cut-off frequency in ultra-short gate length InP-based p-HEMTs

2008 20th International Conference on Indium Phosphide and Related Materials, 2008, p.1-4

2008

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MONTE CARLO SIMULATIONS OF In 0.75 Ga 0.25 As MOSFETs AT 0.5 V SUPPLY VOLTAGE FOR HIGH-PERFORMANCE CMOS

International journal of high speed electronics, 2009-03, Vol.19 (1), p.93-100

2009

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Effect of interface state trap density on the performance of scaled surface channel In 0.3 Ga 0.7 As MOSFETs

Journal of physics. Conference series, 2009-11, Vol.193, p.12122

2009

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Global modeling of carrier-field dynamics in semiconductors using EMC―FDTD: Special Issue on the State of Computational Electronics in the U.S

Journal of computational electronics, 2009, Vol.8 (2), p.153-171

2009

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Monte Carlo simulations of inverse channel versus implant free In0.3Ga0.7As MOSFETs

2012 15th International Workshop on Computational Electronics, 2012, p.1-4

2012

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Mixed-level simulation of opto-electronic devices

2016 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD), 2016, p.101-102

2016

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III-V MOSFETs for Digital Applications with Silicon Co-Integration

2008 International Conference on Advanced Semiconductor Devices and Microsystems, 2008, p.39-46

2008

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Physical Modeling of Microwave Transistors Using a Full-Band/Full-Wave Simulation Approach

2009 13th International Workshop on Computational Electronics, 2009, p.1-4

2009

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Effect of interface state trap density on the characteristics of n-type, enhancement-mode, implant-free In0.3Ga0.7As MOSFETs

Microelectronic engineering, 2009-07, Vol.86 (7-9), p.1564-1567

2009

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Full-band CMC simulations of terahertz HEMTs

Journal of physics. Conference series, 2008-03, Vol.109 (1), p.012001, Article 012001

2008

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Effect of interface state trap density on the characteristics of @@in@-type, enhancement-mode, implant- free In@@d0.3@Ga@@d0.7@As MOSFETs

Microelectronic engineering, 2009-09, Vol.86 (7-9), p.1564-1567

2009

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Effect of interface state trap density on the characteristics of n-type, enhancement-mode, implant-free In 0.3Ga 0.7As MOSFETs

Microelectronic engineering, 2009, Vol.86 (7), p.1564-1567

2009

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Impact of interface state trap density on the performance characteristics of different III–V MOSFET architectures

Towards the global modeling of InGaAs-based pseudomorphic HEMTs

Global modeling of carrier-field dynamics in semiconductors using EMC–FDTD

Hot electron effects in ultra-short gate length InAs/InAlAs HEMTs

Full-band cellular Monte Carlo simulations of terahertz high electron mobility transistors

Effect of interface state trap density on the performance of scaled surface channel In0.3Ga0.7 As MOSFETs

Global Modeling of high frequency devices

The Upper Limit of the Cutoff Frequency in Ultrashort Gate-Length InGaAs/InAlAs HEMTs: A New Definition of Effective Gate Length

Simulation of Ultrasubmicrometer-Gate [Formula Omitted] Pseudomorphic HEMTs Using a Full-Band Monte Carlo Simulator

Full-band cellular Monte Carlo simulations of terahertz high electron mobility transistors : Heterostructure Terahertz Devices

Coupling Maxwell's Equations to Full Band Particle-Based Simulators

Simulating Pseudomorphic HEMTs: Optimizing Performance to Achieve Multi-terahertz Operating Frequencies

The upper limits of cut-off frequency in ultra-short gate length InP-based p-HEMTs

MONTE CARLO SIMULATIONS OF In 0.75 Ga 0.25 As MOSFETs AT 0.5 V SUPPLY VOLTAGE FOR HIGH-PERFORMANCE CMOS

Effect of interface state trap density on the performance of scaled surface channel In 0.3 Ga 0.7 As MOSFETs

Global modeling of carrier-field dynamics in semiconductors using EMC―FDTD: Special Issue on the State of Computational Electronics in the U.S

Monte Carlo simulations of inverse channel versus implant free In0.3Ga0.7As MOSFETs

Mixed-level simulation of opto-electronic devices

III-V MOSFETs for Digital Applications with Silicon Co-Integration

Physical Modeling of Microwave Transistors Using a Full-Band/Full-Wave Simulation Approach

Effect of interface state trap density on the characteristics of n-type, enhancement-mode, implant-free In0.3Ga0.7As MOSFETs

Full-band CMC simulations of terahertz HEMTs

Effect of interface state trap density on the characteristics of @@in@-type, enhancement-mode, implant- free In@@d0.3@Ga@@d0.7@As MOSFETs

Effect of interface state trap density on the characteristics of n-type, enhancement-mode, implant-free In 0.3Ga 0.7As MOSFETs

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