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Resistive switching in hafnium dioxide layers: Local phenomenon at grain boundaries

Applied physics letters, 2012-11, Vol.101 (19)

2012

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Measures in the first year of therapy predict the response to interferon β in MS

Multiple sclerosis, 2009-07, Vol.15 (7), p.848-853

2009

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Note: Electrical resolution during conductive atomic force microscopy measurements under different environmental conditions and contact forces

Review of scientific instruments, 2010-10, Vol.81 (10), p.106110-106110-3

2010

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Current-limiting and ultrafast system for the characterization of resistive random access memories

Review of scientific instruments, 2016-06, Vol.87 (6)

2016

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Efficient methodology to extract interface traps parameters for TCAD simulations

Microelectronic engineering, 2017-06, Vol.178, p.66-70

2017

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Biexponential Analysis of Diffusion-Tensor Imaging of the Brain in Patients with Cirrhosis before and after Liver Transplantation

American journal of neuroradiology : AJNR, 2011-09, Vol.32 (8), p.1510-1517

2011

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UHV CAFM characterization of high-k dielectrics: Effect of the technique resolution on the pre- and post-breakdown electrical measurements

Microelectronics and reliability, 2010-09, Vol.50 (9), p.1312-1315

2010

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A single-center, randomized, double-blind, placebo-controlled study of interferon beta-1b on primary progressive and transitional multiple sclerosis

Multiple sclerosis, 2009-10, Vol.15 (10), p.1195-1205

2009

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Serum neurofilament light chain levels predict long-term disability progression in patients with progressive multiple sclerosis

Journal of neurology, neurosurgery and psychiatry, 2022-07, Vol.93 (7), p.732-740

2022

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A comprehensive study of channel hot-carrier degradation in short channel MOSFETs with high-k dielectrics

Microelectronic engineering, 2013-03, Vol.103, p.144-149

2013

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Negative Bias Temperature Instabilities induced in devices with millisecond anneal for ultra-shallow junctions

Solid-state electronics, 2014-11, Vol.101, p.131-136

2014

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Influence of the interface trap location on the performance and variability of ultra-scaled MOSFETs

Microelectronics and reliability, 2013-09, Vol.53 (9-11), p.1243-1246

2013

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Cervical Cord Atrophy and Long-Term Disease Progression in Patients with Primary-Progressive Multiple Sclerosis

American journal of neuroradiology : AJNR, 2018-02, Vol.39 (2), p.399-404

2018

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Electrical characterization of stressed and broken down SiO2 films at a nanometer scale using a conductive atomic force microscope

Journal of applied physics, 2002-02, Vol.91 (4), p.2071-2079

2002

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Estimation of the density of veins from susceptibility-weighted imaging by using Mamdani fuzzy-type rule-based system. Investigating the neurovascular coupling in migraine

NeuroImage clinical, 2023-01, Vol.39, p.103489-103489, Article 103489

2023

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Channel hot-carrier degradation in pMOS and nMOS short channel transistors with high-k dielectric stack

Microelectronic engineering, 2010, Vol.87 (1), p.47-50

2010

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Soft breakdown conduction in ultrathin (3-5 nm) gate dielectrics

IEEE transactions on electron devices, 2000-01, Vol.47 (1), p.82-89

2000

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Recovery of the MOSFET and Circuit Functionality After the Dielectric Breakdown of Ultrathin High- k Gate Stacks

IEEE electron device letters, 2010-06, Vol.31 (6), p.543-545

2010

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Channel-Hot-Carrier Degradation and Bias Temperature Instabilities in CMOS Inverters

IEEE transactions on electron devices, 2009-09, Vol.56 (9), p.2155-2159

2009

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Lesion filling effect in regional brain volume estimations: a study in multiple sclerosis patients with low lesion load

Neuroradiology, 2016-05, Vol.58 (5), p.467-474

2016

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Charge trapping and degradation of HfO2/SiO2 MOS gate stacks observed with enhanced CAFM

IEEE electron device letters, 2006-03, Vol.27 (3), p.157-159

2006

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Reversible dielectric breakdown in ultrathin Hf based high- k stacks under current-limited stresses

Microelectronics and reliability, 2009-09, Vol.49 (9), p.1024-1028

2009

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Nanoscale electrical characterization of Si-nc based memory metal-oxide-semiconductor devices

Journal of applied physics, 2007-03, Vol.101 (6)

2007

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Resistive switching like-behavior in MOSFETs with ultra-thin HfSiON dielectric gate stack: pMOS and nMOS comparison and reliability implications

Microelectronics and reliability, 2013-09, Vol.53 (9-11), p.1247-1251

2013

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Nanoscale observations of resistive switching high and low conductivity states on TiN/HfO2/Pt structures

Microelectronics and reliability, 2012-09, Vol.52 (9-10), p.2110-2114

2012

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Resistive switching in hafnium dioxide layers: Local phenomenon at grain boundaries

Measures in the first year of therapy predict the response to interferon β in MS

Note: Electrical resolution during conductive atomic force microscopy measurements under different environmental conditions and contact forces

Current-limiting and ultrafast system for the characterization of resistive random access memories

Efficient methodology to extract interface traps parameters for TCAD simulations

Biexponential Analysis of Diffusion-Tensor Imaging of the Brain in Patients with Cirrhosis before and after Liver Transplantation

UHV CAFM characterization of high-k dielectrics: Effect of the technique resolution on the pre- and post-breakdown electrical measurements

A single-center, randomized, double-blind, placebo-controlled study of interferon beta-1b on primary progressive and transitional multiple sclerosis

Serum neurofilament light chain levels predict long-term disability progression in patients with progressive multiple sclerosis

A comprehensive study of channel hot-carrier degradation in short channel MOSFETs with high-k dielectrics

Negative Bias Temperature Instabilities induced in devices with millisecond anneal for ultra-shallow junctions

Influence of the interface trap location on the performance and variability of ultra-scaled MOSFETs

Cervical Cord Atrophy and Long-Term Disease Progression in Patients with Primary-Progressive Multiple Sclerosis

Electrical characterization of stressed and broken down SiO2 films at a nanometer scale using a conductive atomic force microscope

Estimation of the density of veins from susceptibility-weighted imaging by using Mamdani fuzzy-type rule-based system. Investigating the neurovascular coupling in migraine

Channel hot-carrier degradation in pMOS and nMOS short channel transistors with high-k dielectric stack

Soft breakdown conduction in ultrathin (3-5 nm) gate dielectrics

Recovery of the MOSFET and Circuit Functionality After the Dielectric Breakdown of Ultrathin High- k Gate Stacks

Channel-Hot-Carrier Degradation and Bias Temperature Instabilities in CMOS Inverters

Lesion filling effect in regional brain volume estimations: a study in multiple sclerosis patients with low lesion load

Charge trapping and degradation of HfO2/SiO2 MOS gate stacks observed with enhanced CAFM

Reversible dielectric breakdown in ultrathin Hf based high- k stacks under current-limited stresses

Nanoscale electrical characterization of Si-nc based memory metal-oxide-semiconductor devices

Resistive switching like-behavior in MOSFETs with ultra-thin HfSiON dielectric gate stack: pMOS and nMOS comparison and reliability implications

Nanoscale observations of resistive switching high and low conductivity states on TiN/HfO2/Pt structures

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