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Study of the Parameters of a Two-Dimensional Electron Gas in InGaN/GaN Quantum Wells by Terahertz Plasmon Resonance

Semiconductors (Woodbury, N.Y.), 2022-02, Vol.56 (2), p.50-57

2022

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Photoreversible Current in InGaN/GaN-Based LED Heterostructures with Different Numbers of QWs

Semiconductors (Woodbury, N.Y.), 2020-03, Vol.54 (3), p.362-365

2020

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Investigation into the Internal Electric-Field Strength in the Active Region of InGaN/GaN-Based LED Structures with Various Numbers of Quantum Wells by Electrotransmission Spectroscopy

Semiconductors (Woodbury, N.Y.), 2020-04, Vol.54 (4), p.495-500

2020

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Terahertz Time-Domain Spectroscopy (THz-TDS) of LED Heterostructures with Three and Five InxGa1 –xN/GaN Quantum Wells

Journal of experimental and theoretical physics, 2023-05, Vol.136 (5), p.593-604

2023

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Influence of Dimensional Quantization Effects on the Effective Mass of Major Charge Carriers in LED Heterostructures with InGaN/GaN Multiple Quantum Wells

Moscow University physics bulletin, 2024, Vol.79 (4), p.469-476

2024

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Study of a Nonequilibrium Auger-Transition Using Emission Auger Spectroscopy

Journal of applied spectroscopy, 2021-11, Vol.88 (5), p.911-917

2021

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Studying the Nonequilibrium Auger Transition Using the Emission Auger Spectroscopy Data

Inorganic materials : applied research, 2022-08, Vol.13 (4), p.1083-1088

2022

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Piezoelectric Relaxation of Two-Dimensional Electron Gas in Heterostructures with InGaN/GaN Quantum Wells

Russian physics journal, 2021-09, Vol.64 (5), p.770-782

2021

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Investigation into the Distribution of Built-in Electric Fields in LED Heterostructures with Multiple GaN/InGaN Quantum Wells by Electroreflectance Spectroscopy

Semiconductors (Woodbury, N.Y.), 2019-04, Vol.53 (4), p.477-483

2019

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Raman scattering in InP doped by Be+-ion implantation

Semiconductors (Woodbury, N.Y.), 2017-02, Vol.51 (2), p.168-172

2017

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Photoreflectance Spectroscopy Study of LT-GaAs Layers Grown on Si and GaAs Substrates

Semiconductors (Woodbury, N.Y.), 2018-07, Vol.52 (7), p.849-852

2018

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Electroreflectance spectra from multiple InGaN/GaN quantum wells in the nonuniform electric field of a p–n junction

Semiconductors (Woodbury, N.Y.), 2017-02, Vol.51 (2), p.189-192

2017

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Effect of Deuteration on Raman Scattering in Single Crystals of Potassium Alum

Journal of Raman spectroscopy, 2024-11

2024

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Terahertz Time-Domain Spectroscopy

Journal of experimental and theoretical physics, 2023-05, Vol.136 (5), p.593

2023

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Terahertz Time-Domain Spectroscopy of LED Heterostructures with Three and Five In.sub.xGa.sub.1 -.sub.xN/GaN Quantum Wells

Journal of experimental and theoretical physics, 2023-05, Vol.136 (5), p.593

2023

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Interband optical transitions in GaAs modulation-doped quantum wells: photoreflectance experiment and self-consistent calculations

Semiconductor science and technology, 2006-04, Vol.21 (4), p.462-466

2006

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Influence of Dimensional Quantization Effects on the Effective Mass of Major Charge Carriers in LED Heterostructures with In$_{\boldsymbol{x}}$$Ga$_{\boldsymbol{1-x}}$$N/GaN Multiple Quantum Wells

Moscow University physics bulletin, 2024-08, Vol.79 (4), p.469-476

2024

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Terahertz Time-Domain Spectroscopy (THz-TDS) of LED Heterostructures with Three and Five InxGa1 – xN/GaN Quantum Wells

Z̆urnal ėksperimentalʹnoj i teoretic̆eskoj fiziki, 2023-05, Vol.163 (5), p.669-681

2023

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The Relaxation Time, Mobility, and Effective Mass of 2DEG in InGaN/GaN Quantum Wells According to Terahertz Plasmon Resonance Data

Moscow University physics bulletin, 2021-09, Vol.76 (5), p.371-379

2021

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Computerized Setup for Double-Monochromator Photoreflectance Spectroscopy

Technical physics, 2005, Vol.50 (10), p.1316

Avakyants, L. P.

2005

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Inelastic Light Scattering Near the Ferroelectric Phase-Transition Point in Bismuth Vanadate Crystals

Journal of Russian laser research, 2004-11, Vol.25 (6), p.535-580

2004

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Interference effects in the electroreflectance and electroluminescence spectra of InGaN/AlGaN/GaN light-emitting-diode heterostructures

Semiconductors (Woodbury, N.Y.), 2010-08, Vol.44 (8), p.1090-1095

2010

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Photoreflectance spectroscopy of delta-doped GaAs layers

Inorganic materials, 2011-05, Vol.47 (5), p.455-458

2011

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Electroreflectance spectra of InGaN/AlGaN/GaN quantum-well heterostructures

Semiconductors (Woodbury, N.Y.), 2007-09, Vol.41 (9), p.1060-1066

2007

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Photoreflectance study of plasma-etched semi-insulating GaAs substrates treated

Bulletin of the Russian Academy of Sciences. Physics, 2008-07, Vol.72 (7), p.941-943

2008

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Study of the Parameters of a Two-Dimensional Electron Gas in InGaN/GaN Quantum Wells by Terahertz Plasmon Resonance

Photoreversible Current in InGaN/GaN-Based LED Heterostructures with Different Numbers of QWs

Investigation into the Internal Electric-Field Strength in the Active Region of InGaN/GaN-Based LED Structures with Various Numbers of Quantum Wells by Electrotransmission Spectroscopy

Terahertz Time-Domain Spectroscopy (THz-TDS) of LED Heterostructures with Three and Five InxGa1 –xN/GaN Quantum Wells

Influence of Dimensional Quantization Effects on the Effective Mass of Major Charge Carriers in LED Heterostructures with InGaN/GaN Multiple Quantum Wells

Study of a Nonequilibrium Auger-Transition Using Emission Auger Spectroscopy

Studying the Nonequilibrium Auger Transition Using the Emission Auger Spectroscopy Data

Piezoelectric Relaxation of Two-Dimensional Electron Gas in Heterostructures with InGaN/GaN Quantum Wells

Investigation into the Distribution of Built-in Electric Fields in LED Heterostructures with Multiple GaN/InGaN Quantum Wells by Electroreflectance Spectroscopy

Raman scattering in InP doped by Be+-ion implantation

Photoreflectance Spectroscopy Study of LT-GaAs Layers Grown on Si and GaAs Substrates

Electroreflectance spectra from multiple InGaN/GaN quantum wells in the nonuniform electric field of a p–n junction

Effect of Deuteration on Raman Scattering in Single Crystals of Potassium Alum

Terahertz Time-Domain Spectroscopy

Terahertz Time-Domain Spectroscopy of LED Heterostructures with Three and Five In.sub.xGa.sub.1 -.sub.xN/GaN Quantum Wells

Interband optical transitions in GaAs modulation-doped quantum wells: photoreflectance experiment and self-consistent calculations

Influence of Dimensional Quantization Effects on the Effective Mass of Major Charge Carriers in LED Heterostructures with In$_{\boldsymbol{x}}$$Ga$_{\boldsymbol{1-x}}$$N/GaN Multiple Quantum Wells

Terahertz Time-Domain Spectroscopy (THz-TDS) of LED Heterostructures with Three and Five InxGa1 – xN/GaN Quantum Wells

The Relaxation Time, Mobility, and Effective Mass of 2DEG in InGaN/GaN Quantum Wells According to Terahertz Plasmon Resonance Data

Computerized Setup for Double-Monochromator Photoreflectance Spectroscopy

Inelastic Light Scattering Near the Ferroelectric Phase-Transition Point in Bismuth Vanadate Crystals

Interference effects in the electroreflectance and electroluminescence spectra of InGaN/AlGaN/GaN light-emitting-diode heterostructures

Photoreflectance spectroscopy of delta-doped GaAs layers

Electroreflectance spectra of InGaN/AlGaN/GaN quantum-well heterostructures

Photoreflectance study of plasma-etched semi-insulating GaAs substrates treated

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