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Modeling and Simulation of Single-Event Effects in Digital Devices and ICs

IEEE transactions on nuclear science, 2008-08, Vol.55 (4), p.1854-1878

2008

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Impact of Complex Logic Cell Layout on the Single-Event Transient Sensitivity

IEEE transactions on nuclear science, 2019-07, Vol.66 (7), p.1465-1472

2019

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Exploiting Transistor Folding Layout as RHBD Technique Against Single-Event Transients

IEEE transactions on nuclear science, 2020-07, Vol.67 (7), p.1581-1589

2020

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Design exploration of majority voter architectures based on the signal probability for TMR strategy optimization in space applications

Microelectronics and reliability, 2020-11, Vol.114, p.113877, Article 113877

2020

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Comparing analytical and Monte-Carlo-based simulation methods for logic gates SET sensitivity evaluation

Microelectronics and reliability, 2020-11, Vol.114, p.113871, Article 113871

2020

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Real-time soft-error rate measurements: A review

Microelectronics and reliability, 2014-08, Vol.54 (8), p.1455-1476

2014

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Reliability-driven pin assignment optimization to improve in-orbit soft-error rate

Microelectronics and reliability, 2020-11, Vol.114, p.113885, Article 113885

2020

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Analysis of the charge sharing effect in the SET sensitivity of bulk 45 nm standard cell layouts under heavy ions

Microelectronics and reliability, 2018-09, Vol.88-90, p.920-924

2018

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Radiation hardening efficiency of gate sizing and transistor stacking based on standard cells

Microelectronics and reliability, 2019-09, Vol.100-101, p.113457, Article 113457

2019

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Single-Event Latchup sensitivity: Temperature effects and the role of the collected charge

Microelectronics and reliability, 2021-04, Vol.119, p.114087, Article 114087

2021

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Multiscale, Multiphysics Modeling and Simulation of Single-Event Effects in Digital Electronics: From Particles to Systems

IEEE transactions on nuclear science, 2024-01, Vol.71 (1), p.31-66

2024

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Soft-Error Rate Induced by Thermal and Low Energy Neutrons in 40 nm SRAMs

IEEE transactions on nuclear science, 2012-12, Vol.59 (6), p.2658-2665

2012

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New insights into diffusion–collection modeling of radiation-induced charge in semiconductor devices

Journal of applied physics, 2023-11, Vol.134 (17)

2023

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Geant4 Analysis of n-Si Nuclear Reactions From Different Sources of Neutrons and Its Implication on Soft-Error Rate

IEEE transactions on nuclear science, 2012-08, Vol.59 (4), p.714-722

2012

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Application of the TIARA Radiation Transport Tool to Single Event Effects Simulation

IEEE transactions on nuclear science, 2014-06, Vol.61 (3), p.1498-1500

2014

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Simulation Analysis of Bipolar Amplification in Independent-Gate FinFET and Multi-Channel NWFET Submitted to Heavy-Ion Irradiation

IEEE transactions on nuclear science, 2012-12, Vol.59 (6), p.3249-3257

2012

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3-D Simulation Analysis of Bipolar Amplification in Planar Double-Gate and FinFET With Independent Gates

IEEE transactions on nuclear science, 2009-08, Vol.56 (4), p.2083-2090

2009

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Heavy Ion Testing and 3-D Simulations of Multiple Cell Upset in 65 nm Standard SRAMs

IEEE transactions on nuclear science, 2008-08, Vol.55 (4), p.2048-2054

2008

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The Plateau de Bure Neutron Monitor: Design, Operation and Monte Carlo Simulation

IEEE transactions on nuclear science, 2012-04, Vol.59 (2), p.303-313

2012

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Modeling of energy bands in ultra-thin layer quantum nanostructures for solar cell applications

Journal of non-crystalline solids, 2011-04, Vol.357 (8), p.1884-1887

2011

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Tantalum pentoxide (Ta 2O 5) thin films for advanced dielectric applications

Materials science & engineering. R, Reports : a review journal, 1998-05, Vol.22 (6), p.269-322

1998

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Simulation analysis of the bipolar amplification in fully-depleted SOI technologies under heavy-ion irradiations

IEEE transactions on nuclear science, 2005-10, Vol.52 (5), p.1474-1479

2005

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Soft-errors induced by terrestrial neutrons and natural alpha-particle emitters in advanced memory circuits at ground level

Microelectronics and reliability, 2010-09, Vol.50 (9), p.1822-1831

2010

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Impact of Ballistic and Quasi-Ballistic Transport on Performances of Double-Gate MOSFET-Based Circuits

IEEE transactions on electron devices, 2008-09, Vol.55 (9), p.2443-2453

2008

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Simulation study of Short-Channel Effects and quantum confinement in double-gate FinFET devices with high-mobility materials

Microelectronic engineering, 2011-04, Vol.88 (4), p.366-369

2011

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Modeling and Simulation of Single-Event Effects in Digital Devices and ICs

Impact of Complex Logic Cell Layout on the Single-Event Transient Sensitivity

Exploiting Transistor Folding Layout as RHBD Technique Against Single-Event Transients

Design exploration of majority voter architectures based on the signal probability for TMR strategy optimization in space applications

Comparing analytical and Monte-Carlo-based simulation methods for logic gates SET sensitivity evaluation

Real-time soft-error rate measurements: A review

Reliability-driven pin assignment optimization to improve in-orbit soft-error rate

Analysis of the charge sharing effect in the SET sensitivity of bulk 45 nm standard cell layouts under heavy ions

Radiation hardening efficiency of gate sizing and transistor stacking based on standard cells

Single-Event Latchup sensitivity: Temperature effects and the role of the collected charge

Multiscale, Multiphysics Modeling and Simulation of Single-Event Effects in Digital Electronics: From Particles to Systems

Soft-Error Rate Induced by Thermal and Low Energy Neutrons in 40 nm SRAMs

New insights into diffusion–collection modeling of radiation-induced charge in semiconductor devices

Geant4 Analysis of n-Si Nuclear Reactions From Different Sources of Neutrons and Its Implication on Soft-Error Rate

Application of the TIARA Radiation Transport Tool to Single Event Effects Simulation

Simulation Analysis of Bipolar Amplification in Independent-Gate FinFET and Multi-Channel NWFET Submitted to Heavy-Ion Irradiation

3-D Simulation Analysis of Bipolar Amplification in Planar Double-Gate and FinFET With Independent Gates

Heavy Ion Testing and 3-D Simulations of Multiple Cell Upset in 65 nm Standard SRAMs

The Plateau de Bure Neutron Monitor: Design, Operation and Monte Carlo Simulation

Modeling of energy bands in ultra-thin layer quantum nanostructures for solar cell applications

Tantalum pentoxide (Ta 2O 5) thin films for advanced dielectric applications

Simulation analysis of the bipolar amplification in fully-depleted SOI technologies under heavy-ion irradiations

Soft-errors induced by terrestrial neutrons and natural alpha-particle emitters in advanced memory circuits at ground level

Impact of Ballistic and Quasi-Ballistic Transport on Performances of Double-Gate MOSFET-Based Circuits

Simulation study of Short-Channel Effects and quantum confinement in double-gate FinFET devices with high-mobility materials

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