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Altitude and Underground Real-Time SER Characterization of CMOS 65 nm SRAM

IEEE transactions on nuclear science, 2009-08, Vol.56 (4), p.2258-2266

2009

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Influence of band structure on electron ballistic transport in silicon nanowire MOSFET’s: An atomistic study

Solid-state electronics, 2006-04, Vol.50 (4), p.716-721

2006

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3D Quantum Numerical Simulation of Single-Event Transients in Multiple-Gate Nanowire MOSFETs

IEEE transactions on nuclear science, 2007-08, Vol.54 (4), p.994-1001

2007

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Two-dimensional modeling of quantum ballistic transport in ultimate double-gate SOI devices

Solid-state electronics, 2003-07, Vol.47 (7), p.1219-1225

2003

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Investigation of 30 nm Gate-All-Around MOSFET Sensitivity to Heavy Ions: A 3-D Simulation Study

IEEE transactions on nuclear science, 2006-08, Vol.53 (4), p.1950-1958

2006

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Electronics reliability assessment of future power fusion machines: Neutron interaction analysis in bulk silicon

Microelectronics and reliability, 2021-11, Vol.126, p.114223, Article 114223

2021

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Basic single-event mechanisms in Ge-based nanoelectronics subjected to terrestrial atmospheric neutrons

Microelectronics and reliability, 2021-11, Vol.126, p.114256, Article 114256

2021

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A water tank muon spectrometer for the characterization of low energy atmospheric muons

Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 2019-07, Vol.933, p.12-17

2019

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Impact of total ionizing dose on the alpha-soft error rate in FDSOI 28 nm SRAMs

Microelectronics and reliability, 2023-11, Vol.150, p.115181, Article 115181

2023

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Simulation analysis of the bipolar amplification induced by heavy-ion irradiation in double-gate MOSFETs

IEEE transactions on nuclear science, 2005-12, Vol.52 (6), p.2137-2143

2005

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Capacitance non-linearity study in Al2O3 MIM capacitors using an ionic polarization model

Microelectronic engineering, 2006-11, Vol.83 (11-12), p.2422-2426

2006

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Electrical characteristics of Ge/GeOx(N)/HfO2 gate stacks

Journal of non-crystalline solids, 2005-07, Vol.351 (21-23), p.1902-1905

2005

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Characterization of atmospheric muons at sea level using a cosmic ray telescope

Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 2018-09, Vol.903, p.77-84

2018

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Analysis of 45-nm Multi-Gate Transistors Behavior Under Heavy Ion Irradiation by 3-D Device Simulation

IEEE transactions on nuclear science, 2006-12, Vol.53 (6), p.3265-3270, Article 3265

2006

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Terrestrial neutron-induced single events in GaN

Microelectronics and reliability, 2019-09, Vol.100-101, p.113357, Article 113357

2019

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Impact of high-permittivity dielectrics on speed performances and power consumption in double-gate-based CMOS circuits

Journal of non-crystalline solids, 2007-04, Vol.353 (5), p.639-644

2007

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Modelling and simulation of SEU in bulk Si and Ge SRAM

Microelectronics and reliability, 2019-09, Vol.100-101, p.113390, Article 113390

2019

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Atomic-scale modeling of double-gate MOSFETs using a tight-binding Green’s function formalism

Solid-state electronics, 2004-04, Vol.48 (4), p.567-574

2004

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Single-event-transient effects in Junctionless Double-Gate MOSFETs with Dual-Material Gate investigated by 3D simulation

Microelectronics and reliability, 2017-09, Vol.76-77 (SI), p.719-724

2017

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Real-time soft-error rate measurements: A review

Microelectronics and reliability, 2014-08, Vol.54 (8), p.1455-1476

2014

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A compact model for the ballistic subthreshold current in ultra-thin independent double-gate MOSFETs

Molecular simulation, 2009-05, Vol.35 (6), p.491-497

2009

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Behavioral modeling of SRIM tables for numerical simulation

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2014-03, Vol.322, p.2-6

2014

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Radiation sensitivity of junctionless double-gate 6T SRAM cells investigated by 3-D numerical simulation

Microelectronics and reliability, 2014-09, Vol.54 (9-10), p.2284-2288

2014

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Multi-Poisson process analysis of real-time soft-error rate measurements in bulk 65nm and 40nm SRAMs

Microelectronics and reliability, 2017-09, Vol.76-77, p.53-57

2017

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3D simulation of single-event-transient effects in symmetrical dual-material double-gate MOSFETs

Microelectronics and reliability, 2015-08, Vol.55 (9-10), p.1522-1526

2015

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Altitude and Underground Real-Time SER Characterization of CMOS 65 nm SRAM

Influence of band structure on electron ballistic transport in silicon nanowire MOSFET’s: An atomistic study

3D Quantum Numerical Simulation of Single-Event Transients in Multiple-Gate Nanowire MOSFETs

Two-dimensional modeling of quantum ballistic transport in ultimate double-gate SOI devices

Investigation of 30 nm Gate-All-Around MOSFET Sensitivity to Heavy Ions: A 3-D Simulation Study

Electronics reliability assessment of future power fusion machines: Neutron interaction analysis in bulk silicon

Basic single-event mechanisms in Ge-based nanoelectronics subjected to terrestrial atmospheric neutrons

A water tank muon spectrometer for the characterization of low energy atmospheric muons

Impact of total ionizing dose on the alpha-soft error rate in FDSOI 28 nm SRAMs

Simulation analysis of the bipolar amplification induced by heavy-ion irradiation in double-gate MOSFETs

Capacitance non-linearity study in Al2O3 MIM capacitors using an ionic polarization model

Electrical characteristics of Ge/GeOx(N)/HfO2 gate stacks

Characterization of atmospheric muons at sea level using a cosmic ray telescope

Analysis of 45-nm Multi-Gate Transistors Behavior Under Heavy Ion Irradiation by 3-D Device Simulation

Terrestrial neutron-induced single events in GaN

Impact of high-permittivity dielectrics on speed performances and power consumption in double-gate-based CMOS circuits

Modelling and simulation of SEU in bulk Si and Ge SRAM

Atomic-scale modeling of double-gate MOSFETs using a tight-binding Green’s function formalism

Single-event-transient effects in Junctionless Double-Gate MOSFETs with Dual-Material Gate investigated by 3D simulation

Real-time soft-error rate measurements: A review

A compact model for the ballistic subthreshold current in ultra-thin independent double-gate MOSFETs

Behavioral modeling of SRIM tables for numerical simulation

Radiation sensitivity of junctionless double-gate 6T SRAM cells investigated by 3-D numerical simulation

Multi-Poisson process analysis of real-time soft-error rate measurements in bulk 65nm and 40nm SRAMs

3D simulation of single-event-transient effects in symmetrical dual-material double-gate MOSFETs

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