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The measurement of threading dislocation densities in semiconductor crystals by X-ray diffraction

Journal of crystal growth, 1994, Vol.135 (1), p.71-77

Ayers, J.E.

1994

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Comparison of Continuously- and Step-Graded ZnS y Se1−y /GaAs (001) Metamorphic Buffer Layers

Journal of electronic materials, 2014-08, Vol.43 (8), p.3047-3055

2014

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Design of Dislocation-Compensated ZnS y Se1−y /GaAs (001) Heterostructures

Journal of electronic materials, 2013-11, Vol.42 (11), p.3034-3040

2013

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Crystallographic tilting of heteroepitaxial layers

Journal of crystal growth, 1991-09, Vol.113 (3), p.430-440

1991

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Comparison of Continuously- and Step-Graded ZnSySe1−y/GaAs (001) Metamorphic Buffer Layers

Journal of electronic materials, 2014-05, Vol.43 (8), p.3047-3055

2014

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Photoassisted MOVPE grown (n)ZnSe/(p +)GaAs heterojunction solar cells

Solid-state electronics, 2003-04, Vol.47 (4), p.595-599

2003

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Design of Dislocation-Compensated ZnSySe1−y/GaAs (001) Heterostructures

Journal of electronic materials, 2013, Vol.42 (11), p.3034-3040

2013

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Compliant Substrates for Heteroepitaxial Semiconductor Devices: Theory, Experiment, and Current Directions

Journal of electronic materials, 2008-10, Vol.37 (10), p.1511-1523

Ayers, J.E.

2008

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Dynamical X-ray Diffraction from ZnS y Se1−y /GaAs (001) Multilayers and Superlattices with Dislocations

Journal of electronic materials, 2012-10, Vol.41 (10), p.2846-2851

2012

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Chirped Superlattices as Adjustable Strain Platforms for Metamorphic Semiconductor Devices

ECS transactions, 2017-01, Vol.80 (10), p.981-989

2017

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Fabrication and Simulation of InGaAs Field-Effect Transistors with II–VI Tunneling Insulators

Journal of electronic materials, 2015-09, Vol.44 (9), p.3064-3068

2015

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Effect of Epilayer Tilt on Dynamical X-ray Diffraction from Uniform Heterostructures with Asymmetric Dislocation Densities

Journal of electronic materials, 2013-11, Vol.42 (11), p.3066-3070

2013

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Plastic Flow and Dislocation Compensation in ZnSySe1−y/GaAs (001) Heterostructures

Journal of electronic materials, 2012-11, Vol.41 (11), p.2993-3000

2012

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Dynamical X-ray Diffraction from ZnSySe1−y/GaAs (001) Multilayers and Superlattices with Dislocations

Journal of electronic materials, 2012-10, Vol.41 (10), p.2846-2851

2012

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Indium Gallium Arsenide Quantum Dot Gate Field-Effect Transistor Using II–VI Tunnel Insulators Showing Three-State Behavior

Journal of electronic materials, 2012-10, Vol.41 (10), p.2810-2815

2012

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Post-growth thermal annealing of GaAs on Si(001) grown by organometallic vapor phase epitaxy

Journal of crystal growth, 1992-11, Vol.125 (1), p.329-335

1992

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Overshoot Graded Layers for Mismatched Heteroepitaxial Devices

Journal of electronic materials, 2008-08, Vol.37 (8), p.1035-1043

2008

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Plastic Flow and Dislocation Compensation in ZnS y Se1−y /GaAs (001) Heterostructures

Journal of electronic materials, 2012-11, Vol.41 (11), p.2993-3000

2012

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A quantitative model for the interpretation of RAV (rocking curve azimuthal variation) results from heteroepitaxial semiconductor layers

Journal of crystal growth, 2010-03, Vol.312 (7), p.886-891

2010

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Factors influencing low-temperature photo-assisted OMVPE growth of ZnSe

Journal of crystal growth, 1996, Vol.165 (1), p.25-30

1996

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Electrical properties of oxidized polycrystalline silicon as a gate insulator for n-type 4H-SiC MOS devices

Solid-state electronics, 2005-12, Vol.49 (12), p.2002-2005

2005

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The photoassisted MOVPE growth of ZnMgSSe

Journal of crystal growth, 2001-04, Vol.224 (3), p.212-217

2001

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Comparison of X-ray diffraction methods for determination of the critical layer thickness for dislocation multiplication

Journal of electronic materials, 1999-05, Vol.28 (5), p.553-558

1999

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Structural properties of ZnS ySe 1 − y/ZnSe/GaAs(0 0 1) heterostructures grown by photoassisted metalorganic vapor phase epitaxy

Journal of crystal growth, 1997, Vol.174 (1), p.726-732

1997

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Structural properties of ZnSySe1 − y/ZnSe/GaAs(0 0 1) heterostructures grown by photoassisted metalorganic vapor phase epitaxy

Journal of crystal growth, 1997-04, Vol.174 (1-4), p.726-732

1997

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The measurement of threading dislocation densities in semiconductor crystals by X-ray diffraction

Comparison of Continuously- and Step-Graded ZnS y Se1−y /GaAs (001) Metamorphic Buffer Layers

Design of Dislocation-Compensated ZnS y Se1−y /GaAs (001) Heterostructures

Crystallographic tilting of heteroepitaxial layers

Comparison of Continuously- and Step-Graded ZnSySe1−y/GaAs (001) Metamorphic Buffer Layers

Photoassisted MOVPE grown (n)ZnSe/(p +)GaAs heterojunction solar cells

Design of Dislocation-Compensated ZnSySe1−y/GaAs (001) Heterostructures

Compliant Substrates for Heteroepitaxial Semiconductor Devices: Theory, Experiment, and Current Directions

Dynamical X-ray Diffraction from ZnS y Se1−y /GaAs (001) Multilayers and Superlattices with Dislocations

Chirped Superlattices as Adjustable Strain Platforms for Metamorphic Semiconductor Devices

Fabrication and Simulation of InGaAs Field-Effect Transistors with II–VI Tunneling Insulators

Effect of Epilayer Tilt on Dynamical X-ray Diffraction from Uniform Heterostructures with Asymmetric Dislocation Densities

Plastic Flow and Dislocation Compensation in ZnSySe1−y/GaAs (001) Heterostructures

Dynamical X-ray Diffraction from ZnSySe1−y/GaAs (001) Multilayers and Superlattices with Dislocations

Indium Gallium Arsenide Quantum Dot Gate Field-Effect Transistor Using II–VI Tunnel Insulators Showing Three-State Behavior

Post-growth thermal annealing of GaAs on Si(001) grown by organometallic vapor phase epitaxy

Overshoot Graded Layers for Mismatched Heteroepitaxial Devices

Plastic Flow and Dislocation Compensation in ZnS y Se1−y /GaAs (001) Heterostructures

A quantitative model for the interpretation of RAV (rocking curve azimuthal variation) results from heteroepitaxial semiconductor layers

Factors influencing low-temperature photo-assisted OMVPE growth of ZnSe

Electrical properties of oxidized polycrystalline silicon as a gate insulator for n-type 4H-SiC MOS devices

The photoassisted MOVPE growth of ZnMgSSe

Comparison of X-ray diffraction methods for determination of the critical layer thickness for dislocation multiplication

Structural properties of ZnS ySe 1 − y/ZnSe/GaAs(0 0 1) heterostructures grown by photoassisted metalorganic vapor phase epitaxy

Structural properties of ZnSySe1 − y/ZnSe/GaAs(0 0 1) heterostructures grown by photoassisted metalorganic vapor phase epitaxy

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